JP2023105952A5 - - Google Patents
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- JP2023105952A5 JP2023105952A5 JP2022007010A JP2022007010A JP2023105952A5 JP 2023105952 A5 JP2023105952 A5 JP 2023105952A5 JP 2022007010 A JP2022007010 A JP 2022007010A JP 2022007010 A JP2022007010 A JP 2022007010A JP 2023105952 A5 JP2023105952 A5 JP 2023105952A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- aln
- hvpe
- layer
- aln layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022007010A JP2023105952A (ja) | 2022-01-20 | 2022-01-20 | 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 |
| US18/726,142 US20250063859A1 (en) | 2022-01-20 | 2022-12-26 | Aluminum nitride single crystal substrate, semiconductor wafer using the aluminum nitride single crystal substrate, and manufacturing methods of the same |
| CN202280087906.4A CN118510945A (zh) | 2022-01-20 | 2022-12-26 | 氮化铝单晶基板、使用氮化铝单晶基板的半导体晶圆及其制造方法 |
| EP22922207.0A EP4467690A4 (en) | 2022-01-20 | 2022-12-26 | MONOCRYSTALLINE ALUMINUM NITRID SUBSTRATE, SEMICONDUCTOR SLICE USING A MONOCRYSTALLINE ALUMINUM NITRID SUBSTRATE AND RELATED PRODUCTION PROCESSES |
| PCT/JP2022/047879 WO2023140057A1 (ja) | 2022-01-20 | 2022-12-26 | 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022007010A JP2023105952A (ja) | 2022-01-20 | 2022-01-20 | 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023105952A JP2023105952A (ja) | 2023-08-01 |
| JP2023105952A5 true JP2023105952A5 (https=) | 2025-01-21 |
Family
ID=87348231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022007010A Pending JP2023105952A (ja) | 2022-01-20 | 2022-01-20 | 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250063859A1 (https=) |
| EP (1) | EP4467690A4 (https=) |
| JP (1) | JP2023105952A (https=) |
| CN (1) | CN118510945A (https=) |
| WO (1) | WO2023140057A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3580600B2 (ja) * | 1995-06-09 | 2004-10-27 | 株式会社ルネサステクノロジ | 半導体装置の製造方法およびそれに使用される半導体ウエハ並びにその製造方法 |
| EP2498293B1 (en) * | 2009-11-06 | 2018-08-01 | NGK Insulators, Ltd. | Epitaxial substrate for semiconductor element and method for producing epitaxial substrate for semiconductor element |
| CN108713075B (zh) * | 2016-03-23 | 2020-11-13 | 株式会社德山 | 氮化铝单晶基板的制造方法 |
| US10644199B2 (en) | 2016-09-14 | 2020-05-05 | Stanley Electric Co., Ltd. | Group III nitride stacked body, and semiconductor device having the stacked body |
| US11767612B2 (en) * | 2017-09-22 | 2023-09-26 | Tokuyama Corporation | Group III nitride single crystal substrate |
| CN115698394A (zh) * | 2020-06-29 | 2023-02-03 | 日本碍子株式会社 | 外延结晶生长用自立基板及功能元件 |
| JP6978641B1 (ja) * | 2020-09-17 | 2021-12-08 | 日本碍子株式会社 | Ｉｉｉ族元素窒化物半導体基板 |
-
2022
- 2022-01-20 JP JP2022007010A patent/JP2023105952A/ja active Pending
- 2022-12-26 WO PCT/JP2022/047879 patent/WO2023140057A1/ja not_active Ceased
- 2022-12-26 EP EP22922207.0A patent/EP4467690A4/en active Pending
- 2022-12-26 US US18/726,142 patent/US20250063859A1/en active Pending
- 2022-12-26 CN CN202280087906.4A patent/CN118510945A/zh active Pending
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