KR102686114B1 - 적층된 디바이스를 갖는 반도체 장치 및 그 제조 방법 - Google Patents

적층된 디바이스를 갖는 반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR102686114B1
KR102686114B1 KR1020227006909A KR20227006909A KR102686114B1 KR 102686114 B1 KR102686114 B1 KR 102686114B1 KR 1020227006909 A KR1020227006909 A KR 1020227006909A KR 20227006909 A KR20227006909 A KR 20227006909A KR 102686114 B1 KR102686114 B1 KR 102686114B1
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gate
transistor
conductive trace
routing track
semiconductor device
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KR20220042421A (ko
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라스 리브만
제프리 스미스
안톤 데빌리어스
다니엘 샤네모우게임
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도쿄엘렉트론가부시키가이샤
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    • H01L27/0688—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H01L27/092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020227006909A 2019-08-07 2020-06-24 적층된 디바이스를 갖는 반도체 장치 및 그 제조 방법 Active KR102686114B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962883865P 2019-08-07 2019-08-07
US62/883,865 2019-08-07
US16/848,366 2020-04-14
US16/848,366 US11450671B2 (en) 2019-08-07 2020-04-14 Semiconductor apparatus having stacked devices and method of manufacture thereof
PCT/US2020/039379 WO2021025797A1 (en) 2019-08-07 2020-06-24 Semiconductor apparatus having stacked devices and method of manufacture thereof

Publications (2)

Publication Number Publication Date
KR20220042421A KR20220042421A (ko) 2022-04-05
KR102686114B1 true KR102686114B1 (ko) 2024-07-17

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Country Status (6)

Country Link
US (1) US11450671B2 (https=)
JP (1) JP7585593B2 (https=)
KR (1) KR102686114B1 (https=)
CN (1) CN114175248A (https=)
TW (1) TWI855124B (https=)
WO (1) WO2021025797A1 (https=)

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US11469321B2 (en) * 2020-02-27 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US11550985B2 (en) 2020-04-09 2023-01-10 Tokyo Electron Limited Method for automated standard cell design
US11714945B2 (en) 2020-04-09 2023-08-01 Tokyo Electron Limited Method for automated standard cell design
US12183738B2 (en) * 2021-01-29 2024-12-31 Samsung Electronics Co., Ltd. Cross-coupled gate design for stacked device with separated top-down gate
US11764154B2 (en) * 2021-07-30 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Power rail and signal line arrangement in integrated circuits having stacked transistors
US12588249B2 (en) * 2021-08-13 2026-03-24 Samsung Electronics Co., Ltd. Integrated circuit devices including a cross-coupled structure
US11881393B2 (en) * 2021-09-29 2024-01-23 Advanced Micro Devices, Inc. Cross field effect transistor library cell architecture design
US20250048690A1 (en) * 2021-12-02 2025-02-06 Imec Vzw A complementary field-effect transistor device
US11894436B2 (en) * 2021-12-06 2024-02-06 International Business Machines Corporation Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages
US20230178544A1 (en) * 2021-12-06 2023-06-08 International Business Machines Corporation Complementary field effect transistors having multiple voltage thresholds
US12218135B2 (en) 2022-01-13 2025-02-04 Tokyo Electron Limited Wiring in diffusion breaks in an integrated circuit
US20230307457A1 (en) * 2022-03-24 2023-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US12563715B2 (en) 2022-09-07 2026-02-24 International Business Machines Corporation Stacked random-access-memory with complementary adjacent cells
US12557260B2 (en) 2022-10-05 2026-02-17 International Business Machines Corporation Stacked-FET SRAM cell with bottom pFET
JP2024062873A (ja) * 2022-10-25 2024-05-10 株式会社アドバンテスト 半導体装置および半導体装置の製造方法
US12475942B2 (en) * 2022-12-01 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof
US12562211B2 (en) * 2023-03-20 2026-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Power control circuit for memory circuit based on complementary field effect transistor devices
EP4576217A1 (en) * 2023-12-22 2025-06-25 IMEC vzw Sram device
KR20260012944A (ko) * 2024-07-19 2026-01-27 삼성전자주식회사 반도체 장치 및 그의 제조 방법

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US20190172828A1 (en) 2017-12-04 2019-06-06 Tokyo Electron Limited Semiconductor apparatus having stacked gates and method of manufacture thereof

Also Published As

Publication number Publication date
US11450671B2 (en) 2022-09-20
JP7585593B2 (ja) 2024-11-19
CN114175248A (zh) 2022-03-11
TW202121652A (zh) 2021-06-01
KR20220042421A (ko) 2022-04-05
TWI855124B (zh) 2024-09-11
JP2022543116A (ja) 2022-10-07
US20210043630A1 (en) 2021-02-11
WO2021025797A1 (en) 2021-02-11

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