IT202100024104A1 - Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps - Google Patents

Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps Download PDF

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Publication number
IT202100024104A1
IT202100024104A1 IT102021000024104A IT202100024104A IT202100024104A1 IT 202100024104 A1 IT202100024104 A1 IT 202100024104A1 IT 102021000024104 A IT102021000024104 A IT 102021000024104A IT 202100024104 A IT202100024104 A IT 202100024104A IT 202100024104 A1 IT202100024104 A1 IT 202100024104A1
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IT
Italy
Prior art keywords
region
conductivity
semiconductor layer
solid body
electric
Prior art date
Application number
IT102021000024104A
Other languages
English (en)
Italian (it)
Inventor
Filippo Giannazzo
Giuseppe Greco
Fabrizio Roccaforte
Simone Rascuna'
Original Assignee
Consiglio Nazionale Ricerche
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consiglio Nazionale Ricerche, St Microelectronics Srl filed Critical Consiglio Nazionale Ricerche
Priority to IT102021000024104A priority Critical patent/IT202100024104A1/it
Priority to EP22193143.9A priority patent/EP4152406B1/en
Priority to US17/939,842 priority patent/US12426285B2/en
Priority to JP2022144755A priority patent/JP2023044722A/ja
Priority to CN202211147481.XA priority patent/CN115841947B/zh
Priority to CN202222493103.9U priority patent/CN219435881U/zh
Publication of IT202100024104A1 publication Critical patent/IT202100024104A1/it
Priority to US19/313,293 priority patent/US20250393223A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Electrodes Of Semiconductors (AREA)
IT102021000024104A 2021-09-20 2021-09-20 Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps IT202100024104A1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT102021000024104A IT202100024104A1 (it) 2021-09-20 2021-09-20 Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps
EP22193143.9A EP4152406B1 (en) 2021-09-20 2022-08-31 Contextual formation of a jb diode and a schottky diode in a mps device, and mps device
US17/939,842 US12426285B2 (en) 2021-09-20 2022-09-07 Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device
JP2022144755A JP2023044722A (ja) 2021-09-20 2022-09-12 シリコンカーバイドに基づくｍｐｓ装置におけるｊｂダイオードとショットキーダイオードの文脈的形成及びｍｐｓ装置
CN202211147481.XA CN115841947B (zh) 2021-09-20 2022-09-19 结势垒二极管和肖特基二极管的形成以及mps器件
CN202222493103.9U CN219435881U (zh) 2021-09-20 2022-09-19 合并式PiN肖特基器件以及电子器件的结构
US19/313,293 US20250393223A1 (en) 2021-09-20 2025-08-28 Contextual formation of a junction barrier diode and a schottky diode in a mps device based on silicon carbide, and mps device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102021000024104A IT202100024104A1 (it) 2021-09-20 2021-09-20 Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps

Publications (1)

Publication Number Publication Date
IT202100024104A1 true IT202100024104A1 (it) 2023-03-20

Family

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Family Applications (1)

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IT102021000024104A IT202100024104A1 (it) 2021-09-20 2021-09-20 Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps

Country Status (5)

Country Link
US (2) US12426285B2 (https=)
EP (1) EP4152406B1 (https=)
JP (1) JP2023044722A (https=)
CN (2) CN115841947B (https=)
IT (1) IT202100024104A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT202100024104A1 (it) * 2021-09-20 2023-03-20 Consiglio Nazionale Ricerche Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps
CN117317034A (zh) * 2023-11-28 2023-12-29 深圳平创半导体有限公司 一种碳化硅混合二极管器件、制作方法及版图结构
CN118448471A (zh) * 2024-05-23 2024-08-06 深圳市港祥辉电子有限公司 一种高压低导通电阻金刚石混合式pin二极管及其制备方法

Citations (3)

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JP2011071281A (ja) * 2009-09-25 2011-04-07 Toyota Central R&D Labs Inc 半導体装置とその製造方法
US20180190651A1 (en) * 2017-01-04 2018-07-05 Infineon Technologies Ag Semiconductor Device and Corresponding Manufacturing Method
CN109686797A (zh) * 2017-10-19 2019-04-26 株洲中车时代电气股份有限公司 一种碳化硅肖特基二极管及其制造方法

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DE102014118874B4 (de) * 2014-12-17 2025-09-18 Infineon Technologies Austria Ag Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
KR101972739B1 (ko) 2017-07-29 2019-04-25 한국표준과학연구원 반도체 소자 및 반도체 소자의 제조방법
CN108231871B (zh) 2018-01-31 2023-11-03 华南理工大学 一种MoS2基量子阱型调制掺杂场效应晶体管及其制备方法
US10840385B1 (en) 2020-01-31 2020-11-17 Genesic Semiconductor Inc. Performance SiC Schottky diodes
IT202100024104A1 (it) * 2021-09-20 2023-03-20 Consiglio Nazionale Ricerche Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps

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JP2011071281A (ja) * 2009-09-25 2011-04-07 Toyota Central R&D Labs Inc 半導体装置とその製造方法
US20180190651A1 (en) * 2017-01-04 2018-07-05 Infineon Technologies Ag Semiconductor Device and Corresponding Manufacturing Method
CN109686797A (zh) * 2017-10-19 2019-04-26 株洲中车时代电气股份有限公司 一种碳化硅肖特基二极管及其制造方法

Non-Patent Citations (6)

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DRISS MOULOUA ET AL.: "Recent Progress in the Synthesis of MoS2 Thin Films for Sensing, Photovoltaic and Plasmonic Applications: A Review", MATERIALS, vol. 14, 2021, pages 3283
ISLAM, M. R. ET AL.: "Tuning the Electrical Property via Defect Engineering of Single Layer MoS by Oxygen Plasma", NANOSCALE, vol. 6, 2014, pages 10033 - 10039
KHONDAKER, S. I. ET AL.: "Bandgap Engineering of MoS Flakes via Oxygen Plasma: A Layer Dependent Study", J. PHYS. CHEM. C, vol. 120, 2016, pages 13801 - 13806
MATTEO BOSI: "Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review", RSC ADV., vol. 5, 2015, pages 75500
PIERRE BROSSELARD ET AL: "Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2-and 3.5-kV 4H-SiC JBS Diodes", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, USA, vol. 54, no. 8, 1 August 2008 (2008-08-01), pages 1847 - 1856, XP011232120, ISSN: 0018-9383 *
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Also Published As

Publication number Publication date
US20250393223A1 (en) 2025-12-25
CN219435881U (zh) 2023-07-28
CN115841947B (zh) 2026-03-31
JP2023044722A (ja) 2023-03-31
CN115841947A (zh) 2023-03-24
EP4152406A1 (en) 2023-03-22
EP4152406C0 (en) 2024-06-26
EP4152406B1 (en) 2024-06-26
US12426285B2 (en) 2025-09-23
US20230087112A1 (en) 2023-03-23

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