KR20240026068A - 고 종횡비 에칭을 위한 다중 상태 펄싱 - Google Patents

고 종횡비 에칭을 위한 다중 상태 펄싱 Download PDF

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Publication number
KR20240026068A
KR20240026068A KR1020227045635A KR20227045635A KR20240026068A KR 20240026068 A KR20240026068 A KR 20240026068A KR 1020227045635 A KR1020227045635 A KR 1020227045635A KR 20227045635 A KR20227045635 A KR 20227045635A KR 20240026068 A KR20240026068 A KR 20240026068A
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South Korea
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power level
state
source
bias
pulsed
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KR1020227045635A
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English (en)
Korean (ko)
Inventor
아니룻다 조이
닉힐 돌
메렛 웡
에릭 허드슨
제이 셰스
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램 리써치 코포레이션
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Publication of KR20240026068A publication Critical patent/KR20240026068A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020227045635A 2021-06-29 2022-06-16 고 종횡비 에칭을 위한 다중 상태 펄싱 Pending KR20240026068A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163216519P 2021-06-29 2021-06-29
US63/216,519 2021-06-29
PCT/US2022/033858 WO2023278171A1 (en) 2021-06-29 2022-06-16 Multiple state pulsing for high aspect ratio etch

Publications (1)

Publication Number Publication Date
KR20240026068A true KR20240026068A (ko) 2024-02-27

Family

ID=84692934

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227045635A Pending KR20240026068A (ko) 2021-06-29 2022-06-16 고 종횡비 에칭을 위한 다중 상태 펄싱

Country Status (4)

Country Link
US (2) US12278112B2 (https=)
JP (1) JP2024526172A (https=)
KR (1) KR20240026068A (https=)
WO (1) WO2023278171A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114342049B (zh) * 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
WO2022093551A1 (en) * 2020-10-26 2022-05-05 Lam Research Corporation Synchronization of rf pulsing schemes and of sensor data collection

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
JP3555084B2 (ja) * 2001-06-11 2004-08-18 Ｎｅｃエレクトロニクス株式会社 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置
US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090004836A1 (en) 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US9290848B2 (en) * 2014-06-30 2016-03-22 Tokyo Electron Limited Anisotropic etch of copper using passivation
KR101745686B1 (ko) 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
KR101677748B1 (ko) 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9788405B2 (en) * 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
KR101998943B1 (ko) * 2016-01-20 2019-07-10 도쿄엘렉트론가부시키가이샤 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조
US11817295B2 (en) * 2019-08-14 2023-11-14 Tokyo Electron Limited Three-phase pulsing systems and methods for plasma processing
CN114342049B (zh) 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
TWI889813B (zh) * 2020-05-14 2025-07-11 日商東京威力科創股份有限公司 電漿處理裝置
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法

Also Published As

Publication number Publication date
WO2023278171A1 (en) 2023-01-05
JP2024526172A (ja) 2024-07-17
US12278112B2 (en) 2025-04-15
US20250210364A1 (en) 2025-06-26
US20240120205A1 (en) 2024-04-11

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