JP2023044722A - シリコンカーバイドに基づくｍｐｓ装置におけるｊｂダイオードとショットキーダイオードの文脈的形成及びｍｐｓ装置 - Google Patents

シリコンカーバイドに基づくｍｐｓ装置におけるｊｂダイオードとショットキーダイオードの文脈的形成及びｍｐｓ装置 Download PDF

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JP2023044722A
JP2023044722A JP2022144755A JP2022144755A JP2023044722A JP 2023044722 A JP2023044722 A JP 2023044722A JP 2022144755 A JP2022144755 A JP 2022144755A JP 2022144755 A JP2022144755 A JP 2022144755A JP 2023044722 A JP2023044722 A JP 2023044722A
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region
electrical conductivity
semiconductor layer
solid body
layer
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JP2022144755A
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JP2023044722A5 (https=
Inventor
ジャッナーツォ フィリッポ
Giannazzo Filippo
グレコ ジウセッペ
Greco Giuseppe
ロッカフォルテ ファブリヅィオ
Roccaforte Fabrizio
ラスクーナ シモーネ
Rascuna Simone
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STMicroelectronics SRL
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STMicroelectronics SRL
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Publication of JP2023044722A publication Critical patent/JP2023044722A/ja
Publication of JP2023044722A5 publication Critical patent/JP2023044722A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Electrodes Of Semiconductors (AREA)
JP2022144755A 2021-09-20 2022-09-12 シリコンカーバイドに基づくｍｐｓ装置におけるｊｂダイオードとショットキーダイオードの文脈的形成及びｍｐｓ装置 Pending JP2023044722A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT102021000024104 2021-09-20
IT102021000024104A IT202100024104A1 (it) 2021-09-20 2021-09-20 Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps

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JP2023044722A true JP2023044722A (ja) 2023-03-31
JP2023044722A5 JP2023044722A5 (https=) 2025-09-11

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JP2022144755A Pending JP2023044722A (ja) 2021-09-20 2022-09-12 シリコンカーバイドに基づくｍｐｓ装置におけるｊｂダイオードとショットキーダイオードの文脈的形成及びｍｐｓ装置

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US (2) US12426285B2 (https=)
EP (1) EP4152406B1 (https=)
JP (1) JP2023044722A (https=)
CN (2) CN115841947B (https=)
IT (1) IT202100024104A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT202100024104A1 (it) * 2021-09-20 2023-03-20 Consiglio Nazionale Ricerche Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps
CN117317034A (zh) * 2023-11-28 2023-12-29 深圳平创半导体有限公司 一种碳化硅混合二极管器件、制作方法及版图结构
CN118448471A (zh) * 2024-05-23 2024-08-06 深圳市港祥辉电子有限公司 一种高压低导通电阻金刚石混合式pin二极管及其制备方法

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JP2011071281A (ja) * 2009-09-25 2011-04-07 Toyota Central R&D Labs Inc 半導体装置とその製造方法
DE102014118874B4 (de) * 2014-12-17 2025-09-18 Infineon Technologies Austria Ag Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE102017100109A1 (de) * 2017-01-04 2018-07-05 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen derselben
KR101972739B1 (ko) 2017-07-29 2019-04-25 한국표준과학연구원 반도체 소자 및 반도체 소자의 제조방법
CN109686797A (zh) * 2017-10-19 2019-04-26 株洲中车时代电气股份有限公司 一种碳化硅肖特基二极管及其制造方法
CN108231871B (zh) 2018-01-31 2023-11-03 华南理工大学 一种MoS2基量子阱型调制掺杂场效应晶体管及其制备方法
US10840385B1 (en) 2020-01-31 2020-11-17 Genesic Semiconductor Inc. Performance SiC Schottky diodes
IT202100024104A1 (it) * 2021-09-20 2023-03-20 Consiglio Nazionale Ricerche Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps

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Publication number Publication date
US20250393223A1 (en) 2025-12-25
CN219435881U (zh) 2023-07-28
IT202100024104A1 (it) 2023-03-20
CN115841947B (zh) 2026-03-31
CN115841947A (zh) 2023-03-24
EP4152406A1 (en) 2023-03-22
EP4152406C0 (en) 2024-06-26
EP4152406B1 (en) 2024-06-26
US12426285B2 (en) 2025-09-23
US20230087112A1 (en) 2023-03-23

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