JP2023105952A - 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 - Google Patents

単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 Download PDF

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JP2023105952A
JP2023105952A JP2022007010A JP2022007010A JP2023105952A JP 2023105952 A JP2023105952 A JP 2023105952A JP 2022007010 A JP2022007010 A JP 2022007010A JP 2022007010 A JP2022007010 A JP 2022007010A JP 2023105952 A JP2023105952 A JP 2023105952A
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Japan
Prior art keywords
layer
aln
aln substrate
substrate
single crystal
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JP2022007010A
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English (en)
Japanese (ja)
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JP2023105952A5 (https=
Inventor
亨 木下
Toru Kinoshita
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2022007010A priority Critical patent/JP2023105952A/ja
Priority to US18/726,142 priority patent/US20250063859A1/en
Priority to CN202280087906.4A priority patent/CN118510945A/zh
Priority to EP22922207.0A priority patent/EP4467690A4/en
Priority to PCT/JP2022/047879 priority patent/WO2023140057A1/ja
Publication of JP2023105952A publication Critical patent/JP2023105952A/ja
Publication of JP2023105952A5 publication Critical patent/JP2023105952A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP2022007010A 2022-01-20 2022-01-20 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 Pending JP2023105952A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022007010A JP2023105952A (ja) 2022-01-20 2022-01-20 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法
US18/726,142 US20250063859A1 (en) 2022-01-20 2022-12-26 Aluminum nitride single crystal substrate, semiconductor wafer using the aluminum nitride single crystal substrate, and manufacturing methods of the same
CN202280087906.4A CN118510945A (zh) 2022-01-20 2022-12-26 氮化铝单晶基板、使用氮化铝单晶基板的半导体晶圆及其制造方法
EP22922207.0A EP4467690A4 (en) 2022-01-20 2022-12-26 MONOCRYSTALLINE ALUMINUM NITRID SUBSTRATE, SEMICONDUCTOR SLICE USING A MONOCRYSTALLINE ALUMINUM NITRID SUBSTRATE AND RELATED PRODUCTION PROCESSES
PCT/JP2022/047879 WO2023140057A1 (ja) 2022-01-20 2022-12-26 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022007010A JP2023105952A (ja) 2022-01-20 2022-01-20 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法

Publications (2)

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JP2023105952A true JP2023105952A (ja) 2023-08-01
JP2023105952A5 JP2023105952A5 (https=) 2025-01-21

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JP2022007010A Pending JP2023105952A (ja) 2022-01-20 2022-01-20 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法

Country Status (5)

Country Link
US (1) US20250063859A1 (https=)
EP (1) EP4467690A4 (https=)
JP (1) JP2023105952A (https=)
CN (1) CN118510945A (https=)
WO (1) WO2023140057A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011055774A1 (ja) * 2009-11-06 2011-05-12 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法
WO2019059381A1 (ja) * 2017-09-22 2019-03-28 株式会社トクヤマ Ｉｉｉ族窒化物単結晶基板
WO2022004046A1 (ja) * 2020-06-29 2022-01-06 日本碍子株式会社 エピタキシャル結晶成長用自立基板および機能素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3580600B2 (ja) * 1995-06-09 2004-10-27 株式会社ルネサステクノロジ 半導体装置の製造方法およびそれに使用される半導体ウエハ並びにその製造方法
CN108713075B (zh) * 2016-03-23 2020-11-13 株式会社德山 氮化铝单晶基板的制造方法
US10644199B2 (en) 2016-09-14 2020-05-05 Stanley Electric Co., Ltd. Group III nitride stacked body, and semiconductor device having the stacked body
JP6978641B1 (ja) * 2020-09-17 2021-12-08 日本碍子株式会社 Ｉｉｉ族元素窒化物半導体基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011055774A1 (ja) * 2009-11-06 2011-05-12 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法
WO2019059381A1 (ja) * 2017-09-22 2019-03-28 株式会社トクヤマ Ｉｉｉ族窒化物単結晶基板
WO2022004046A1 (ja) * 2020-06-29 2022-01-06 日本碍子株式会社 エピタキシャル結晶成長用自立基板および機能素子

Also Published As

Publication number Publication date
US20250063859A1 (en) 2025-02-20
EP4467690A4 (en) 2025-11-19
CN118510945A (zh) 2024-08-16
EP4467690A1 (en) 2024-11-27
WO2023140057A1 (ja) 2023-07-27

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