JP2023044722A5 - - Google Patents
Info
- Publication number
- JP2023044722A5 JP2023044722A5 JP2022144755A JP2022144755A JP2023044722A5 JP 2023044722 A5 JP2023044722 A5 JP 2023044722A5 JP 2022144755 A JP2022144755 A JP 2022144755A JP 2022144755 A JP2022144755 A JP 2022144755A JP 2023044722 A5 JP2023044722 A5 JP 2023044722A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrical conductivity
- semiconductor layer
- solid body
- front side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT102021000024104 | 2021-09-20 | ||
| IT102021000024104A IT202100024104A1 (it) | 2021-09-20 | 2021-09-20 | Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023044722A JP2023044722A (ja) | 2023-03-31 |
| JP2023044722A5 true JP2023044722A5 (https=) | 2025-09-11 |
Family
ID=78649965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022144755A Pending JP2023044722A (ja) | 2021-09-20 | 2022-09-12 | シリコンカーバイドに基づくｍｐｓ装置におけるｊｂダイオードとショットキーダイオードの文脈的形成及びｍｐｓ装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12426285B2 (https=) |
| EP (1) | EP4152406B1 (https=) |
| JP (1) | JP2023044722A (https=) |
| CN (2) | CN115841947B (https=) |
| IT (1) | IT202100024104A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT202100024104A1 (it) * | 2021-09-20 | 2023-03-20 | Consiglio Nazionale Ricerche | Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps |
| CN117317034A (zh) * | 2023-11-28 | 2023-12-29 | 深圳平创半导体有限公司 | 一种碳化硅混合二极管器件、制作方法及版图结构 |
| CN118448471A (zh) * | 2024-05-23 | 2024-08-06 | 深圳市港祥辉电子有限公司 | 一种高压低导通电阻金刚石混合式pin二极管及其制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011071281A (ja) * | 2009-09-25 | 2011-04-07 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
| DE102014118874B4 (de) * | 2014-12-17 | 2025-09-18 | Infineon Technologies Austria Ag | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
| DE102017100109A1 (de) * | 2017-01-04 | 2018-07-05 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zum herstellen derselben |
| KR101972739B1 (ko) | 2017-07-29 | 2019-04-25 | 한국표준과학연구원 | 반도체 소자 및 반도체 소자의 제조방법 |
| CN109686797A (zh) * | 2017-10-19 | 2019-04-26 | 株洲中车时代电气股份有限公司 | 一种碳化硅肖特基二极管及其制造方法 |
| CN108231871B (zh) | 2018-01-31 | 2023-11-03 | 华南理工大学 | 一种MoS2基量子阱型调制掺杂场效应晶体管及其制备方法 |
| US10840385B1 (en) | 2020-01-31 | 2020-11-17 | Genesic Semiconductor Inc. | Performance SiC Schottky diodes |
| IT202100024104A1 (it) * | 2021-09-20 | 2023-03-20 | Consiglio Nazionale Ricerche | Formazione contestuale di un diodo jb e di un diodo schottky in un dispositivo mps basato su carburo di silicio, e dispositivo mps |
-
2021
- 2021-09-20 IT IT102021000024104A patent/IT202100024104A1/it unknown
-
2022
- 2022-08-31 EP EP22193143.9A patent/EP4152406B1/en active Active
- 2022-09-07 US US17/939,842 patent/US12426285B2/en active Active
- 2022-09-12 JP JP2022144755A patent/JP2023044722A/ja active Pending
- 2022-09-19 CN CN202211147481.XA patent/CN115841947B/zh active Active
- 2022-09-19 CN CN202222493103.9U patent/CN219435881U/zh not_active Withdrawn - After Issue
-
2025
- 2025-08-28 US US19/313,293 patent/US20250393223A1/en active Pending
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