JP2023007341A - チャンバ内部処理方法及び基板処理方法 - Google Patents
チャンバ内部処理方法及び基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 178
- 238000003672 processing method Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims description 30
- 238000004148 unit process Methods 0.000 claims description 22
- 230000003247 decreasing effect Effects 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 239000006227 byproduct Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000356 contaminant Substances 0.000 abstract description 8
- 238000007740 vapor deposition Methods 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000011194 food seasoning agent Nutrition 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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Abstract
Description
これにより、処理される基板に不純物が付着して基板処理の完成度が低下するという問題があった。
P2 第2の圧力
T1 第1の温度
T2 処理温度
T3 第2の温度
Claims (20)
- 基板処理が行われるチャンバ内部を処理するチャンバ内部処理方法であって、
加圧ガスを用いて前記チャンバ内の圧力を大気圧よりも高い第1の圧力に上昇させる加圧ステップと、
前記加圧ステップの後に、前記チャンバ内の圧力を前記第1の圧力から第2の圧力に下降させる減圧ステップと、
を含み、
前記加圧ステップ及び前記減圧ステップは、
前記チャンバ内部に処理対象基板が除去された状態で行われることを特徴とするチャンバ内部処理方法。 - 前記第2の圧力は、大気圧よりも低い圧力であることを特徴とする請求項1に記載のチャンバ内部処理方法。
- 前記加圧ステップと前記減圧ステップを、一つの単位サイクルとして、n回(n≧1)行うことを特徴とする請求項1に記載のチャンバ内部処理方法。
- 前記加圧ガスは、水素(H2)ガスであることを特徴とする請求項1に記載のチャンバ内部処理方法。
- 前記加圧ステップは、
チャンバ内壁及び前記チャンバ内に設けられる内部材の表面に、前記加圧ガスの構成物質の一部又は全部を結合させ、前記チャンバ内壁及び前記チャンバ内に設けられる内部材の表面をコーティングすることを特徴とする請求項4に記載のチャンバ内部処理方法。 - 前記チャンバ及び前記チャンバ内に設けられる内部材の少なくとも一つは、石英材質を含むことを特徴とする請求項5に記載のチャンバ内部処理方法。
- 前記チャンバ内に設けられる内部材は、
前記チャンバ内外を移動できるように設けられ、少なくとも一つのダミー基板を支持する基板支持部を含むことを特徴とする請求項5に記載のチャンバ内部処理方法。 - 前記加圧ステップは、前記加圧ガスが前記チャンバ内壁及び前記チャンバ内に設けられる内部材の少なくとも一つの表面又は内部で不純物と反応して副産物を形成し、
前記減圧ステップは、前記副産物をチャンバ外部に排出することを特徴とする請求項1に記載のチャンバ内部処理方法。 - 前記加圧ステップの前に、前記チャンバ内部に対する処理必要性を判断する処理可否判断ステップを、さらに含むことを特徴とする請求項1に記載のチャンバ内部処理方法。
- 前記処理可否判断ステップは、
前記チャンバ内で処理が完了した基板に対する面抵抗を測定し、
該測定値が予め設定された値以上の場合、加圧ステップが行われるように決定することを特徴とする請求項9に記載のチャンバ内部処理方法。 - 前記加圧ステップは、
前記チャンバ内の圧力を前記第1の圧力に上昇させる圧力上昇ステップと、前記圧力上昇ステップの後に、前記チャンバ内の圧力を前記第1の圧力に一定時間維持する高圧維持ステップと、を含むことを特徴とする請求項1に記載のチャンバ内部処理方法。 - 前記チャンバ内の温度を第1の温度から室温よりも高い処理温度T2に上昇させる昇温ステップと、前記処理温度を維持する高温維持ステップと、前記チャンバ内の温度を処理温度から第2の温度に下降させる減温ステップと、を含み、
前記加圧ステップ及び前記減圧ステップは、
一つの単位サイクルとして、n回(n≧1)行われ、少なくとも一つの単位サイクルは、前記高温維持ステップ中に行われることを特徴とする請求項1に記載のチャンバ内部処理方法。 - 前記チャンバ内の温度を第1の温度から室温よりも高い処理温度に上昇させる昇温ステップと、前記チャンバ内の温度を処理温度から第2の温度に下降させる減温ステップと、を含み、
前記昇温ステップ又は前記減温ステップは、前記高圧維持ステップ中に行われることを特徴とする請求項11に記載のチャンバ内部処理方法。 - 前記加圧ステップと前記減圧ステップを一つの単位サイクルとするとき、n回(n≧2)の単位サイクルが繰り返され、
前記減温ステップは、
n回目の加圧ステップの高圧維持ステップ中に行われることを特徴とする請求項13に記載のチャンバ内部処理方法。 - 基板処理が行われる前記チャンバ内部を処理する請求項1~14のいずれか1項に記載のチャンバ内部処理方法によるチャンバ内部処理ステップと、
前記チャンバ内部処理ステップの後に、処理対象基板を前記チャンバに導入する基板導入ステップと、
前記チャンバ内に配置される基板に対する基板処理を行う基板処理ステップと、
前記基板処理ステップを介して処理完了された基板を搬出する基板搬出ステップと、
を含み、
前記基板導入ステップ、基板処理ステップ及び基板搬出ステップは、一つの単位工程として、n回(n≧2)繰り返されることを特徴とする基板処理方法。 - 前記チャンバ内部処理ステップは、
単位工程と単位工程と間又は最初単位工程の前に行われることを特徴とする請求項15に記載の基板処理方法。 - 前記チャンバ内部処理ステップは、単位工程と単位工程との間に行われ、
前記単位工程の実施後に、前記チャンバ内部に対する処理必要性を判断する処理可否判断ステップを、さらに含むことを特徴とする請求項15に記載の基板処理方法。 - 前記処理可否判断ステップは、
処理が完了した基板に対する面抵抗を測定し、該測定値が予め設定された値以上の場合、前記チャンバ内部処理ステップが行われ、該測定値が予め設定された値未満の場合、前記単位工程が行われるようにすることを特徴とする請求項17に記載の基板処理方法。 - 前記基板処理ステップは、
前記チャンバ内の圧力を大気圧よりも高い圧力に上昇させる基板処理加圧ステップと、前記基板処理加圧ステップの後に、前記チャンバ内の圧力を下降させる基板処理減圧ステップと、を含むことを特徴とする請求項15に記載の基板処理方法。 - 前記基板処理減圧ステップは、前記チャンバ内の圧力を大気圧よりも低い圧力に下降させ、
前記基板処理加圧ステップ及び前記基板処理減圧ステップは、複数回繰り返されることを特徴とする請求項19に記載の基板処理方法。
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