JP2023010704A5 - - Google Patents
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- Publication number
- JP2023010704A5 JP2023010704A5 JP2022167285A JP2022167285A JP2023010704A5 JP 2023010704 A5 JP2023010704 A5 JP 2023010704A5 JP 2022167285 A JP2022167285 A JP 2022167285A JP 2022167285 A JP2022167285 A JP 2022167285A JP 2023010704 A5 JP2023010704 A5 JP 2023010704A5
- Authority
- JP
- Japan
- Prior art keywords
- producing
- bromide
- processing liquid
- semiconductor processing
- liquid according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 7
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 5
- 229910052794 bromium Inorganic materials 0.000 claims 5
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 5
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims 5
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 3
- 150000007514 bases Chemical class 0.000 claims 3
- -1 hypochlorous acid compound Chemical class 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000007791 liquid phase Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019176727 | 2019-09-27 | ||
| JP2019176727 | 2019-09-27 | ||
| JP2019193081 | 2019-10-23 | ||
| JP2019193081 | 2019-10-23 | ||
| JP2019211875 | 2019-11-22 | ||
| JP2019211875 | 2019-11-22 | ||
| JP2020045869 | 2020-03-16 | ||
| JP2020045869 | 2020-03-16 | ||
| JP2020565512A JP7050184B2 (ja) | 2019-09-27 | 2020-07-08 | ルテニウムの半導体用処理液及びその製造方法 |
| JP2020201608A JP7321138B2 (ja) | 2019-09-27 | 2020-12-04 | ルテニウムの半導体用処理液及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020201608A Division JP7321138B2 (ja) | 2019-09-27 | 2020-12-04 | ルテニウムの半導体用処理液及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023010704A JP2023010704A (ja) | 2023-01-20 |
| JP2023010704A5 true JP2023010704A5 (https=) | 2023-07-13 |
| JP7573581B2 JP7573581B2 (ja) | 2024-10-25 |
Family
ID=75166537
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020565512A Active JP7050184B2 (ja) | 2019-09-27 | 2020-07-08 | ルテニウムの半導体用処理液及びその製造方法 |
| JP2020201608A Active JP7321138B2 (ja) | 2019-09-27 | 2020-12-04 | ルテニウムの半導体用処理液及びその製造方法 |
| JP2022167285A Active JP7573581B2 (ja) | 2019-09-27 | 2022-10-19 | ルテニウムの半導体用処理液及びその製造方法 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020565512A Active JP7050184B2 (ja) | 2019-09-27 | 2020-07-08 | ルテニウムの半導体用処理液及びその製造方法 |
| JP2020201608A Active JP7321138B2 (ja) | 2019-09-27 | 2020-12-04 | ルテニウムの半導体用処理液及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11674230B2 (https=) |
| EP (1) | EP4023791B1 (https=) |
| JP (3) | JP7050184B2 (https=) |
| KR (2) | KR102506715B1 (https=) |
| CN (2) | CN120060857A (https=) |
| TW (2) | TWI810469B (https=) |
| WO (1) | WO2021059666A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12509632B2 (en) * | 2020-03-31 | 2025-12-30 | Tokuyama Corporation | Treatment liquid for semiconductors and method for producing same |
| WO2022024636A1 (ja) * | 2020-07-31 | 2022-02-03 | 富士フイルム株式会社 | 薬液、薬液収容体、基板の処理方法 |
| CN116324036A (zh) * | 2020-10-16 | 2023-06-23 | 中央硝子株式会社 | 湿式蚀刻方法 |
| WO2023054233A1 (ja) * | 2021-09-30 | 2023-04-06 | 富士フイルム株式会社 | 組成物および被処理物の処理方法 |
| TW202340532A (zh) | 2022-03-31 | 2023-10-16 | 日商德山股份有限公司 | 含鎓離子之過濾用潤滑劑 |
| TW202424172A (zh) | 2022-09-29 | 2024-06-16 | 日商德山股份有限公司 | 乾式蝕刻殘渣去除液 |
| KR102877889B1 (ko) * | 2022-10-03 | 2025-10-28 | 가부시끼가이샤 도꾸야마 | 반도체용 처리액 |
| TW202526528A (zh) | 2023-09-01 | 2025-07-01 | 日商德山股份有限公司 | 半導體用處理液，及作為低毒性半導體用處理液使用之方法 |
| WO2026004729A1 (ja) * | 2024-06-28 | 2026-01-02 | 株式会社トクヤマ | 半導体用基板の処理液 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0121800B1 (ko) | 1992-05-08 | 1997-11-22 | 사또오 후미오 | 메모리 카드장치 |
| JP3122222B2 (ja) | 1992-05-08 | 2001-01-09 | 株式会社東芝 | メモリカード装置 |
| TW490756B (en) * | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
| JP3619745B2 (ja) * | 1999-12-20 | 2005-02-16 | 株式会社日立製作所 | 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法 |
| JP3585437B2 (ja) * | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| US7476290B2 (en) * | 2003-10-30 | 2009-01-13 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
| JP4867520B2 (ja) * | 2006-08-08 | 2012-02-01 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
| WO2009064745A1 (en) | 2007-11-13 | 2009-05-22 | Sachem, Inc. | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean |
| EP2514855A1 (en) * | 2009-12-17 | 2012-10-24 | Showa Denko K.K. | Composition for etching ruthenium-based metal and method for preparing same |
| US8114343B1 (en) * | 2010-12-21 | 2012-02-14 | Ecolab USA, Inc. | Corrosion inhibition of hypochlorite solutions using Zn and Ca |
| JP2014062297A (ja) | 2012-09-20 | 2014-04-10 | Toshiba Corp | 処理装置、処理液の製造方法、および電子デバイスの製造方法 |
| KR102338550B1 (ko) | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법 |
| JP6363724B2 (ja) * | 2014-10-31 | 2018-07-25 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
| EP3181726A1 (en) * | 2015-12-18 | 2017-06-21 | ATOTECH Deutschland GmbH | Etching solution for treating nonconductive plastic surfaces and process for etching nonconductive plastic surfaces |
| JP6932371B2 (ja) * | 2017-06-20 | 2021-09-08 | 日本高純度化学株式会社 | 外観保護剤及び該外観保護剤を用いて処理された金属体 |
| KR102766830B1 (ko) | 2018-01-16 | 2025-02-14 | 가부시키가이샤 도쿠야마 | 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액 |
| CN117198858A (zh) | 2018-02-05 | 2023-12-08 | 富士胶片株式会社 | 药液、药液的制造方法、基板的处理方法 |
| WO2019151144A1 (ja) | 2018-02-05 | 2019-08-08 | Jsr株式会社 | 化学機械研磨用組成物及び研磨方法 |
| WO2019151145A1 (ja) | 2018-02-05 | 2019-08-08 | Jsr株式会社 | 化学機械研磨用組成物及び研磨方法 |
| US10361092B1 (en) * | 2018-02-23 | 2019-07-23 | Lam Research Corporation | Etching features using metal passivation |
-
2020
- 2020-07-08 CN CN202510195151.5A patent/CN120060857A/zh active Pending
- 2020-07-08 CN CN202080068032.9A patent/CN114466951B/zh active Active
- 2020-07-08 TW TW109123007A patent/TWI810469B/zh active
- 2020-07-08 WO PCT/JP2020/026635 patent/WO2021059666A1/ja not_active Ceased
- 2020-07-08 US US17/261,387 patent/US11674230B2/en active Active
- 2020-07-08 EP EP20867042.2A patent/EP4023791B1/en active Active
- 2020-07-08 KR KR1020227008998A patent/KR102506715B1/ko active Active
- 2020-07-08 TW TW112127687A patent/TW202346644A/zh unknown
- 2020-07-08 KR KR1020227039623A patent/KR102784165B1/ko active Active
- 2020-07-08 JP JP2020565512A patent/JP7050184B2/ja active Active
- 2020-12-04 JP JP2020201608A patent/JP7321138B2/ja active Active
-
2022
- 2022-10-19 JP JP2022167285A patent/JP7573581B2/ja active Active
-
2023
- 2023-04-26 US US18/139,559 patent/US12247299B2/en active Active
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