JP2023081982A - 表示装置 - Google Patents
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- JP2023081982A JP2023081982A JP2023035966A JP2023035966A JP2023081982A JP 2023081982 A JP2023081982 A JP 2023081982A JP 2023035966 A JP2023035966 A JP 2023035966A JP 2023035966 A JP2023035966 A JP 2023035966A JP 2023081982 A JP2023081982 A JP 2023081982A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- Electroluminescent Light Sources (AREA)
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Abstract
【解決手段】表示装置は、第1電極、前記第1電極と離隔して対向するように配置された第2電極、前記第1電極と前記第2電極を覆うように配置された第1絶縁層、前記第1絶縁層上の少なくとも一部に配置され、前記第1電極および前記第2電極と前記第1絶縁層が重なる領域の少なくとも一部を露出する第2絶縁層および前記第1電極と前記第2電極との間で前記露出した第1絶縁層上に配置された少なくとも一つの発光素子を含み、前記第2絶縁層は、前記第1絶縁層を露出させて前記第1電極および前記第2電極が互いに対向する領域上で互いに離隔して配置された少なくとも一つの開口部と、前記開口部の間の領域であるブリッジ部を含み、前記発光素子は、前記開口部上に配置され得る。
【選択図】図1
Description
Claims (1)
- 第1電極と、
前記第1電極と離隔して対向するように配置された第2電極と、
前記第1電極と前記第2電極を覆うように配置された第1絶縁層と、
前記第1絶縁層上の少なくとも一部に配置され、前記第1電極および前記第2電極と前記第1絶縁層が重なる領域の少なくとも一部を露出する第2絶縁層と、
前記第1電極と前記第2電極との間で前記露出した第1絶縁層上に配置された少なくとも一つの発光素子と、
を含み、
前記第2絶縁層は、
前記第1絶縁層を露出させて前記第1電極および前記第2電極が互いに対向する領域上で互いに離隔して配置された少なくとも一つの開口部と、
前記開口部の間の領域であるブリッジ部と、
を含み、
前記発光素子は、前記開口部上に配置される、表示装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0077640 | 2018-07-04 | ||
KR1020180077640A KR102585158B1 (ko) | 2018-07-04 | 2018-07-04 | 표시 장치 |
PCT/KR2018/011285 WO2020009274A1 (ko) | 2018-07-04 | 2018-09-21 | 표시 장치 |
JP2020573435A JP7242716B2 (ja) | 2018-07-04 | 2018-09-21 | 表示装置 |
Related Parent Applications (1)
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KR102545982B1 (ko) * | 2018-07-24 | 2023-06-21 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102526778B1 (ko) | 2018-08-07 | 2023-05-02 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치 제조 방법 |
KR102568353B1 (ko) | 2018-08-16 | 2023-08-18 | 삼성디스플레이 주식회사 | 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치 |
KR102654268B1 (ko) * | 2018-10-10 | 2024-04-03 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102645641B1 (ko) | 2018-11-05 | 2024-03-08 | 삼성디스플레이 주식회사 | 화소, 그것을 포함하는 표시 장치, 및 그것의 제조 방법 |
KR102649218B1 (ko) | 2018-11-15 | 2024-03-19 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치 제조 방법 |
KR20210054119A (ko) * | 2019-11-04 | 2021-05-13 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20210059110A (ko) * | 2019-11-14 | 2021-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20200014868A (ko) * | 2020-01-22 | 2020-02-11 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
KR20210095760A (ko) * | 2020-01-23 | 2021-08-03 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
KR20210124564A (ko) * | 2020-04-03 | 2021-10-15 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20210124594A (ko) * | 2020-04-06 | 2021-10-15 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20210138834A (ko) | 2020-05-12 | 2021-11-22 | 삼성디스플레이 주식회사 | 타일형 표시 장치 |
KR20210143350A (ko) * | 2020-05-19 | 2021-11-29 | 삼성디스플레이 주식회사 | 표시 장치 |
CN115699323A (zh) * | 2020-05-26 | 2023-02-03 | 三星显示有限公司 | 显示装置 |
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KR20220054507A (ko) * | 2020-10-23 | 2022-05-03 | 삼성디스플레이 주식회사 | 화소 및 이를 구비한 표시 장치 |
KR20220091703A (ko) | 2020-12-23 | 2022-07-01 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20230054536A (ko) * | 2021-10-15 | 2023-04-25 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4264994B2 (ja) * | 1998-07-10 | 2009-05-20 | 凸版印刷株式会社 | 有機エレクトロルミネッセンス表示素子の製造方法 |
KR100698689B1 (ko) * | 2004-08-30 | 2007-03-23 | 삼성에스디아이 주식회사 | 발광 표시장치와 그의 제조방법 |
KR100763894B1 (ko) | 2006-03-21 | 2007-10-05 | 삼성에스디아이 주식회사 | Led 칩을 이용한 디스플레이 장치의 제조방법 |
KR20100000721A (ko) | 2008-06-25 | 2010-01-06 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 |
CN102549638B (zh) | 2009-10-09 | 2015-04-01 | 株式会社半导体能源研究所 | 发光显示器件以及包括该发光显示器件的电子设备 |
KR20110041401A (ko) | 2009-10-15 | 2011-04-21 | 샤프 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
US8872214B2 (en) | 2009-10-19 | 2014-10-28 | Sharp Kabushiki Kaisha | Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device |
KR20120014866A (ko) * | 2010-08-10 | 2012-02-20 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
CN102375277B (zh) | 2010-08-10 | 2014-05-28 | 乐金显示有限公司 | 液晶显示装置及其制造方法 |
KR101244926B1 (ko) | 2011-04-28 | 2013-03-18 | 피에스아이 주식회사 | 초소형 led 소자 및 그 제조방법 |
KR101209449B1 (ko) | 2011-04-29 | 2012-12-07 | 피에스아이 주식회사 | 풀-칼라 led 디스플레이 장치 및 그 제조방법 |
JP6007046B2 (ja) | 2012-09-27 | 2016-10-12 | シャープ株式会社 | 表示装置 |
CN105453284B (zh) | 2013-07-09 | 2018-03-20 | Psi株式会社 | 超小型发光二极管电极组件及其制造方法 |
TWI619267B (zh) * | 2013-10-22 | 2018-03-21 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
KR20160027875A (ko) * | 2014-08-28 | 2016-03-10 | 서울바이오시스 주식회사 | 발광소자 |
KR101672781B1 (ko) | 2014-11-18 | 2016-11-07 | 피에스아이 주식회사 | 수평배열 어셈블리용 초소형 led 소자, 이의 제조방법 및 이를 포함하는 수평배열 어셈블리 |
KR102471111B1 (ko) * | 2015-11-23 | 2022-11-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102450473B1 (ko) * | 2015-12-22 | 2022-09-30 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR102631260B1 (ko) * | 2016-04-08 | 2024-01-31 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치 제조방법 |
KR20180007025A (ko) | 2016-07-11 | 2018-01-22 | 삼성디스플레이 주식회사 | 초소형 발광 소자를 포함하는 픽셀 구조체, 표시장치 및 그 제조방법 |
KR102608419B1 (ko) | 2016-07-12 | 2023-12-01 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치의 제조방법 |
KR20180066320A (ko) * | 2016-12-07 | 2018-06-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102587215B1 (ko) | 2016-12-21 | 2023-10-12 | 삼성디스플레이 주식회사 | 발광 장치 및 이를 구비한 표시 장치 |
US10984702B2 (en) * | 2018-06-22 | 2021-04-20 | Epistar Corporation | Display apparatus with array of light emitting diodes and method of manufacturing the same |
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KR20230145962A (ko) | 2023-10-18 |
US20220384518A1 (en) | 2022-12-01 |
EP3819940A1 (en) | 2021-05-12 |
US11411044B2 (en) | 2022-08-09 |
JP2021529352A (ja) | 2021-10-28 |
US11817474B2 (en) | 2023-11-14 |
TW202006943A (zh) | 2020-02-01 |
CN112385045A (zh) | 2021-02-19 |
TWI816826B (zh) | 2023-10-01 |
WO2020009274A1 (ko) | 2020-01-09 |
KR102661100B1 (ko) | 2024-04-26 |
EP3819940A4 (en) | 2022-03-30 |
KR20200004936A (ko) | 2020-01-15 |
US20240088198A1 (en) | 2024-03-14 |
JP7242716B2 (ja) | 2023-03-20 |
EP3819940B1 (en) | 2023-11-15 |
US20210327954A1 (en) | 2021-10-21 |
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