CN120060857A - 钌的半导体用处理液及其制造方法 - Google Patents

钌的半导体用处理液及其制造方法 Download PDF

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Publication number
CN120060857A
CN120060857A CN202510195151.5A CN202510195151A CN120060857A CN 120060857 A CN120060857 A CN 120060857A CN 202510195151 A CN202510195151 A CN 202510195151A CN 120060857 A CN120060857 A CN 120060857A
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CN
China
Prior art keywords
ruthenium
treatment liquid
bromine
processing liquid
semiconductor processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202510195151.5A
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English (en)
Chinese (zh)
Inventor
佐藤伴光
吉川由树
下田享史
根岸贵幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of CN120060857A publication Critical patent/CN120060857A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CN202510195151.5A 2019-09-27 2020-07-08 钌的半导体用处理液及其制造方法 Pending CN120060857A (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2019176727 2019-09-27
JP2019-176727 2019-09-27
JP2019-193081 2019-10-23
JP2019193081 2019-10-23
JP2019-211875 2019-11-22
JP2019211875 2019-11-22
JP2020045869 2020-03-16
JP2020-045869 2020-03-16
CN202080068032.9A CN114466951B (zh) 2019-09-27 2020-07-08 钌的半导体用处理液及其制造方法
PCT/JP2020/026635 WO2021059666A1 (ja) 2019-09-27 2020-07-08 ルテニウムの半導体用処理液及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202080068032.9A Division CN114466951B (zh) 2019-09-27 2020-07-08 钌的半导体用处理液及其制造方法

Publications (1)

Publication Number Publication Date
CN120060857A true CN120060857A (zh) 2025-05-30

Family

ID=75166537

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202510195151.5A Pending CN120060857A (zh) 2019-09-27 2020-07-08 钌的半导体用处理液及其制造方法
CN202080068032.9A Active CN114466951B (zh) 2019-09-27 2020-07-08 钌的半导体用处理液及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202080068032.9A Active CN114466951B (zh) 2019-09-27 2020-07-08 钌的半导体用处理液及其制造方法

Country Status (7)

Country Link
US (2) US11674230B2 (https=)
EP (1) EP4023791B1 (https=)
JP (3) JP7050184B2 (https=)
KR (2) KR102506715B1 (https=)
CN (2) CN120060857A (https=)
TW (2) TWI810469B (https=)
WO (1) WO2021059666A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12509632B2 (en) * 2020-03-31 2025-12-30 Tokuyama Corporation Treatment liquid for semiconductors and method for producing same
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
CN116324036A (zh) * 2020-10-16 2023-06-23 中央硝子株式会社 湿式蚀刻方法
WO2023054233A1 (ja) * 2021-09-30 2023-04-06 富士フイルム株式会社 組成物および被処理物の処理方法
TW202340532A (zh) 2022-03-31 2023-10-16 日商德山股份有限公司 含鎓離子之過濾用潤滑劑
TW202424172A (zh) 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
KR102877889B1 (ko) * 2022-10-03 2025-10-28 가부시끼가이샤 도꾸야마 반도체용 처리액
TW202526528A (zh) 2023-09-01 2025-07-01 日商德山股份有限公司 半導體用處理液，及作為低毒性半導體用處理液使用之方法
WO2026004729A1 (ja) * 2024-06-28 2026-01-02 株式会社トクヤマ 半導体用基板の処理液

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KR0121800B1 (ko) 1992-05-08 1997-11-22 사또오 후미오 메모리 카드장치
JP3122222B2 (ja) 1992-05-08 2001-01-09 株式会社東芝 メモリカード装置
TW490756B (en) * 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
JP3619745B2 (ja) * 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP3585437B2 (ja) * 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
US7476290B2 (en) * 2003-10-30 2009-01-13 Ebara Corporation Substrate processing apparatus and substrate processing method
JP4867520B2 (ja) * 2006-08-08 2012-02-01 東ソー株式会社 エッチング用組成物及びエッチング方法
WO2009064745A1 (en) 2007-11-13 2009-05-22 Sachem, Inc. High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean
EP2514855A1 (en) * 2009-12-17 2012-10-24 Showa Denko K.K. Composition for etching ruthenium-based metal and method for preparing same
US8114343B1 (en) * 2010-12-21 2012-02-14 Ecolab USA, Inc. Corrosion inhibition of hypochlorite solutions using Zn and Ca
JP2014062297A (ja) 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
JP6363724B2 (ja) * 2014-10-31 2018-07-25 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
EP3181726A1 (en) * 2015-12-18 2017-06-21 ATOTECH Deutschland GmbH Etching solution for treating nonconductive plastic surfaces and process for etching nonconductive plastic surfaces
JP6932371B2 (ja) * 2017-06-20 2021-09-08 日本高純度化学株式会社 外観保護剤及び該外観保護剤を用いて処理された金属体
KR102766830B1 (ko) 2018-01-16 2025-02-14 가부시키가이샤 도쿠야마 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
CN117198858A (zh) 2018-02-05 2023-12-08 富士胶片株式会社 药液、药液的制造方法、基板的处理方法
WO2019151144A1 (ja) 2018-02-05 2019-08-08 Jsr株式会社 化学機械研磨用組成物及び研磨方法
WO2019151145A1 (ja) 2018-02-05 2019-08-08 Jsr株式会社 化学機械研磨用組成物及び研磨方法
US10361092B1 (en) * 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation

Also Published As

Publication number Publication date
KR20220054815A (ko) 2022-05-03
KR102784165B1 (ko) 2025-03-19
CN114466951A (zh) 2022-05-10
KR102506715B1 (ko) 2023-03-06
US11674230B2 (en) 2023-06-13
CN114466951B (zh) 2025-02-28
TWI810469B (zh) 2023-08-01
US12247299B2 (en) 2025-03-11
JP2021184454A (ja) 2021-12-02
US20210388508A1 (en) 2021-12-16
TW202346644A (zh) 2023-12-01
EP4023791B1 (en) 2023-10-11
TW202129079A (zh) 2021-08-01
KR20220158844A (ko) 2022-12-01
US20230257887A1 (en) 2023-08-17
WO2021059666A1 (ja) 2021-04-01
JP2023010704A (ja) 2023-01-20
EP4023791A4 (en) 2022-11-02
EP4023791A1 (en) 2022-07-06
JP7050184B2 (ja) 2022-04-07
JP7321138B2 (ja) 2023-08-04
JP7573581B2 (ja) 2024-10-25
JPWO2021059666A1 (ja) 2021-12-02

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