TWI810469B - 釕的半導體用處理液及其製造方法 - Google Patents

釕的半導體用處理液及其製造方法 Download PDF

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Publication number
TWI810469B
TWI810469B TW109123007A TW109123007A TWI810469B TW I810469 B TWI810469 B TW I810469B TW 109123007 A TW109123007 A TW 109123007A TW 109123007 A TW109123007 A TW 109123007A TW I810469 B TWI810469 B TW I810469B
Authority
TW
Taiwan
Prior art keywords
ruthenium
treatment liquid
bromine
bromide
oxidizing agent
Prior art date
Application number
TW109123007A
Other languages
English (en)
Chinese (zh)
Other versions
TW202129079A (zh
Inventor
佐藤伴光
吉川由樹
下田享史
根岸貴幸
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202129079A publication Critical patent/TW202129079A/zh
Application granted granted Critical
Publication of TWI810469B publication Critical patent/TWI810469B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW109123007A 2019-09-27 2020-07-08 釕的半導體用處理液及其製造方法 TWI810469B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2019176727 2019-09-27
JP2019-176727 2019-09-27
JP2019-193081 2019-10-23
JP2019193081 2019-10-23
JP2019-211875 2019-11-22
JP2019211875 2019-11-22
JP2020045869 2020-03-16
JP2020-045869 2020-03-16

Publications (2)

Publication Number Publication Date
TW202129079A TW202129079A (zh) 2021-08-01
TWI810469B true TWI810469B (zh) 2023-08-01

Family

ID=75166537

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109123007A TWI810469B (zh) 2019-09-27 2020-07-08 釕的半導體用處理液及其製造方法
TW112127687A TW202346644A (zh) 2019-09-27 2020-07-08 釕的半導體用處理液及其製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112127687A TW202346644A (zh) 2019-09-27 2020-07-08 釕的半導體用處理液及其製造方法

Country Status (7)

Country Link
US (2) US11674230B2 (https=)
EP (1) EP4023791B1 (https=)
JP (3) JP7050184B2 (https=)
KR (2) KR102506715B1 (https=)
CN (2) CN120060857A (https=)
TW (2) TWI810469B (https=)
WO (1) WO2021059666A1 (https=)

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* Cited by examiner, † Cited by third party
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US12509632B2 (en) * 2020-03-31 2025-12-30 Tokuyama Corporation Treatment liquid for semiconductors and method for producing same
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
CN116324036A (zh) * 2020-10-16 2023-06-23 中央硝子株式会社 湿式蚀刻方法
WO2023054233A1 (ja) * 2021-09-30 2023-04-06 富士フイルム株式会社 組成物および被処理物の処理方法
TW202340532A (zh) 2022-03-31 2023-10-16 日商德山股份有限公司 含鎓離子之過濾用潤滑劑
TW202424172A (zh) 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
KR102877889B1 (ko) * 2022-10-03 2025-10-28 가부시끼가이샤 도꾸야마 반도체용 처리액
TW202526528A (zh) 2023-09-01 2025-07-01 日商德山股份有限公司 半導體用處理液，及作為低毒性半導體用處理液使用之方法
WO2026004729A1 (ja) * 2024-06-28 2026-01-02 株式会社トクヤマ 半導体用基板の処理液

Citations (1)

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TW201144484A (en) * 2009-12-17 2011-12-16 Showa Denko Kk Composition for etching ruthenium-based metal and method for preparing same

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Also Published As

Publication number Publication date
KR20220054815A (ko) 2022-05-03
KR102784165B1 (ko) 2025-03-19
CN114466951A (zh) 2022-05-10
KR102506715B1 (ko) 2023-03-06
US11674230B2 (en) 2023-06-13
CN114466951B (zh) 2025-02-28
US12247299B2 (en) 2025-03-11
JP2021184454A (ja) 2021-12-02
US20210388508A1 (en) 2021-12-16
TW202346644A (zh) 2023-12-01
EP4023791B1 (en) 2023-10-11
TW202129079A (zh) 2021-08-01
KR20220158844A (ko) 2022-12-01
US20230257887A1 (en) 2023-08-17
WO2021059666A1 (ja) 2021-04-01
JP2023010704A (ja) 2023-01-20
EP4023791A4 (en) 2022-11-02
EP4023791A1 (en) 2022-07-06
CN120060857A (zh) 2025-05-30
JP7050184B2 (ja) 2022-04-07
JP7321138B2 (ja) 2023-08-04
JP7573581B2 (ja) 2024-10-25
JPWO2021059666A1 (ja) 2021-12-02

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