JP7261277B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7261277B2 JP7261277B2 JP2021163271A JP2021163271A JP7261277B2 JP 7261277 B2 JP7261277 B2 JP 7261277B2 JP 2021163271 A JP2021163271 A JP 2021163271A JP 2021163271 A JP2021163271 A JP 2021163271A JP 7261277 B2 JP7261277 B2 JP 7261277B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- insulating film
- electrode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 118
- 230000002093 peripheral effect Effects 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 23
- 239000012212 insulator Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 114
- 239000002184 metal Substances 0.000 description 110
- 229910052751 metal Inorganic materials 0.000 description 110
- 238000002161 passivation Methods 0.000 description 31
- 238000012360 testing method Methods 0.000 description 16
- 210000000746 body region Anatomy 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 239000010949 copper Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910016570 AlCu Inorganic materials 0.000 description 4
- 229910018182 Al—Cu Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021163271A JP7261277B2 (ja) | 2020-12-07 | 2021-10-04 | 半導体装置 |
| JP2023062608A JP7472356B2 (ja) | 2020-12-07 | 2023-04-07 | 半導体装置 |
| JP2024063450A JP7769746B2 (ja) | 2020-12-07 | 2024-04-10 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020202840A JP6956247B2 (ja) | 2019-10-03 | 2020-12-07 | 半導体装置 |
| JP2021163271A JP7261277B2 (ja) | 2020-12-07 | 2021-10-04 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020202840A Division JP6956247B2 (ja) | 2019-10-03 | 2020-12-07 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023062608A Division JP7472356B2 (ja) | 2020-12-07 | 2023-04-07 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022000921A JP2022000921A (ja) | 2022-01-04 |
| JP7261277B2 true JP7261277B2 (ja) | 2023-04-19 |
Family
ID=79242008
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021163271A Active JP7261277B2 (ja) | 2020-12-07 | 2021-10-04 | 半導体装置 |
| JP2023062608A Active JP7472356B2 (ja) | 2020-12-07 | 2023-04-07 | 半導体装置 |
| JP2024063450A Active JP7769746B2 (ja) | 2020-12-07 | 2024-04-10 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023062608A Active JP7472356B2 (ja) | 2020-12-07 | 2023-04-07 | 半導体装置 |
| JP2024063450A Active JP7769746B2 (ja) | 2020-12-07 | 2024-04-10 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (3) | JP7261277B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024031704A (ja) | 2022-08-26 | 2024-03-07 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003197914A (ja) | 2001-12-28 | 2003-07-11 | Fuji Electric Co Ltd | 半導体装置 |
| JP2013026563A (ja) | 2011-07-25 | 2013-02-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| JP2013102111A (ja) | 2011-10-17 | 2013-05-23 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| WO2013137177A1 (ja) | 2012-03-12 | 2013-09-19 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2021048413A (ja) | 2019-10-03 | 2021-03-25 | ローム株式会社 | 半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4797368B2 (ja) * | 2004-11-30 | 2011-10-19 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2007294668A (ja) * | 2006-04-25 | 2007-11-08 | Toyota Industries Corp | 半導体装置 |
| JP5358960B2 (ja) * | 2008-01-28 | 2013-12-04 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| JP2010062377A (ja) * | 2008-09-04 | 2010-03-18 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP5401409B2 (ja) * | 2010-07-22 | 2014-01-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| WO2012137412A1 (ja) * | 2011-04-05 | 2012-10-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP2013012652A (ja) * | 2011-06-30 | 2013-01-17 | Fuji Electric Co Ltd | 逆阻止絶縁ゲート型バイポーラトランジスタとその製造方法 |
| US8809942B2 (en) * | 2011-09-21 | 2014-08-19 | Kabushiki Kaisha Toshiba | Semiconductor device having trench structure |
-
2021
- 2021-10-04 JP JP2021163271A patent/JP7261277B2/ja active Active
-
2023
- 2023-04-07 JP JP2023062608A patent/JP7472356B2/ja active Active
-
2024
- 2024-04-10 JP JP2024063450A patent/JP7769746B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003197914A (ja) | 2001-12-28 | 2003-07-11 | Fuji Electric Co Ltd | 半導体装置 |
| JP2013026563A (ja) | 2011-07-25 | 2013-02-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| JP2013102111A (ja) | 2011-10-17 | 2013-05-23 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| WO2013137177A1 (ja) | 2012-03-12 | 2013-09-19 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2021048413A (ja) | 2019-10-03 | 2021-03-25 | ローム株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7769746B2 (ja) | 2025-11-13 |
| JP2023085505A (ja) | 2023-06-20 |
| JP7472356B2 (ja) | 2024-04-22 |
| JP2024096848A (ja) | 2024-07-17 |
| JP2022000921A (ja) | 2022-01-04 |
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