CN117222301A - 压电膜层叠体及其制造方法 - Google Patents

压电膜层叠体及其制造方法 Download PDF

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Publication number
CN117222301A
CN117222301A CN202310646405.1A CN202310646405A CN117222301A CN 117222301 A CN117222301 A CN 117222301A CN 202310646405 A CN202310646405 A CN 202310646405A CN 117222301 A CN117222301 A CN 117222301A
Authority
CN
China
Prior art keywords
film
substrate
crystal
scaaln
substrate material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310646405.1A
Other languages
English (en)
Chinese (zh)
Inventor
勅使河原明彦
山田英雄
阿部竜一郎
木岛健治
榎本哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Mirise Technologies Corp
Original Assignee
Denso Corp
Toyota Motor Corp
Mirise Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Toyota Motor Corp, Mirise Technologies Corp filed Critical Denso Corp
Publication of CN117222301A publication Critical patent/CN117222301A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN202310646405.1A 2022-06-09 2023-06-02 压电膜层叠体及其制造方法 Pending CN117222301A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-093842 2022-06-09
JP2022093842A JP2023180486A (ja) 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法

Publications (1)

Publication Number Publication Date
CN117222301A true CN117222301A (zh) 2023-12-12

Family

ID=89039569

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310646405.1A Pending CN117222301A (zh) 2022-06-09 2023-06-02 压电膜层叠体及其制造方法

Country Status (3)

Country Link
US (1) US20230413675A1 (https=)
JP (1) JP2023180486A (https=)
CN (1) CN117222301A (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10035423C1 (de) * 2000-07-20 2001-11-22 Infineon Technologies Ag Halbleiterbauelement mit einer Schichtenfolge zum ineinander Umwandeln von akustischen oder thermischen Signalen und elektrischen Spannungsänderungen und Verfahren zu dessen Herstellung
JP2005179167A (ja) * 2003-06-30 2005-07-07 Kenichiro Miyahara 薄膜形成用基板、薄膜基板及び発光素子
US8114307B2 (en) * 2006-09-15 2012-02-14 Canon Kabushiki Kaisha Piezoelectric body and liquid discharge head
JP5190841B2 (ja) * 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
JP5598948B2 (ja) * 2009-07-01 2014-10-01 独立行政法人産業技術総合研究所 圧電体薄膜の製造方法および当該製造方法により製造される圧電体薄膜
JP5510403B2 (ja) * 2011-07-04 2014-06-04 株式会社デンソー 結晶軸傾斜膜の製造方法
JP6551059B2 (ja) * 2015-08-27 2019-07-31 国立研究開発法人物質・材料研究機構 ＳｉＣ繊維を含むハイブリッド複合材料およびその製造方法
JP6427712B2 (ja) * 2016-03-25 2018-11-21 日本碍子株式会社 接合方法
JP2019161634A (ja) * 2018-03-07 2019-09-19 住友金属鉱山株式会社 表面弾性波素子用複合基板とその製造方法
JP7061752B2 (ja) * 2018-08-31 2022-05-02 Tdk株式会社 強誘電性薄膜、強誘電性薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置
JP7359169B2 (ja) * 2020-11-03 2023-10-11 株式会社デンソー 圧電素子、圧電装置、および圧電素子の製造方法

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Publication number Publication date
JP2023180486A (ja) 2023-12-21
US20230413675A1 (en) 2023-12-21

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