JP2022543116A5 - - Google Patents

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Publication number
JP2022543116A5
JP2022543116A5 JP2022506757A JP2022506757A JP2022543116A5 JP 2022543116 A5 JP2022543116 A5 JP 2022543116A5 JP 2022506757 A JP2022506757 A JP 2022506757A JP 2022506757 A JP2022506757 A JP 2022506757A JP 2022543116 A5 JP2022543116 A5 JP 2022543116A5
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JP
Japan
Prior art keywords
gate
transistor
conductive trace
transistors
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022506757A
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English (en)
Japanese (ja)
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JP7585593B2 (ja
JP2022543116A (ja
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Publication date
Priority claimed from US16/848,366 external-priority patent/US11450671B2/en
Application filed filed Critical
Publication of JP2022543116A publication Critical patent/JP2022543116A/ja
Publication of JP2022543116A5 publication Critical patent/JP2022543116A5/ja
Application granted granted Critical
Publication of JP7585593B2 publication Critical patent/JP7585593B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022506757A 2019-08-07 2020-06-24 積み重ねられたデバイスを有する半導体装置及びその製造方法 Active JP7585593B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962883865P 2019-08-07 2019-08-07
US62/883,865 2019-08-07
US16/848,366 2020-04-14
US16/848,366 US11450671B2 (en) 2019-08-07 2020-04-14 Semiconductor apparatus having stacked devices and method of manufacture thereof
PCT/US2020/039379 WO2021025797A1 (en) 2019-08-07 2020-06-24 Semiconductor apparatus having stacked devices and method of manufacture thereof

Publications (3)

Publication Number Publication Date
JP2022543116A JP2022543116A (ja) 2022-10-07
JP2022543116A5 true JP2022543116A5 (https=) 2023-05-02
JP7585593B2 JP7585593B2 (ja) 2024-11-19

Family

ID=74498172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022506757A Active JP7585593B2 (ja) 2019-08-07 2020-06-24 積み重ねられたデバイスを有する半導体装置及びその製造方法

Country Status (6)

Country Link
US (1) US11450671B2 (https=)
JP (1) JP7585593B2 (https=)
KR (1) KR102686114B1 (https=)
CN (1) CN114175248A (https=)
TW (1) TWI855124B (https=)
WO (1) WO2021025797A1 (https=)

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US12183738B2 (en) * 2021-01-29 2024-12-31 Samsung Electronics Co., Ltd. Cross-coupled gate design for stacked device with separated top-down gate
US11764154B2 (en) * 2021-07-30 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Power rail and signal line arrangement in integrated circuits having stacked transistors
US12588249B2 (en) * 2021-08-13 2026-03-24 Samsung Electronics Co., Ltd. Integrated circuit devices including a cross-coupled structure
US11881393B2 (en) * 2021-09-29 2024-01-23 Advanced Micro Devices, Inc. Cross field effect transistor library cell architecture design
US20250048690A1 (en) * 2021-12-02 2025-02-06 Imec Vzw A complementary field-effect transistor device
US11894436B2 (en) * 2021-12-06 2024-02-06 International Business Machines Corporation Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages
US20230178544A1 (en) * 2021-12-06 2023-06-08 International Business Machines Corporation Complementary field effect transistors having multiple voltage thresholds
US12218135B2 (en) 2022-01-13 2025-02-04 Tokyo Electron Limited Wiring in diffusion breaks in an integrated circuit
US20230307457A1 (en) * 2022-03-24 2023-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US12563715B2 (en) 2022-09-07 2026-02-24 International Business Machines Corporation Stacked random-access-memory with complementary adjacent cells
US12557260B2 (en) 2022-10-05 2026-02-17 International Business Machines Corporation Stacked-FET SRAM cell with bottom pFET
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US12475942B2 (en) * 2022-12-01 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof
US12562211B2 (en) * 2023-03-20 2026-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Power control circuit for memory circuit based on complementary field effect transistor devices
EP4576217A1 (en) * 2023-12-22 2025-06-25 IMEC vzw Sram device
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US10833078B2 (en) 2017-12-04 2020-11-10 Tokyo Electron Limited Semiconductor apparatus having stacked gates and method of manufacture thereof

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