JP2023508502A - 半導体用途のための高純度コーディエライト材料 - Google Patents
半導体用途のための高純度コーディエライト材料 Download PDFInfo
- Publication number
- JP2023508502A JP2023508502A JP2022539687A JP2022539687A JP2023508502A JP 2023508502 A JP2023508502 A JP 2023508502A JP 2022539687 A JP2022539687 A JP 2022539687A JP 2022539687 A JP2022539687 A JP 2022539687A JP 2023508502 A JP2023508502 A JP 2023508502A
- Authority
- JP
- Japan
- Prior art keywords
- cordierite
- sintered body
- cordierite sintered
- disclosed
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052878 cordierite Inorganic materials 0.000 title claims abstract description 338
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 title claims abstract description 338
- 239000000463 material Substances 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 title description 18
- 238000000034 method Methods 0.000 claims abstract description 134
- 239000011148 porous material Substances 0.000 claims abstract description 27
- 239000000843 powder Substances 0.000 claims description 307
- 239000000203 mixture Substances 0.000 claims description 162
- 238000012545 processing Methods 0.000 claims description 20
- 238000002441 X-ray diffraction Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 claims description 11
- 229910001753 sapphirine Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 9
- 238000001739 density measurement Methods 0.000 claims description 9
- 239000004113 Sepiolite Substances 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 239000004927 clay Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010459 dolomite Substances 0.000 claims description 8
- 229910000514 dolomite Inorganic materials 0.000 claims description 8
- 229910052839 forsterite Inorganic materials 0.000 claims description 8
- 229910001679 gibbsite Inorganic materials 0.000 claims description 8
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052624 sepiolite Inorganic materials 0.000 claims description 8
- 235000019355 sepiolite Nutrition 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 239000005995 Aluminium silicate Substances 0.000 claims description 7
- 235000012211 aluminium silicate Nutrition 0.000 claims description 7
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000454 talc Substances 0.000 claims description 7
- 229910052623 talc Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000007496 glass forming Methods 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 229910052752 metalloid Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 143
- 238000005245 sintering Methods 0.000 description 122
- 239000002245 particle Substances 0.000 description 76
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 60
- 239000000377 silicon dioxide Substances 0.000 description 57
- 239000000758 substrate Substances 0.000 description 55
- 239000010410 layer Substances 0.000 description 46
- 239000000395 magnesium oxide Substances 0.000 description 42
- 230000008569 process Effects 0.000 description 37
- 238000009826 distribution Methods 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 34
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 33
- 238000010438 heat treatment Methods 0.000 description 33
- 238000000137 annealing Methods 0.000 description 31
- 238000002156 mixing Methods 0.000 description 29
- 235000012239 silicon dioxide Nutrition 0.000 description 28
- 238000001354 calcination Methods 0.000 description 25
- 239000007770 graphite material Substances 0.000 description 25
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 24
- 238000000059 patterning Methods 0.000 description 24
- 238000005259 measurement Methods 0.000 description 23
- 239000000919 ceramic Substances 0.000 description 22
- 239000011888 foil Substances 0.000 description 20
- 238000010304 firing Methods 0.000 description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 18
- 239000011521 glass Substances 0.000 description 18
- 230000003746 surface roughness Effects 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 17
- 239000002019 doping agent Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 16
- 229910002804 graphite Inorganic materials 0.000 description 15
- 239000010439 graphite Substances 0.000 description 15
- 229910052906 cristobalite Inorganic materials 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- 239000002002 slurry Substances 0.000 description 13
- 238000012876 topography Methods 0.000 description 13
- 229910052905 tridymite Inorganic materials 0.000 description 13
- 238000000498 ball milling Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 238000005286 illumination Methods 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 9
- 238000003825 pressing Methods 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 239000011164 primary particle Substances 0.000 description 8
- 239000007858 starting material Substances 0.000 description 8
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 description 7
- 235000013339 cereals Nutrition 0.000 description 6
- 229910021485 fumed silica Inorganic materials 0.000 description 6
- 238000010902 jet-milling Methods 0.000 description 6
- 239000012798 spherical particle Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000001393 microlithography Methods 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011707 mineral Substances 0.000 description 4
- 235000010755 mineral Nutrition 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004293 potassium hydrogen sulphite Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000004439 roughness measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- -1 impurities Chemical compound 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000002390 rotary evaporation Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 239000006125 LAS system Substances 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007780 powder milling Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
- C04B35/18—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay rich in aluminium oxide
- C04B35/195—Alkaline earth aluminosilicates, e.g. cordierite or anorthite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/16—Pore diameter
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3463—Alumino-silicates other than clay, e.g. mullite
- C04B2235/3481—Alkaline earth metal alumino-silicates other than clay, e.g. cordierite, beryl, micas such as margarite, plagioclase feldspars such as anorthite, zeolites such as chabazite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5409—Particle size related information expressed by specific surface values
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5463—Particle size distributions
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/663—Oxidative annealing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/725—Metal content
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/963—Surface properties, e.g. surface roughness
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/963—Surface properties, e.g. surface roughness
- C04B2235/9638—Tolerance; Dimensional accuracy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Catalysts (AREA)
Abstract
Description
a)二酸化ケイ素(SiO2)、酸化マグネシウム(MgO)、及び酸化アルミニウム(Al2O3)を含む粉末を合わせて粉末混合物を形成する工程と、
b)焼成温度に達するまで熱を加え、焼成温度を維持して焼成を行なうことにより、粉末混合物を焼成して焼成粉末混合物を生成する工程と、
c)焼結装置のツールセットによって画定される容積内に焼成粉末混合物を入れて、容積内に真空状態を作り出す工程と、
d)焼結温度に加熱しながら焼成粉末混合物に圧力を加えて焼結を行なってコーディエライト焼結体を形成する工程と、
e)コーディエライト焼結体の温度を下げる工程と、を含む、方法。
f.任意で、アニーリング温度に達するまで熱を加えてコーディエライト焼結体の温度を上昇させてアニーリングを行なうことにより、コーディエライト焼結体をアニーリングする工程と、
g.アニーリングしたコーディエライト焼結体の温度を下げる工程と、を含む、請求項16に記載の方法。
h.コーディエライト焼結体を機械加工して、フォトリソグラフィレチクル、光学素子の支持部材、真空チャック、静電チャック、支持チャック、マイクロリソグラフィプロセスで使用するレチクルチャックなどのコーディエライト焼結構成要素を作製する工程を含む、実施形態16又は17に記載の方法。
定義
コーディエライト焼結体の調製は、直流焼結及び関連技術と組み合わせた加圧支援焼結を用いて行なわれ、これは直流を使用して導電性のダイ構成又はツールセットを加熱し、それによって材料を焼結する。この加熱様式によって、非常に高い加熱及び冷却速度を適用することができ、粒子の成長を促進する拡散メカニズムを超える高密度化メカニズムを増強して、非常に微細な粒径と非常に高い密度(したがって低い多孔率)のコーディエライト焼結体の調製を容易にし、元の粉末の固有の特性をそれらのほぼ又は十分に高密度の生成物に移すことができる。本明細書で使用する場合、直流焼結技術は、粉末の圧密及び高密度化を促進するためにパルス化されていないDC電流を含んでいた。
本明細書では、Mg2Al4Si5O18を含み、少なくとも1つの表面を有するコーディエライト焼結体の少なくとも1つの層を含むフォトリソグラフィレチクルを開示し、コーディエライト焼結体は2.55~2.63g/ccの密度を有する。
本明細書では、スパーク放電プラズマ焼結(SPS)ツールを開示し、それは、少なくとも1つのセラミック粉末を受け入れることができる内部容積を画定する直径を有する内壁、及び外壁、を有する側壁を備えたダイと、ダイと動作可能に連結された上部パンチと下部パンチと、を含み、上部パンチと下部パンチの各々はダイの内壁の直径よりも小さい直径を画定する外壁を有し、それにより、上部パンチと下部パンチの少なくとも1つがダイの内部容積内で移動するときに、上部パンチ及び下部パンチの各々とダイの内壁との間の間隙を形成し、間隙は10μm~100μmの幅を有し、少なくとも1つのセラミック粉末は、ASTM C1274に従って測定して1~18m/gの比表面積(SSA)を有する。
・99wt%超、好ましくは99.2wt%超、より好ましくは99.4wt%超、より好ましくは99.6wt%超、より好ましくは99.8wt%超、より好ましくは99.9wt%超、より好ましくは99.99wt%超、より好ましくは99.999wt%超の炭素含有量、
・500ppm未満、好ましくは400ppm未満、より好ましくは300ppm未満、より好ましくは200ppm未満、より好ましくは100ppm未満、より好ましくは50ppm未満、より好ましくは10ppm未満、より好ましくは5ppm未満、より好ましくは3ppm未満の不純物、
・0.4.0~6.0MPa、好ましくは4.2~5.8MPa、より好ましくは4.4又は5.6MPaの範囲のグラファイトホイルの引張強度、及び/又は
・好ましくは1.0~1.2g/cc、好ましくは1.02~1.18g/cc、より好ましくは1.04~1.16g/cc、より好ましくは1.06~1.16g/ccの好ましくは範囲内のグラファイトホイルのバルク密度のうちの1つ以上を有する。
焼結して相が純粋なコーディエライト結晶相を形成する相対量で合わせたアルミナ、マグネシア、及びシリカの粉末を含む粉末混合物を作製した。アルミナ粉末は、約24m2/gの比表面積(SSA)、d10が約0.12um、d50が約0.67um、d90が約2.89umの粒径分布、及び100%純度のアルミナ粉末に対して99.9985%の純度を有していた。マグネシア粉末は、約4m2/gの比表面積、d10が約0.14um、d50が約3.3um、d90が約6.5umの粒径分布、及び100%純粋なマグネシアに対して99.7966%の純度を有していた。シリカ粉末は、焼成シリカ粉末を噴霧乾燥して、より大きな凝集体又は微結晶に一次粒子を凝集させてシリカ粒子を生成することにより形成され得る焼成シリカ粒子を含んでいた。シリカ粒子は球状及び非球状の両方の粒子を含み得る。本明細書に開示するレーザー散乱式粒径分布測定装置を用いた測定は、実質的に球形という粒子の形状の仮定に基づく。したがって、本明細書に開示するレーザー散乱式粒径分布法を用いた結果は、シリカ粒子の測定には十分な精度を与えない場合がある。したがって、本明細書に開示するシリカ粒子について報告される粒径は、文献に報告されている通りである。本明細書に開示するシリカ粒子は、20~40m2/gの比表面積、及びd50が200~250umの粒径分布、及び100%純度のシリカに対して99.999%を超える純度を有し得る。開示するような粒径分布を有するこの実施例によるシリカ粒子で作製されたコーディエライト焼結体は、粉末の凝集を示し、大きな粒径のd50を与える。このd50粒径により、焼結セラミック中の相の間のCTEの不一致のために焼結時に局所的なマイクロクラッキングを生じた。十分なエネルギーの粉砕と組み合わせたより小さいd50粒径を有する凝集のより少ない出発粉末を使用することにより、本明細書に開示するより均一でより小さい粒径分布が得られ、そのようなマイクロクラッキングを改善することができる。d10が0.03~0.3μm、d50が0.2~5μm、及びd90が40~120μmの粒径分布、及び20~40m2/gのSSAを有するシリカ粉末が好ましい。粉末を秤量し、焼結するとコーディエライト相を形成するモル比で合わせて、粉末混合物を作製した。次いで、粉末混合物をボールミリング用の容器に移した。粉末重量に対して120%の量のエタノールを粉末混合物に添加してスラリーを形成し、粉末重量に対して100%の混合媒体を添加して、粉末混合物を含む粉末の間の混合を促進した。24時間混合した後、粉末混合物を含有するスラリーをミキサーから取り出し、ロータリーエバポレーターを用いて、エタノールをスラリーから除去した。その後、粉末混合物を600℃で8時間焼成した。焼成は、水分含有量を減少させ、結晶化度を高め、場合によっては表面積を減少させる場合がある。焼成した粉末混合物は、任意で、焼成後に既知の方法に従って、篩い分け、タンブリング、ブレンドなどをしてもよい。焼成した粉末混合物は、23~27m2/gの表面積、d10が約2um、d50が約10um、d90が約87umの粒径分布、及び99.986%の純度を有していた。粉末混合物は、焼成の前又は後のいずれかに、任意で、篩い分け、ブレンド、粉砕などをしてもよい。次いで、本明細書に開示する方法に従って、焼成粉末混合物を、1200℃の温度、30MPaの圧力で30分間、真空下で焼結した。アルキメデス法を使用して測定した5回の測定の平均密度は、2.62g/cc又は理論密度の98.5%であった。標準偏差は0.002g/ccであった。それに応じて、密度の測定値から1.5%の体積又はバルク多孔率が計算される。図5にこの実施例によるコーディエライト焼結体のSEM顕微鏡写真を示す。微細構造中のシリカが豊富な領域(例えばクリストバライト及び/又はトリディマイトなどのシリカが豊富な石英相を含む)は、局所的な熱膨張係数(CTE)の分散及びそれに続く焼結時のマイクロクラッキング、並びに図4のXRDパターン(丸で囲まれた)に示されるように、トリディマイト又はクリストバライトなどの残留する石英のシリカが豊富な相を生じた。したがって、焼結体中のシリカが豊富な領域を低減又は排除し、マイクロクラッキングを防ぐためには、約100nmの一次粒径、及び約9um以下のd50を有するシリカの出発粉末を用い、更に10~75μm、好ましくは70um未満のように可能な限り小さいd90粒径、8~20m2/gのSSAを有する焼成粉末混合物を与える混合/粉砕プロセスを行なうことが好ましい。
アルミナ、マグネシア、及びシリカの粉末を含む粉末混合物を作製した。アルミナ粉末は、22~26m2/gの表面積、d10が約0.12um、d50が約0.67um、d90が約2.89umの粒径分布、及び100%純度のアルミナ粉末に対して99.9985%の純度を有していた。マグネシア粉末は、約4m2/gの表面積、d10が約0.14um、d50が約3.33um、d90が約6.49umの粒径分布、及び100%純粋なマグネシアに対して99.7966%の純度を有していた。シリカ粉末は、焼成シリカ粉末を噴霧乾燥して、より大きな凝集体又は微結晶に一次粒子を凝集させて焼成シリカ粒子を生成することにより形成され得る焼成シリカ粒子を含んでいた。シリカ粒子は、様々な量で球状粒子と非球状粒子の両方を含み得る粒子を含む。本明細書に開示するレーザー散乱式粒径分布測定装置を用いた測定は、実質的に球形という粒子の形状の仮定に基づく。したがって、本明細書に開示するレーザー散乱式粒径分布法を用いた結果は、シリカ粒子の測定には十分な精度を与えない場合がある。したがって、本明細書に開示するシリカ粒子について報告される粒径は、文献に報告されている通りである。本明細書に開示するシリカ粒子は、20~40m2/gの比表面積、及びd50が200~250umの粒径分布、及び100%純度のシリカに対して99.999%を超える純度を有し得る。粉末を秤量し、焼結するとコーディエライト相を形成するモル比で合わせて、粉末混合物を作製した。次いで、粉末混合物をボールミリング用の容器に移した。粉末重量に対して120%の量のエタノールを粉末混合物に添加してスラリーを形成し、粉末重量に対して100%の混合媒体を添加して、粉末混合物を含む粉末の間の混合を促進した。スラリーを16時間ボールミリングし、当業者に既知の回転蒸発を用いて、エタノールをスラリーから除去した。乾燥後、粉末混合物を、30分間の継続時間で当業者に知られている遊星ミル処理にかけた。その後、粉末混合物を600℃で8時間焼成した。焼成は、水分含有量を減少させ、結晶化度を高め、場合によっては表面積を減少させる場合がある。粉末混合物は、焼成の前又は後のいずれかに、任意で、篩い分け、ブレンド、粉砕などをしてもよい。焼成した粉末混合物は、23~27m2/gの表面積、d10が約1.5um、d50が約13um、d90が約85umの粒径分布、及び99.7365%の純度を有していた。次いで、本明細書に開示する方法に従って、焼成粉末混合物を、1180℃の温度、30MPaの圧力で30分間、真空下で焼結した。アルキメデス法を使用して測定した5回の測定の平均密度は、2.62g/cc又は理論密度の98.5%であった。微細構造中に明らかなシリカを含む領域は、熱膨張係数の分散を生じて、図5に示したものと同様にその後のマイクロクラッキングを発生させた。したがって、焼結体中のシリカが豊富な領域を低減又は排除し、マイクロクラッキングを防ぐためには、約100nmの一次粒径、及び約9um以下のd50を有するシリカの出発粉末を用い、更に10~75μm、好ましくは70um未満のように可能な限り小さいd90粒径、8~20m2/gのSSAを有する焼成粉末混合物を与える混合/粉砕プロセスを行なうことが好ましい場合がある。
Claims (15)
- X線回折、SEM、及び画像処理の方法を用いて測定して90~98体積%のコーディエライト結晶相を含むコーディエライト焼結体であって、前記コーディエライト焼結体がSEM及び画像処理の方法を用いて測定して0.1~5μmの直径を有する細孔を含む少なくとも1つの表面を有する、コーディエライト焼結体。
- 前記コーディエライト焼結体が、90体積%以上、好ましくは95体積%以上、好ましくは90~97体積%、好ましくは93~98体積%、好ましくは95~98体積%、好ましくは90~95体積%、好ましくは93~97体積%の量のコーディエライト結晶相を含む、請求項1に記載のコーディエライト焼結体。
- 前記少なくとも1つの表面が、0.1~4um、好ましくは0.1~3um、好ましくは0.1~2um、好ましくは0.1~1umの直径を有する細孔を含む、請求項1又は2に記載のコーディエライト焼結体。
- ASTM B962-17に従って測定して、2.55~2.63g/cc、好ましくは2.58~2.63g/cc、好ましくは2.61~2.63g/cc、好ましくは2.62~2.63g/ccの密度を有する、請求項1~3のいずれか一項に記載のコーディエライト焼結体。
- ASTM B962-17に従って行なわれる密度測定値から計算して、0.1~4%、好ましくは0.1~3%、好ましくは0.1~2%、好ましくは0.1~1%、好ましくは0.1~0.5%、好ましくは0.5~4%、好ましくは0.5~3%、好ましくは1~4%、好ましくは1~3%、好ましくは1~2%、好ましくは1.5~3.5%の体積多孔率を有する、請求項1~4のいずれか一項に記載のコーディエライト焼結体。
- ASTM E1876-15に従って測定して、125~180GPa、好ましくは125~160GPa、好ましくは125~140GPa、好ましくは130~180GPa、好ましくは130~160GPa、好ましくは130~150GPaのヤング率を有する、請求項1~5のいずれか一項に記載のコーディエライト焼結体。
- 前記コーディエライト焼結体がX線回折によって決定して実質的に結晶性である、請求項1~6のいずれか一項に記載のコーディエライト焼結体。
- ISO標準25178-2-2012に従って測定して、表面上の75nm以下、好ましくは50nm以下、好ましくは25nm以下、好ましくは15nm以下、好ましくは10nm以下、好ましくは2~15nm、好ましくは2~10nm、好ましくは2~8nm、好ましくは2~5nmの算術平均高さ(Sa)を有する、請求項1~7のいずれか一項に記載のコーディエライト焼結体。
- ISO標準25178-2-2012に従って、5.5μm未満、好ましくは4.0μm未満、好ましくは3.0μm未満、好ましくは2.0μm未満、好ましくは1.5μm未満、好ましくは1μm未満、好ましくは0.3~3μm、好ましくは0.3~2μm、好ましくは0.3~1μmの最大高さ(Sz)を有する、請求項1~8のいずれか一項に記載のコーディエライト焼結体。
- ICPMS法を使用して測定して、純度100%のコーディエライト焼結体に対して99.9~99.995%、好ましくは99.95~99.995%の純度を有する、請求項1~9のいずれか一項に記載のコーディエライト焼結体。
- X線回折、SEM及び画像処理の方法を用いて測定して、前記コーディエライト焼結体が約95体積%~約98体積%の量の前記コーディエライト結晶相と約2体積%~約体積5%の量のサフィリン結晶相とを含む、請求項1~10のいずれか一項に記載のコーディエライト焼結体。
- 請求項1~11のいずれか一項に記載のコーディエライト焼結体の少なくとも1つの層を含む、フォトリソグラフィレチクル。
- 粉末、粉末混合物、及び焼成粉末混合物の各々がタルク、カオリン、ギブサイト、ドロマイト、セピオライト、フォルステライト、並びに他の粘土及び粘土系化合物を含む天然に存在する材料を含まない、請求項1~12のいずれか一項に記載のコーディエライト焼結体。
- 前記コーディエライト焼結体が、タルク、カオリン、ギブサイト、ドロマイト、セピオライト、フォルステライト、並びに他の粘土及び粘土系化合物を含む天然に存在する材料を含まない、請求項1~13のいずれか一項に記載のコーディエライト焼結体。
- 前記コーディエライト焼結体が、リチウム(Li)、ナトリウム(Na)及びカリウム(K)を含むアルカリ金属元素、カルシウム(Ca)、ストロンチウム(Sr)及びバリウム(Ba)を含むアルカリ土類金属元素、クロム(Cr)、ニッケル(Ni)、鉄(Fe)、銅(Cu)、亜鉛(Zn)、鉛(Pb)、ルビジウム(Rb)を含む遷移金属、ホウ素(B)、ゲルマニウム(Ge)、ヒ素(As)、アンチモン(Sb)、及びビスマス(Bi)を含むメタロイド元素を含む、ガラス形成成分を含まない、請求項1~14のいずれか一項に記載のコーディエライト焼結体。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023207642A JP2024028925A (ja) | 2020-01-27 | 2023-12-08 | 半導体用途のための高純度コーディエライト材料 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202062966468P | 2020-01-27 | 2020-01-27 | |
US62/966,468 | 2020-01-27 | ||
PCT/US2021/015066 WO2021154713A1 (en) | 2020-01-27 | 2021-01-26 | High purity cordierite material for semiconductor applications |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023207642A Division JP2024028925A (ja) | 2020-01-27 | 2023-12-08 | 半導体用途のための高純度コーディエライト材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023508502A true JP2023508502A (ja) | 2023-03-02 |
JP7402344B2 JP7402344B2 (ja) | 2023-12-20 |
Family
ID=74732966
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022539687A Active JP7402344B2 (ja) | 2020-01-27 | 2021-01-26 | 半導体用途のための高純度コーディエライト材料 |
JP2023207642A Pending JP2024028925A (ja) | 2020-01-27 | 2023-12-08 | 半導体用途のための高純度コーディエライト材料 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023207642A Pending JP2024028925A (ja) | 2020-01-27 | 2023-12-08 | 半導体用途のための高純度コーディエライト材料 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20230137894A1 (ja) |
EP (1) | EP4097061A1 (ja) |
JP (2) | JP7402344B2 (ja) |
KR (1) | KR20220105666A (ja) |
CN (1) | CN114981229A (ja) |
TW (2) | TWI820642B (ja) |
WO (1) | WO2021154713A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11209171A (ja) * | 1998-01-21 | 1999-08-03 | Kyocera Corp | 緻密質低熱膨張セラミックス及びその製造方法、並びに半導体製造装置用部材 |
JP2002179459A (ja) * | 2000-09-20 | 2002-06-26 | Sumitomo Metal Ind Ltd | 低熱膨張セラミックスおよび露光装置用部材 |
JP2003292372A (ja) * | 2002-01-31 | 2003-10-15 | Ngk Spark Plug Co Ltd | セラミックス焼結体及びその製造方法 |
JP2017178773A (ja) * | 2016-03-23 | 2017-10-05 | 日本碍子株式会社 | コージェライト質焼結体、その製法及び複合基板 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000030995A1 (en) * | 1998-11-20 | 2000-06-02 | Corning Incorporated | Fabrication of low thermal expansion, high strength cordierite structures |
US6432856B1 (en) * | 1999-06-11 | 2002-08-13 | Corning Incorporated | Low expansion, high porosity, high strength cordierite body and method |
KR100719185B1 (ko) * | 2002-01-31 | 2007-05-16 | 엔지케이 스파크 플러그 캄파니 리미티드 | 세라믹소결체 및 그 제조방법 |
TWI307526B (en) * | 2002-08-06 | 2009-03-11 | Nikon Corp | Supporting device and the mamufacturing method thereof, stage device and exposure device |
JP2005314215A (ja) * | 2004-03-29 | 2005-11-10 | Ngk Insulators Ltd | 緻密質コーディエライト焼結体及びその製造方法 |
NL2003305A (en) | 2008-08-21 | 2010-03-10 | Asml Holding Nv | Euv reticle substrates with high thermal conductivity. |
JP2012502878A (ja) * | 2008-09-18 | 2012-02-02 | ダウ グローバル テクノロジーズ エルエルシー | 多孔質のムライト含有複合体の作製方法 |
US8530029B2 (en) * | 2008-11-26 | 2013-09-10 | Corning Incorporated | Low thermal mass cordierite bodies and methods for making same |
US20100156008A1 (en) | 2008-12-23 | 2010-06-24 | Thermal Technology Llc | Programmable System and Method of Spark Plasma Sintering |
US20130225392A1 (en) | 2010-10-26 | 2013-08-29 | Kyocera Corporation | Cordierite ceramic, and member for semiconductor manufacturing devices which comprises same |
JP2013100216A (ja) * | 2011-10-14 | 2013-05-23 | Asahi Glass Co Ltd | 酸化物セラミックス焼結体およびその製造方法 |
US9868670B2 (en) * | 2014-09-05 | 2018-01-16 | Corning Incorporated | High cordierite-to-mullite ratio cordierite-mullite-aluminum magnesium titanate compositions and ceramic articles comprising same |
JP5890945B1 (ja) * | 2014-06-06 | 2016-03-22 | 日本碍子株式会社 | コージェライト焼結体、その製法、複合基板及び電子デバイス |
KR102377658B1 (ko) * | 2016-03-23 | 2022-03-24 | 엔지케이 인슐레이터 엘티디 | 코디어라이트질 소결체, 그 제법 및 복합 기판 |
-
2021
- 2021-01-26 CN CN202180007657.9A patent/CN114981229A/zh active Pending
- 2021-01-26 US US17/759,163 patent/US20230137894A1/en active Pending
- 2021-01-26 WO PCT/US2021/015066 patent/WO2021154713A1/en unknown
- 2021-01-26 TW TW111110417A patent/TWI820642B/zh active
- 2021-01-26 EP EP21708089.4A patent/EP4097061A1/en active Pending
- 2021-01-26 TW TW110102904A patent/TWI762164B/zh active
- 2021-01-26 KR KR1020227021595A patent/KR20220105666A/ko unknown
- 2021-01-26 JP JP2022539687A patent/JP7402344B2/ja active Active
-
2023
- 2023-12-08 JP JP2023207642A patent/JP2024028925A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11209171A (ja) * | 1998-01-21 | 1999-08-03 | Kyocera Corp | 緻密質低熱膨張セラミックス及びその製造方法、並びに半導体製造装置用部材 |
JP2002179459A (ja) * | 2000-09-20 | 2002-06-26 | Sumitomo Metal Ind Ltd | 低熱膨張セラミックスおよび露光装置用部材 |
JP2003292372A (ja) * | 2002-01-31 | 2003-10-15 | Ngk Spark Plug Co Ltd | セラミックス焼結体及びその製造方法 |
JP2017178773A (ja) * | 2016-03-23 | 2017-10-05 | 日本碍子株式会社 | コージェライト質焼結体、その製法及び複合基板 |
Also Published As
Publication number | Publication date |
---|---|
KR20220105666A (ko) | 2022-07-27 |
JP2024028925A (ja) | 2024-03-05 |
TWI820642B (zh) | 2023-11-01 |
EP4097061A1 (en) | 2022-12-07 |
CN114981229A (zh) | 2022-08-30 |
WO2021154713A1 (en) | 2021-08-05 |
JP7402344B2 (ja) | 2023-12-20 |
US20230137894A1 (en) | 2023-05-04 |
TW202138335A (zh) | 2021-10-16 |
TWI762164B (zh) | 2022-04-21 |
TW202231602A (zh) | 2022-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101168863B1 (ko) | 착색 세라믹 진공 척 및 그 제조 방법 | |
JP2005314215A (ja) | 緻密質コーディエライト焼結体及びその製造方法 | |
JP5657210B2 (ja) | コージェライト質焼結体からなる半導体製造装置用部材 | |
JP2023543687A (ja) | 大きな寸法の焼結セラミック体及びその作製方法 | |
JPH11343168A (ja) | 低熱膨張黒色セラミックス及びその製造方法、並びに半導体製造装置用部材 | |
JP7402344B2 (ja) | 半導体用途のための高純度コーディエライト材料 | |
JP4903431B2 (ja) | 窒化珪素質焼結体とその製造方法、これを用いた半導体製造装置用部材および液晶製造装置用部材 | |
JP4429288B2 (ja) | 低熱膨張性セラミックスおよびそれを用いた半導体製造装置用部材 | |
JPH11209171A (ja) | 緻密質低熱膨張セラミックス及びその製造方法、並びに半導体製造装置用部材 | |
JP4446611B2 (ja) | 黒色低熱膨張セラミックスおよび露光装置用部材 | |
TW200932693A (en) | Glass-ceramic and glass-ceramic/ceramic composite semiconductor manufacturing article support devices | |
JP3805119B2 (ja) | 低熱膨張性セラミックスの製造方法 | |
JP2006347802A (ja) | 低熱膨張高比剛性セラミックス、その製造方法および静電チャック | |
JP4761948B2 (ja) | 炭化珪素質焼結及びそれを用いた半導体製造装置用部品 | |
JPH11130520A (ja) | 低熱膨張セラミックスおよびその製造方法 | |
KR20060063667A (ko) | 유리 성형틀용 세라믹스 | |
JP4540598B2 (ja) | ガラス成形型用セラミックス | |
JP2019509243A (ja) | 熱積層多層ジルコン系高温同時焼成セラミック(htcc)テープ及びその製造方法 | |
JP4473512B2 (ja) | セラミックス焼結体及びその製造方法 | |
Pandey et al. | Alumina dissolution process to fabricate bimodal pore architecture alumina with superior green and sintered properties | |
JP2001302340A (ja) | 緻密質低熱膨張セラミックスおよびその製造方法ならびに半導体製造装置用部材 | |
JP2014073928A (ja) | 酸化物セラミックス焼結体およびその製造方法 | |
JP2006089358A (ja) | 酸化アルミニウム質焼結体およびその製造方法ならびにこれを用いた半導体製造装置 | |
JP5488283B2 (ja) | TiO2を含有するシリカガラスの成型方法 | |
JP2004161512A (ja) | 低熱膨張セラミックス部材およびその製造方法ならびに半導体製造装置用部材 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220628 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20220707 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20221026 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230704 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230816 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7402344 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |