JP2022541329A5 - - Google Patents

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Publication number
JP2022541329A5
JP2022541329A5 JP2022504702A JP2022504702A JP2022541329A5 JP 2022541329 A5 JP2022541329 A5 JP 2022541329A5 JP 2022504702 A JP2022504702 A JP 2022504702A JP 2022504702 A JP2022504702 A JP 2022504702A JP 2022541329 A5 JP2022541329 A5 JP 2022541329A5
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JP
Japan
Prior art keywords
connection region
connection
terminal
substrate
connection area
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JP2022504702A
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English (en)
Japanese (ja)
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JP2022541329A (ja
JP7750825B2 (ja
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Priority claimed from PCT/EP2020/070879 external-priority patent/WO2021013967A1/en
Publication of JP2022541329A publication Critical patent/JP2022541329A/ja
Publication of JP2022541329A5 publication Critical patent/JP2022541329A5/ja
Application granted granted Critical
Publication of JP7750825B2 publication Critical patent/JP7750825B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022504702A 2019-07-25 2020-07-23 パワー半導体モジュールおよびその形成方法 Active JP7750825B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19188325.5 2019-07-25
EP19188325 2019-07-25
PCT/EP2020/070879 WO2021013967A1 (en) 2019-07-25 2020-07-23 Power semiconductor module and method of forming the same

Publications (3)

Publication Number Publication Date
JP2022541329A JP2022541329A (ja) 2022-09-22
JP2022541329A5 true JP2022541329A5 (https=) 2023-09-21
JP7750825B2 JP7750825B2 (ja) 2025-10-07

Family

ID=67438880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022504702A Active JP7750825B2 (ja) 2019-07-25 2020-07-23 パワー半導体モジュールおよびその形成方法

Country Status (5)

Country Link
US (1) US20220246577A1 (https=)
EP (1) EP4003632B1 (https=)
JP (1) JP7750825B2 (https=)
CN (1) CN114175223A (https=)
WO (1) WO2021013967A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7643186B2 (ja) * 2021-05-31 2025-03-11 富士電機株式会社 半導体モジュールおよび半導体モジュールの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982742A (ja) * 1995-09-11 1997-03-28 Fujitsu Ltd ワイヤボンディング方法
JP3625986B2 (ja) * 1997-04-11 2005-03-02 ローム株式会社 放熱板を具備する半導体装置、及び放熱板の超音波接合方法
JP4222356B2 (ja) * 1997-06-17 2009-02-12 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置、電子機器及び投射型表示装置
US6979647B2 (en) * 2003-09-02 2005-12-27 Texas Instruments Incorporated Method for chemical etch control of noble metals in the presence of less noble metals
TW200528550A (en) * 2003-12-22 2005-09-01 Uyemura C & Co Ltd Polishing solution and method of polishing nonferrous metal materials
US20050139292A1 (en) * 2003-12-31 2005-06-30 Suresh Ramarajan Method and apparatus for minimizing thickness-to-planarity and dishing in CMP
JP4709563B2 (ja) * 2005-03-31 2011-06-22 株式会社東芝 半導体装置の製造方法
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US20090315159A1 (en) * 2008-06-20 2009-12-24 Donald Charles Abbott Leadframes having both enhanced-adhesion and smooth surfaces and methods to form the same
JP2011060927A (ja) 2009-09-09 2011-03-24 Hitachi Ltd 半導体装置
DE102009050257A1 (de) * 2009-10-21 2011-05-12 Mann + Hummel Gmbh Filterelement, Filtereinrichtung und Verfahren zum Herstellen eines Filterelements
JP2012243943A (ja) 2011-05-19 2012-12-10 Tokai Rika Co Ltd ワイヤボンディング構造及び電子装置とその製造方法
JP2015146393A (ja) 2014-02-03 2015-08-13 カルソニックカンセイ株式会社 超音波ウェッジボンディング構造
DE102014104496B4 (de) 2014-03-31 2019-07-18 Semikron Elektronik Gmbh & Co. Kg Vorrichtung zur schweißtechnischen Verbindung von Anschlusselementen mit dem Substrat eines Leistungshalbleitermoduls und zugehöriges Verfahren
WO2016116177A1 (en) * 2015-01-23 2016-07-28 Abb Technology Ag Method of generating a power semiconductor module
US10396057B2 (en) * 2015-02-13 2019-08-27 Nissan Arc, Ltd. Half-bridge power semiconductor module and method for manufacturing same

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