JP2023085505A5 - - Google Patents

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Publication number
JP2023085505A5
JP2023085505A5 JP2023062608A JP2023062608A JP2023085505A5 JP 2023085505 A5 JP2023085505 A5 JP 2023085505A5 JP 2023062608 A JP2023062608 A JP 2023062608A JP 2023062608 A JP2023062608 A JP 2023062608A JP 2023085505 A5 JP2023085505 A5 JP 2023085505A5
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JP
Japan
Prior art keywords
electrode
sic layer
semiconductor device
region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023062608A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023085505A (ja
JP7472356B2 (ja
Filing date
Publication date
Priority claimed from JP2020202840A external-priority patent/JP6956247B2/ja
Priority claimed from JP2021163271A external-priority patent/JP7261277B2/ja
Application filed filed Critical
Priority to JP2023062608A priority Critical patent/JP7472356B2/ja
Publication of JP2023085505A publication Critical patent/JP2023085505A/ja
Publication of JP2023085505A5 publication Critical patent/JP2023085505A5/ja
Priority to JP2024063450A priority patent/JP7769746B2/ja
Application granted granted Critical
Publication of JP7472356B2 publication Critical patent/JP7472356B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2023062608A 2020-12-07 2023-04-07 半導体装置 Active JP7472356B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023062608A JP7472356B2 (ja) 2020-12-07 2023-04-07 半導体装置
JP2024063450A JP7769746B2 (ja) 2020-12-07 2024-04-10 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020202840A JP6956247B2 (ja) 2019-10-03 2020-12-07 半導体装置
JP2021163271A JP7261277B2 (ja) 2020-12-07 2021-10-04 半導体装置
JP2023062608A JP7472356B2 (ja) 2020-12-07 2023-04-07 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2021163271A Division JP7261277B2 (ja) 2020-12-07 2021-10-04 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024063450A Division JP7769746B2 (ja) 2020-12-07 2024-04-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2023085505A JP2023085505A (ja) 2023-06-20
JP2023085505A5 true JP2023085505A5 (enExample) 2023-07-20
JP7472356B2 JP7472356B2 (ja) 2024-04-22

Family

ID=79242008

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021163271A Active JP7261277B2 (ja) 2020-12-07 2021-10-04 半導体装置
JP2023062608A Active JP7472356B2 (ja) 2020-12-07 2023-04-07 半導体装置
JP2024063450A Active JP7769746B2 (ja) 2020-12-07 2024-04-10 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2021163271A Active JP7261277B2 (ja) 2020-12-07 2021-10-04 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024063450A Active JP7769746B2 (ja) 2020-12-07 2024-04-10 半導体装置

Country Status (1)

Country Link
JP (3) JP7261277B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024031704A (ja) 2022-08-26 2024-03-07 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197914A (ja) 2001-12-28 2003-07-11 Fuji Electric Co Ltd 半導体装置
JP4797368B2 (ja) * 2004-11-30 2011-10-19 株式会社デンソー 半導体装置の製造方法
JP2007294668A (ja) * 2006-04-25 2007-11-08 Toyota Industries Corp 半導体装置
JP5358960B2 (ja) * 2008-01-28 2013-12-04 富士電機株式会社 半導体装置およびその製造方法
JP2010062377A (ja) * 2008-09-04 2010-03-18 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5401409B2 (ja) * 2010-07-22 2014-01-29 ルネサスエレクトロニクス株式会社 半導体装置
WO2012137412A1 (ja) * 2011-04-05 2012-10-11 三菱電機株式会社 半導体装置およびその製造方法
JP2013012652A (ja) * 2011-06-30 2013-01-17 Fuji Electric Co Ltd 逆阻止絶縁ゲート型バイポーラトランジスタとその製造方法
JP5677222B2 (ja) 2011-07-25 2015-02-25 三菱電機株式会社 炭化珪素半導体装置
US8809942B2 (en) * 2011-09-21 2014-08-19 Kabushiki Kaisha Toshiba Semiconductor device having trench structure
JP6037495B2 (ja) 2011-10-17 2016-12-07 ローム株式会社 半導体装置およびその製造方法
JP6063629B2 (ja) 2012-03-12 2017-01-18 ローム株式会社 半導体装置および半導体装置の製造方法
JP6956247B2 (ja) 2019-10-03 2021-11-02 ローム株式会社 半導体装置

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