JP7050184B2 - ルテニウムの半導体用処理液及びその製造方法 - Google Patents

ルテニウムの半導体用処理液及びその製造方法 Download PDF

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Publication number
JP7050184B2
JP7050184B2 JP2020565512A JP2020565512A JP7050184B2 JP 7050184 B2 JP7050184 B2 JP 7050184B2 JP 2020565512 A JP2020565512 A JP 2020565512A JP 2020565512 A JP2020565512 A JP 2020565512A JP 7050184 B2 JP7050184 B2 JP 7050184B2
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Prior art keywords
treatment liquid
ruthenium
bromine
mass
containing compound
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JP2020565512A
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Japanese (ja)
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JPWO2021059666A1 (ja
Inventor
伴光 佐藤
由樹 吉川
享史 下田
貴幸 根岸
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Tokuyama Corp
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Tokuyama Corp
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Priority to JP2020201608A priority Critical patent/JP7321138B2/ja
Publication of JPWO2021059666A1 publication Critical patent/JPWO2021059666A1/ja
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Priority to JP2022167285A priority patent/JP7573581B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2020565512A 2019-09-27 2020-07-08 ルテニウムの半導体用処理液及びその製造方法 Active JP7050184B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020201608A JP7321138B2 (ja) 2019-09-27 2020-12-04 ルテニウムの半導体用処理液及びその製造方法
JP2022167285A JP7573581B2 (ja) 2019-09-27 2022-10-19 ルテニウムの半導体用処理液及びその製造方法

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2019176727 2019-09-27
JP2019176727 2019-09-27
JP2019193081 2019-10-23
JP2019193081 2019-10-23
JP2019211875 2019-11-22
JP2019211875 2019-11-22
JP2020045869 2020-03-16
JP2020045869 2020-03-16
PCT/JP2020/026635 WO2021059666A1 (ja) 2019-09-27 2020-07-08 ルテニウムの半導体用処理液及びその製造方法

Related Child Applications (1)

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JP2020201608A Division JP7321138B2 (ja) 2019-09-27 2020-12-04 ルテニウムの半導体用処理液及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2021059666A1 JPWO2021059666A1 (ja) 2021-12-02
JP7050184B2 true JP7050184B2 (ja) 2022-04-07

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JP2020565512A Active JP7050184B2 (ja) 2019-09-27 2020-07-08 ルテニウムの半導体用処理液及びその製造方法
JP2020201608A Active JP7321138B2 (ja) 2019-09-27 2020-12-04 ルテニウムの半導体用処理液及びその製造方法
JP2022167285A Active JP7573581B2 (ja) 2019-09-27 2022-10-19 ルテニウムの半導体用処理液及びその製造方法

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JP2020201608A Active JP7321138B2 (ja) 2019-09-27 2020-12-04 ルテニウムの半導体用処理液及びその製造方法
JP2022167285A Active JP7573581B2 (ja) 2019-09-27 2022-10-19 ルテニウムの半導体用処理液及びその製造方法

Country Status (7)

Country Link
US (2) US11674230B2 (https=)
EP (1) EP4023791B1 (https=)
JP (3) JP7050184B2 (https=)
KR (2) KR102506715B1 (https=)
CN (2) CN120060857A (https=)
TW (2) TWI810469B (https=)
WO (1) WO2021059666A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12509632B2 (en) * 2020-03-31 2025-12-30 Tokuyama Corporation Treatment liquid for semiconductors and method for producing same
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
CN116324036A (zh) * 2020-10-16 2023-06-23 中央硝子株式会社 湿式蚀刻方法
WO2023054233A1 (ja) * 2021-09-30 2023-04-06 富士フイルム株式会社 組成物および被処理物の処理方法
TW202340532A (zh) 2022-03-31 2023-10-16 日商德山股份有限公司 含鎓離子之過濾用潤滑劑
TW202424172A (zh) 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
KR102877889B1 (ko) * 2022-10-03 2025-10-28 가부시끼가이샤 도꾸야마 반도체용 처리액
TW202526528A (zh) 2023-09-01 2025-07-01 日商德山股份有限公司 半導體用處理液，及作為低毒性半導體用處理液使用之方法
WO2026004729A1 (ja) * 2024-06-28 2026-01-02 株式会社トクヤマ 半導体用基板の処理液

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002161381A (ja) 2000-11-22 2002-06-04 Ebara Corp ルテニウム膜のエッチング方法
JP2008042014A (ja) 2006-08-08 2008-02-21 Tosoh Corp エッチング用組成物及びエッチング方法
JP2011503326A (ja) 2007-11-13 2011-01-27 サッチェム，インコーポレイテッド 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法
WO2011074601A1 (ja) 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP2014062297A (ja) 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
WO2019150990A1 (ja) 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法

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KR0121800B1 (ko) 1992-05-08 1997-11-22 사또오 후미오 메모리 카드장치
JP3122222B2 (ja) 1992-05-08 2001-01-09 株式会社東芝 メモリカード装置
TW490756B (en) * 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
JP3619745B2 (ja) * 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
US7476290B2 (en) * 2003-10-30 2009-01-13 Ebara Corporation Substrate processing apparatus and substrate processing method
US8114343B1 (en) * 2010-12-21 2012-02-14 Ecolab USA, Inc. Corrosion inhibition of hypochlorite solutions using Zn and Ca
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
JP6363724B2 (ja) * 2014-10-31 2018-07-25 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
EP3181726A1 (en) * 2015-12-18 2017-06-21 ATOTECH Deutschland GmbH Etching solution for treating nonconductive plastic surfaces and process for etching nonconductive plastic surfaces
JP6932371B2 (ja) * 2017-06-20 2021-09-08 日本高純度化学株式会社 外観保護剤及び該外観保護剤を用いて処理された金属体
KR102766830B1 (ko) 2018-01-16 2025-02-14 가부시키가이샤 도쿠야마 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
WO2019151144A1 (ja) 2018-02-05 2019-08-08 Jsr株式会社 化学機械研磨用組成物及び研磨方法
WO2019151145A1 (ja) 2018-02-05 2019-08-08 Jsr株式会社 化学機械研磨用組成物及び研磨方法
US10361092B1 (en) * 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation

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Publication number Priority date Publication date Assignee Title
JP2002161381A (ja) 2000-11-22 2002-06-04 Ebara Corp ルテニウム膜のエッチング方法
JP2008042014A (ja) 2006-08-08 2008-02-21 Tosoh Corp エッチング用組成物及びエッチング方法
JP2011503326A (ja) 2007-11-13 2011-01-27 サッチェム，インコーポレイテッド 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法
WO2011074601A1 (ja) 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP2014062297A (ja) 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
WO2019150990A1 (ja) 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法

Also Published As

Publication number Publication date
KR20220054815A (ko) 2022-05-03
KR102784165B1 (ko) 2025-03-19
CN114466951A (zh) 2022-05-10
KR102506715B1 (ko) 2023-03-06
US11674230B2 (en) 2023-06-13
CN114466951B (zh) 2025-02-28
TWI810469B (zh) 2023-08-01
US12247299B2 (en) 2025-03-11
JP2021184454A (ja) 2021-12-02
US20210388508A1 (en) 2021-12-16
TW202346644A (zh) 2023-12-01
EP4023791B1 (en) 2023-10-11
TW202129079A (zh) 2021-08-01
KR20220158844A (ko) 2022-12-01
US20230257887A1 (en) 2023-08-17
WO2021059666A1 (ja) 2021-04-01
JP2023010704A (ja) 2023-01-20
EP4023791A4 (en) 2022-11-02
EP4023791A1 (en) 2022-07-06
CN120060857A (zh) 2025-05-30
JP7321138B2 (ja) 2023-08-04
JP7573581B2 (ja) 2024-10-25
JPWO2021059666A1 (ja) 2021-12-02

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