JP2022544673A5 - - Google Patents
Info
- Publication number
- JP2022544673A5 JP2022544673A5 JP2022509590A JP2022509590A JP2022544673A5 JP 2022544673 A5 JP2022544673 A5 JP 2022544673A5 JP 2022509590 A JP2022509590 A JP 2022509590A JP 2022509590 A JP2022509590 A JP 2022509590A JP 2022544673 A5 JP2022544673 A5 JP 2022544673A5
- Authority
- JP
- Japan
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962890285P | 2019-08-22 | 2019-08-22 | |
| US62/890,285 | 2019-08-22 | ||
| US201962909781P | 2019-10-03 | 2019-10-03 | |
| US62/909,781 | 2019-10-03 | ||
| PCT/US2020/047370 WO2021035132A1 (en) | 2019-08-22 | 2020-08-21 | Multi-state rf pulsing to control mask shape and breaking selectivity versus process margin trade-off |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022544673A JP2022544673A (ja) | 2022-10-20 |
| JP2022544673A5 true JP2022544673A5 (https=) | 2023-08-04 |
| JPWO2021035132A5 JPWO2021035132A5 (https=) | 2023-08-04 |
| JP7562637B2 JP7562637B2 (ja) | 2024-10-07 |
Family
ID=74660375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022509590A Active JP7562637B2 (ja) | 2019-08-22 | 2020-08-21 | マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12322571B2 (https=) |
| JP (1) | JP7562637B2 (https=) |
| KR (1) | KR20220044845A (https=) |
| CN (1) | CN114342049B (https=) |
| WO (1) | WO2021035132A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023278171A1 (en) * | 2021-06-29 | 2023-01-05 | Lam Research Corporation | Multiple state pulsing for high aspect ratio etch |
| US20240242935A1 (en) * | 2021-09-09 | 2024-07-18 | Lam Research Corporation | Multi-state rf pulsing in cycling recipes to reduce charging induced defects |
| US11987879B2 (en) * | 2022-02-16 | 2024-05-21 | Applied Materials, Inc. | High aspect ratio taper improvement using directional deposition |
| KR102916927B1 (ko) * | 2022-04-13 | 2026-01-23 | 주식회사 히타치하이테크 | 플라스마 처리 방법 및 플라스마 처리 디바이스 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11224796A (ja) * | 1998-02-05 | 1999-08-17 | Matsushita Electron Corp | プラズマ処理装置及びプラズマ処理方法 |
| US9123509B2 (en) * | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| JP5172417B2 (ja) * | 2008-03-27 | 2013-03-27 | Ｓｐｐテクノロジーズ株式会社 | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |
| US8382999B2 (en) * | 2009-03-26 | 2013-02-26 | Applied Materials, Inc. | Pulsed plasma high aspect ratio dielectric process |
| JP5395491B2 (ja) * | 2009-03-31 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US8987140B2 (en) * | 2011-04-25 | 2015-03-24 | Applied Materials, Inc. | Methods for etching through-silicon vias with tunable profile angles |
| US8883028B2 (en) | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
| US9462672B2 (en) * | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| CN103915308B (zh) * | 2012-12-31 | 2016-06-29 | 中微半导体设备(上海)有限公司 | 一种双射频脉冲等离子体的刻蚀方法及其刻蚀装置 |
| KR101745686B1 (ko) | 2014-07-10 | 2017-06-12 | 도쿄엘렉트론가부시키가이샤 | 기판의 고정밀 에칭을 위한 방법 |
| JP6670692B2 (ja) * | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US9754767B2 (en) * | 2015-10-13 | 2017-09-05 | Applied Materials, Inc. | RF pulse reflection reduction for processing substrates |
| US9767991B2 (en) * | 2015-11-04 | 2017-09-19 | Lam Research Corporation | Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication |
| JP7175239B2 (ja) * | 2018-06-22 | 2022-11-18 | 東京エレクトロン株式会社 | 制御方法、プラズマ処理装置、プログラム及び記憶媒体 |
| US10593518B1 (en) * | 2019-02-08 | 2020-03-17 | Applied Materials, Inc. | Methods and apparatus for etching semiconductor structures |
| WO2021118862A2 (en) * | 2019-12-13 | 2021-06-17 | Lam Research Corporation | Multi-state pulsing for achieving a balance between bow control and mask selectivity |
| US11545364B2 (en) * | 2020-08-24 | 2023-01-03 | Tokyo Electron Limited | Pulsed capacitively coupled plasma processes |
| WO2023278171A1 (en) * | 2021-06-29 | 2023-01-05 | Lam Research Corporation | Multiple state pulsing for high aspect ratio etch |
-
2020
- 2020-08-21 CN CN202080059513.3A patent/CN114342049B/zh active Active
- 2020-08-21 KR KR1020227009367A patent/KR20220044845A/ko active Pending
- 2020-08-21 JP JP2022509590A patent/JP7562637B2/ja active Active
- 2020-08-21 WO PCT/US2020/047370 patent/WO2021035132A1/en not_active Ceased
- 2020-08-21 US US17/634,547 patent/US12322571B2/en active Active
-
2025
- 2025-05-06 US US19/200,293 patent/US20250349514A1/en active Pending