JP2023180486A - 圧電膜積層体およびその製造方法 - Google Patents

圧電膜積層体およびその製造方法 Download PDF

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Publication number
JP2023180486A
JP2023180486A JP2022093842A JP2022093842A JP2023180486A JP 2023180486 A JP2023180486 A JP 2023180486A JP 2022093842 A JP2022093842 A JP 2022093842A JP 2022093842 A JP2022093842 A JP 2022093842A JP 2023180486 A JP2023180486 A JP 2023180486A
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Japan
Prior art keywords
film
scaln
base material
base
crystal
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Pending
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JP2022093842A
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English (en)
Japanese (ja)
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JP2023180486A5 (https=
Inventor
明彦 勅使河原
Akihiko Teshigawara
英雄 山田
Hideo Yamada
竜一郎 阿部
Ryuichiro Abe
健治 木嶋
Kenji Kijima
哲也 榎本
Tetsuya Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Mirise Technologies Corp
Original Assignee
Denso Corp
Toyota Motor Corp
Mirise Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Toyota Motor Corp, Mirise Technologies Corp filed Critical Denso Corp
Priority to JP2022093842A priority Critical patent/JP2023180486A/ja
Priority to CN202310646405.1A priority patent/CN117222301A/zh
Priority to US18/330,988 priority patent/US20230413675A1/en
Publication of JP2023180486A publication Critical patent/JP2023180486A/ja
Publication of JP2023180486A5 publication Critical patent/JP2023180486A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2022093842A 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法 Pending JP2023180486A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022093842A JP2023180486A (ja) 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法
CN202310646405.1A CN117222301A (zh) 2022-06-09 2023-06-02 压电膜层叠体及其制造方法
US18/330,988 US20230413675A1 (en) 2022-06-09 2023-06-07 Piezoelectric film laminated body and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022093842A JP2023180486A (ja) 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法

Publications (2)

Publication Number Publication Date
JP2023180486A true JP2023180486A (ja) 2023-12-21
JP2023180486A5 JP2023180486A5 (https=) 2024-08-02

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ID=89039569

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JP2022093842A Pending JP2023180486A (ja) 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法

Country Status (3)

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US (1) US20230413675A1 (https=)
JP (1) JP2023180486A (https=)
CN (1) CN117222301A (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004505441A (ja) * 2000-07-20 2004-02-19 インフィネオン　テクノロジーズ　アクチエンゲゼルシャフト 音響信号または熱信号と電圧変化とを互いに変換するための層配列を備えた半導体素子、および、その製造方法
JP2005179167A (ja) * 2003-06-30 2005-07-07 Kenichiro Miyahara 薄膜形成用基板、薄膜基板及び発光素子
JP2009010926A (ja) * 2007-05-31 2009-01-15 National Institute Of Advanced Industrial & Technology 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
JP2011015148A (ja) * 2009-07-01 2011-01-20 National Institute Of Advanced Industrial Science & Technology 圧電体薄膜の製造方法および当該製造方法により製造される圧電体薄膜
JP2013014806A (ja) * 2011-07-04 2013-01-24 Denso Corp 結晶軸傾斜膜の製造方法
JP2013191870A (ja) * 2006-09-15 2013-09-26 Canon Inc 圧電素子及び液体吐出ヘッド
JP2017043518A (ja) * 2015-08-27 2017-03-02 国立研究開発法人物質・材料研究機構 ＳｉＣ繊維を含むハイブリッド複合材料およびその製造方法
WO2017163722A1 (ja) * 2016-03-25 2017-09-28 日本碍子株式会社 接合方法
JP2019161634A (ja) * 2018-03-07 2019-09-19 住友金属鉱山株式会社 表面弾性波素子用複合基板とその製造方法
JP2020033629A (ja) * 2018-08-31 2020-03-05 Tdk株式会社 強誘電性薄膜、強誘電性薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置
JP2022075451A (ja) * 2020-11-03 2022-05-18 株式会社デンソー 圧電素子、圧電装置、および圧電素子の製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004505441A (ja) * 2000-07-20 2004-02-19 インフィネオン　テクノロジーズ　アクチエンゲゼルシャフト 音響信号または熱信号と電圧変化とを互いに変換するための層配列を備えた半導体素子、および、その製造方法
JP2005179167A (ja) * 2003-06-30 2005-07-07 Kenichiro Miyahara 薄膜形成用基板、薄膜基板及び発光素子
JP2013191870A (ja) * 2006-09-15 2013-09-26 Canon Inc 圧電素子及び液体吐出ヘッド
JP2009010926A (ja) * 2007-05-31 2009-01-15 National Institute Of Advanced Industrial & Technology 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
JP2011015148A (ja) * 2009-07-01 2011-01-20 National Institute Of Advanced Industrial Science & Technology 圧電体薄膜の製造方法および当該製造方法により製造される圧電体薄膜
JP2013014806A (ja) * 2011-07-04 2013-01-24 Denso Corp 結晶軸傾斜膜の製造方法
JP2017043518A (ja) * 2015-08-27 2017-03-02 国立研究開発法人物質・材料研究機構 ＳｉＣ繊維を含むハイブリッド複合材料およびその製造方法
WO2017163722A1 (ja) * 2016-03-25 2017-09-28 日本碍子株式会社 接合方法
JP2019161634A (ja) * 2018-03-07 2019-09-19 住友金属鉱山株式会社 表面弾性波素子用複合基板とその製造方法
JP2020033629A (ja) * 2018-08-31 2020-03-05 Tdk株式会社 強誘電性薄膜、強誘電性薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置
JP2022075451A (ja) * 2020-11-03 2022-05-18 株式会社デンソー 圧電素子、圧電装置、および圧電素子の製造方法

Also Published As

Publication number Publication date
CN117222301A (zh) 2023-12-12
US20230413675A1 (en) 2023-12-21

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