JP2024526172A5 - - Google Patents
Info
- Publication number
- JP2024526172A5 JP2024526172A5 JP2023579082A JP2023579082A JP2024526172A5 JP 2024526172 A5 JP2024526172 A5 JP 2024526172A5 JP 2023579082 A JP2023579082 A JP 2023579082A JP 2023579082 A JP2023579082 A JP 2023579082A JP 2024526172 A5 JP2024526172 A5 JP 2024526172A5
- Authority
- JP
- Japan
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163216519P | 2021-06-29 | 2021-06-29 | |
| US63/216,519 | 2021-06-29 | ||
| PCT/US2022/033858 WO2023278171A1 (en) | 2021-06-29 | 2022-06-16 | Multiple state pulsing for high aspect ratio etch |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024526172A JP2024526172A (ja) | 2024-07-17 |
| JPWO2023278171A5 JPWO2023278171A5 (https=) | 2025-06-18 |
| JP2024526172A5 true JP2024526172A5 (https=) | 2025-06-18 |
Family
ID=84692934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023579082A Pending JP2024526172A (ja) | 2021-06-29 | 2022-06-16 | 高アスペクト比エッチングのための多状態パルシング |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US12278112B2 (https=) |
| JP (1) | JP2024526172A (https=) |
| KR (1) | KR20240026068A (https=) |
| WO (1) | WO2023278171A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114342049B (zh) * | 2019-08-22 | 2025-08-19 | 朗姆研究公司 | 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲 |
| WO2022093551A1 (en) * | 2020-10-26 | 2022-05-05 | Lam Research Corporation | Synchronization of rf pulsing schemes and of sensor data collection |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093332A (en) * | 1998-02-04 | 2000-07-25 | Lam Research Corporation | Methods for reducing mask erosion during plasma etching |
| JP3555084B2 (ja) * | 2001-06-11 | 2004-08-18 | Ｎｅｃエレクトロニクス株式会社 | 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置 |
| US9123509B2 (en) | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| US20090004836A1 (en) | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
| US9290848B2 (en) * | 2014-06-30 | 2016-03-22 | Tokyo Electron Limited | Anisotropic etch of copper using passivation |
| KR101745686B1 (ko) | 2014-07-10 | 2017-06-12 | 도쿄엘렉트론가부시키가이샤 | 기판의 고정밀 에칭을 위한 방법 |
| US9640371B2 (en) * | 2014-10-20 | 2017-05-02 | Lam Research Corporation | System and method for detecting a process point in multi-mode pulse processes |
| KR101677748B1 (ko) | 2014-10-29 | 2016-11-29 | 삼성전자 주식회사 | 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법 |
| US9788405B2 (en) * | 2015-10-03 | 2017-10-10 | Applied Materials, Inc. | RF power delivery with approximated saw tooth wave pulsing |
| KR101998943B1 (ko) * | 2016-01-20 | 2019-07-10 | 도쿄엘렉트론가부시키가이샤 | 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조 |
| US11817295B2 (en) * | 2019-08-14 | 2023-11-14 | Tokyo Electron Limited | Three-phase pulsing systems and methods for plasma processing |
| CN114342049B (zh) | 2019-08-22 | 2025-08-19 | 朗姆研究公司 | 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲 |
| TWI889813B (zh) * | 2020-05-14 | 2025-07-11 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
| TWI906346B (zh) * | 2020-08-31 | 2025-12-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
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2022
- 2022-06-16 WO PCT/US2022/033858 patent/WO2023278171A1/en not_active Ceased
- 2022-06-16 KR KR1020227045635A patent/KR20240026068A/ko active Pending
- 2022-06-16 JP JP2023579082A patent/JP2024526172A/ja active Pending
- 2022-06-16 US US18/011,505 patent/US12278112B2/en active Active
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2025
- 2025-03-07 US US19/074,216 patent/US20250210364A1/en active Pending