JP2024526172A - 高アスペクト比エッチングのための多状態パルシング - Google Patents

高アスペクト比エッチングのための多状態パルシング Download PDF

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Publication number
JP2024526172A
JP2024526172A JP2023579082A JP2023579082A JP2024526172A JP 2024526172 A JP2024526172 A JP 2024526172A JP 2023579082 A JP2023579082 A JP 2023579082A JP 2023579082 A JP2023579082 A JP 2023579082A JP 2024526172 A JP2024526172 A JP 2024526172A
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power level
state
source
bias
pulsed
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Japanese (ja)
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JPWO2023278171A5 (https=
JP2024526172A5 (https=
Inventor
ジョイ・アニルッダ
ドール・ニキル
ウォン・メレット
ハドソン・エリック
シース・ジェイ
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Lam Research Corp
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Lam Research Corp
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Publication of JP2024526172A publication Critical patent/JP2024526172A/ja
Publication of JPWO2023278171A5 publication Critical patent/JPWO2023278171A5/ja
Publication of JP2024526172A5 publication Critical patent/JP2024526172A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2023579082A 2021-06-29 2022-06-16 高アスペクト比エッチングのための多状態パルシング Pending JP2024526172A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163216519P 2021-06-29 2021-06-29
US63/216,519 2021-06-29
PCT/US2022/033858 WO2023278171A1 (en) 2021-06-29 2022-06-16 Multiple state pulsing for high aspect ratio etch

Publications (3)

Publication Number Publication Date
JP2024526172A true JP2024526172A (ja) 2024-07-17
JPWO2023278171A5 JPWO2023278171A5 (https=) 2025-06-18
JP2024526172A5 JP2024526172A5 (https=) 2025-06-18

Family

ID=84692934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023579082A Pending JP2024526172A (ja) 2021-06-29 2022-06-16 高アスペクト比エッチングのための多状態パルシング

Country Status (4)

Country Link
US (2) US12278112B2 (https=)
JP (1) JP2024526172A (https=)
KR (1) KR20240026068A (https=)
WO (1) WO2023278171A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114342049B (zh) * 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
WO2022093551A1 (en) * 2020-10-26 2022-05-05 Lam Research Corporation Synchronization of rf pulsing schemes and of sensor data collection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068708A (ja) * 2001-06-11 2003-03-07 Nec Corp 半導体装置の製造方法及び半導体製造装置
JP2016082233A (ja) * 2014-10-20 2016-05-16 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法
JP2017520938A (ja) * 2014-06-30 2017-07-27 東京エレクトロン株式会社 不動態化を使用する銅の異方性エッチング
JP2018535504A (ja) * 2015-10-03 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 近似鋸歯状波パルス生成によるｒｆ電力供給
US20210050183A1 (en) * 2019-08-14 2021-02-18 Tokyo Electron Limited Three-phase pulsing systems and methods for plasma processing
WO2021035132A1 (en) * 2019-08-22 2021-02-25 Lam Research Corporation Multi-state rf pulsing to control mask shape and breaking selectivity versus process margin trade-off

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090004836A1 (en) 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
KR101745686B1 (ko) 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
KR101677748B1 (ko) 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
KR101998943B1 (ko) * 2016-01-20 2019-07-10 도쿄엘렉트론가부시키가이샤 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조
TWI889813B (zh) * 2020-05-14 2025-07-11 日商東京威力科創股份有限公司 電漿處理裝置
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068708A (ja) * 2001-06-11 2003-03-07 Nec Corp 半導体装置の製造方法及び半導体製造装置
JP2017520938A (ja) * 2014-06-30 2017-07-27 東京エレクトロン株式会社 不動態化を使用する銅の異方性エッチング
JP2016082233A (ja) * 2014-10-20 2016-05-16 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法
JP2018535504A (ja) * 2015-10-03 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 近似鋸歯状波パルス生成によるｒｆ電力供給
US20210050183A1 (en) * 2019-08-14 2021-02-18 Tokyo Electron Limited Three-phase pulsing systems and methods for plasma processing
WO2021035132A1 (en) * 2019-08-22 2021-02-25 Lam Research Corporation Multi-state rf pulsing to control mask shape and breaking selectivity versus process margin trade-off

Also Published As

Publication number Publication date
WO2023278171A1 (en) 2023-01-05
KR20240026068A (ko) 2024-02-27
US12278112B2 (en) 2025-04-15
US20250210364A1 (en) 2025-06-26
US20240120205A1 (en) 2024-04-11

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