KR20220044845A - 마스크 형상을 제어하고 선택도 대 프로세스 마진 트레이드 오프를 파괴하기 위한 멀티-상태 rf 펄싱 - Google Patents

마스크 형상을 제어하고 선택도 대 프로세스 마진 트레이드 오프를 파괴하기 위한 멀티-상태 rf 펄싱 Download PDF

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KR20220044845A
KR20220044845A KR1020227009367A KR20227009367A KR20220044845A KR 20220044845 A KR20220044845 A KR 20220044845A KR 1020227009367 A KR1020227009367 A KR 1020227009367A KR 20227009367 A KR20227009367 A KR 20227009367A KR 20220044845 A KR20220044845 A KR 20220044845A
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Korean (ko)
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닉힐 돌
비크람 빌라수르 스와미나탄
베이베이 지앙
메르트 웡
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H01L21/31116—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/31144—
    • H01L21/67069—
    • H01L27/10852—
    • H01L27/11556—
    • H01L27/11582—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
KR1020227009367A 2019-08-22 2020-08-21 마스크 형상을 제어하고 선택도 대 프로세스 마진 트레이드 오프를 파괴하기 위한 멀티-상태 rf 펄싱 Pending KR20220044845A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962890285P 2019-08-22 2019-08-22
US62/890,285 2019-08-22
US201962909781P 2019-10-03 2019-10-03
US62/909,781 2019-10-03
PCT/US2020/047370 WO2021035132A1 (en) 2019-08-22 2020-08-21 Multi-state rf pulsing to control mask shape and breaking selectivity versus process margin trade-off

Publications (1)

Publication Number Publication Date
KR20220044845A true KR20220044845A (ko) 2022-04-11

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Application Number Title Priority Date Filing Date
KR1020227009367A Pending KR20220044845A (ko) 2019-08-22 2020-08-21 마스크 형상을 제어하고 선택도 대 프로세스 마진 트레이드 오프를 파괴하기 위한 멀티-상태 rf 펄싱

Country Status (5)

Country Link
US (2) US12322571B2 (https=)
JP (1) JP7562637B2 (https=)
KR (1) KR20220044845A (https=)
CN (1) CN114342049B (https=)
WO (1) WO2021035132A1 (https=)

Cited By (1)

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KR20230147594A (ko) * 2022-04-13 2023-10-23 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 디바이스

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023278171A1 (en) * 2021-06-29 2023-01-05 Lam Research Corporation Multiple state pulsing for high aspect ratio etch
US20240242935A1 (en) * 2021-09-09 2024-07-18 Lam Research Corporation Multi-state rf pulsing in cycling recipes to reduce charging induced defects
US11987879B2 (en) * 2022-02-16 2024-05-21 Applied Materials, Inc. High aspect ratio taper improvement using directional deposition

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JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
JP5172417B2 (ja) * 2008-03-27 2013-03-27 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
US8382999B2 (en) * 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5395491B2 (ja) * 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US8987140B2 (en) * 2011-04-25 2015-03-24 Applied Materials, Inc. Methods for etching through-silicon vias with tunable profile angles
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
CN103915308B (zh) * 2012-12-31 2016-06-29 中微半导体设备(上海)有限公司 一种双射频脉冲等离子体的刻蚀方法及其刻蚀装置
KR101745686B1 (ko) 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
JP6670692B2 (ja) * 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US9754767B2 (en) * 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9767991B2 (en) * 2015-11-04 2017-09-19 Lam Research Corporation Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
WO2021118862A2 (en) * 2019-12-13 2021-06-17 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
US11545364B2 (en) * 2020-08-24 2023-01-03 Tokyo Electron Limited Pulsed capacitively coupled plasma processes
WO2023278171A1 (en) * 2021-06-29 2023-01-05 Lam Research Corporation Multiple state pulsing for high aspect ratio etch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230147594A (ko) * 2022-04-13 2023-10-23 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 디바이스

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JP7562637B2 (ja) 2024-10-07
US12322571B2 (en) 2025-06-03
CN114342049A (zh) 2022-04-12
WO2021035132A1 (en) 2021-02-25
US20220285130A1 (en) 2022-09-08
US20250349514A1 (en) 2025-11-13
CN114342049B (zh) 2025-08-19
JP2022544673A (ja) 2022-10-20

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