JP7562637B2 - マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス - Google Patents

マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス Download PDF

Info

Publication number
JP7562637B2
JP7562637B2 JP2022509590A JP2022509590A JP7562637B2 JP 7562637 B2 JP7562637 B2 JP 7562637B2 JP 2022509590 A JP2022509590 A JP 2022509590A JP 2022509590 A JP2022509590 A JP 2022509590A JP 7562637 B2 JP7562637 B2 JP 7562637B2
Authority
JP
Japan
Prior art keywords
state
power
source
bias
power level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022509590A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022544673A5 (https=
JPWO2021035132A5 (https=
JP2022544673A (ja
Inventor
ドール・ニキル
スワミナザン・ヴィクラン・ヴィラサー
チアン・ベイベイ
ウォン・メレット
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2022544673A publication Critical patent/JP2022544673A/ja
Publication of JP2022544673A5 publication Critical patent/JP2022544673A5/ja
Publication of JPWO2021035132A5 publication Critical patent/JPWO2021035132A5/ja
Application granted granted Critical
Publication of JP7562637B2 publication Critical patent/JP7562637B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
JP2022509590A 2019-08-22 2020-08-21 マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス Active JP7562637B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962890285P 2019-08-22 2019-08-22
US62/890,285 2019-08-22
US201962909781P 2019-10-03 2019-10-03
US62/909,781 2019-10-03
PCT/US2020/047370 WO2021035132A1 (en) 2019-08-22 2020-08-21 Multi-state rf pulsing to control mask shape and breaking selectivity versus process margin trade-off

Publications (4)

Publication Number Publication Date
JP2022544673A JP2022544673A (ja) 2022-10-20
JP2022544673A5 JP2022544673A5 (https=) 2023-08-04
JPWO2021035132A5 JPWO2021035132A5 (https=) 2023-08-04
JP7562637B2 true JP7562637B2 (ja) 2024-10-07

Family

ID=74660375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022509590A Active JP7562637B2 (ja) 2019-08-22 2020-08-21 マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス

Country Status (5)

Country Link
US (2) US12322571B2 (https=)
JP (1) JP7562637B2 (https=)
KR (1) KR20220044845A (https=)
CN (1) CN114342049B (https=)
WO (1) WO2021035132A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023278171A1 (en) * 2021-06-29 2023-01-05 Lam Research Corporation Multiple state pulsing for high aspect ratio etch
US20240242935A1 (en) * 2021-09-09 2024-07-18 Lam Research Corporation Multi-state rf pulsing in cycling recipes to reduce charging induced defects
US11987879B2 (en) * 2022-02-16 2024-05-21 Applied Materials, Inc. High aspect ratio taper improvement using directional deposition
KR102916927B1 (ko) * 2022-04-13 2026-01-23 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 디바이스

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239054A (ja) 2008-03-27 2009-10-15 Sumitomo Precision Prod Co Ltd シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2010238960A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2013535074A (ja) 2010-06-11 2013-09-09 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 基板プラズマ処理技術
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
US8382999B2 (en) * 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
US8987140B2 (en) * 2011-04-25 2015-03-24 Applied Materials, Inc. Methods for etching through-silicon vias with tunable profile angles
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
CN103915308B (zh) * 2012-12-31 2016-06-29 中微半导体设备(上海)有限公司 一种双射频脉冲等离子体的刻蚀方法及其刻蚀装置
KR101745686B1 (ko) 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
US9754767B2 (en) * 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9767991B2 (en) * 2015-11-04 2017-09-19 Lam Research Corporation Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
WO2021118862A2 (en) * 2019-12-13 2021-06-17 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
US11545364B2 (en) * 2020-08-24 2023-01-03 Tokyo Electron Limited Pulsed capacitively coupled plasma processes
WO2023278171A1 (en) * 2021-06-29 2023-01-05 Lam Research Corporation Multiple state pulsing for high aspect ratio etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239054A (ja) 2008-03-27 2009-10-15 Sumitomo Precision Prod Co Ltd シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2010238960A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2013535074A (ja) 2010-06-11 2013-09-09 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 基板プラズマ処理技術
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
US12322571B2 (en) 2025-06-03
CN114342049A (zh) 2022-04-12
WO2021035132A1 (en) 2021-02-25
US20220285130A1 (en) 2022-09-08
US20250349514A1 (en) 2025-11-13
CN114342049B (zh) 2025-08-19
KR20220044845A (ko) 2022-04-11
JP2022544673A (ja) 2022-10-20

Similar Documents

Publication Publication Date Title
JP7562637B2 (ja) マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス
KR102916874B1 (ko) 플라즈마 처리 장치
JP6175570B2 (ja) ガスパルスを用いる深掘りシリコンエッチングのための方法
KR100542665B1 (ko) 기판 에칭시 마이크로로딩을 개선시키는 방법 및 장치
KR102898761B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR102741055B1 (ko) 플라즈마 에칭 방법 및 플라즈마 에칭 장치
KR102921723B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
KR102304163B1 (ko) 에칭 방법
TWI722187B (zh) 蝕刻方法
KR20110103356A (ko) 플라즈마 에칭 방법, 플라즈마 에칭 장치 및 컴퓨터 기억 매체
US12074009B2 (en) Apparatus for processing a substrate
JP2018200925A (ja) エッチング方法およびエッチング装置
KR20260027186A (ko) 플라즈마 처리 장치
JP7819259B2 (ja) プラズマ処理装置および電源システム
WO2017199958A1 (ja) エッチング方法
JPWO2020008703A1 (ja) プラズマ処理方法
US20230420263A1 (en) Etching method and plasma processing apparatus
TW202309972A (zh) 電漿處理裝置及rf系統
WO2022215556A1 (ja) エッチング方法及びエッチング処理装置
JP7572123B2 (ja) 基板処理方法及び基板処理装置
JP7229033B2 (ja) 基板処理方法及び基板処理装置
JP7808529B2 (ja) 基板処理方法及びプラズマ処理装置
US20230230807A1 (en) Control of mask cd
WO2026070509A1 (ja) エッチング方法及びプラズマ処理装置
WO2026035547A1 (en) High aspect ratio feature etching by multi-state pulsing

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230727

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230727

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240516

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240521

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240819

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240925

R150 Certificate of patent or registration of utility model

Ref document number: 7562637

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150