CN114175223A - 功率半导体模块和形成功率半导体模块的方法 - Google Patents

功率半导体模块和形成功率半导体模块的方法 Download PDF

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Publication number
CN114175223A
CN114175223A CN202080053829.1A CN202080053829A CN114175223A CN 114175223 A CN114175223 A CN 114175223A CN 202080053829 A CN202080053829 A CN 202080053829A CN 114175223 A CN114175223 A CN 114175223A
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CN
China
Prior art keywords
connection region
terminal
power semiconductor
substrate
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080053829.1A
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English (en)
Chinese (zh)
Inventor
D·吉隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Co ltd
Original Assignee
Hitachi Energy Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Switzerland AG filed Critical Hitachi Energy Switzerland AG
Publication of CN114175223A publication Critical patent/CN114175223A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/26—Auxiliary equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07536—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
CN202080053829.1A 2019-07-25 2020-07-23 功率半导体模块和形成功率半导体模块的方法 Pending CN114175223A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19188325.5 2019-07-25
EP19188325 2019-07-25
PCT/EP2020/070879 WO2021013967A1 (en) 2019-07-25 2020-07-23 Power semiconductor module and method of forming the same

Publications (1)

Publication Number Publication Date
CN114175223A true CN114175223A (zh) 2022-03-11

Family

ID=67438880

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080053829.1A Pending CN114175223A (zh) 2019-07-25 2020-07-23 功率半导体模块和形成功率半导体模块的方法

Country Status (5)

Country Link
US (1) US20220246577A1 (https=)
EP (1) EP4003632B1 (https=)
JP (1) JP7750825B2 (https=)
CN (1) CN114175223A (https=)
WO (1) WO2021013967A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7643186B2 (ja) * 2021-05-31 2025-03-11 富士電機株式会社 半導体モジュールおよび半導体モジュールの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982742A (ja) * 1995-09-11 1997-03-28 Fujitsu Ltd ワイヤボンディング方法
JP2006286666A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 半導体装置の製造方法
JP2012243943A (ja) * 2011-05-19 2012-12-10 Tokai Rika Co Ltd ワイヤボンディング構造及び電子装置とその製造方法
CN107210232A (zh) * 2015-01-23 2017-09-26 Abb瑞士股份有限公司 生成功率半导体模块的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3625986B2 (ja) * 1997-04-11 2005-03-02 ローム株式会社 放熱板を具備する半導体装置、及び放熱板の超音波接合方法
JP4222356B2 (ja) * 1997-06-17 2009-02-12 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置、電子機器及び投射型表示装置
US6979647B2 (en) * 2003-09-02 2005-12-27 Texas Instruments Incorporated Method for chemical etch control of noble metals in the presence of less noble metals
TW200528550A (en) * 2003-12-22 2005-09-01 Uyemura C & Co Ltd Polishing solution and method of polishing nonferrous metal materials
US20050139292A1 (en) * 2003-12-31 2005-06-30 Suresh Ramarajan Method and apparatus for minimizing thickness-to-planarity and dishing in CMP
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US20090315159A1 (en) * 2008-06-20 2009-12-24 Donald Charles Abbott Leadframes having both enhanced-adhesion and smooth surfaces and methods to form the same
JP2011060927A (ja) 2009-09-09 2011-03-24 Hitachi Ltd 半導体装置
DE102009050257A1 (de) * 2009-10-21 2011-05-12 Mann + Hummel Gmbh Filterelement, Filtereinrichtung und Verfahren zum Herstellen eines Filterelements
JP2015146393A (ja) 2014-02-03 2015-08-13 カルソニックカンセイ株式会社 超音波ウェッジボンディング構造
DE102014104496B4 (de) 2014-03-31 2019-07-18 Semikron Elektronik Gmbh & Co. Kg Vorrichtung zur schweißtechnischen Verbindung von Anschlusselementen mit dem Substrat eines Leistungshalbleitermoduls und zugehöriges Verfahren
US10396057B2 (en) * 2015-02-13 2019-08-27 Nissan Arc, Ltd. Half-bridge power semiconductor module and method for manufacturing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982742A (ja) * 1995-09-11 1997-03-28 Fujitsu Ltd ワイヤボンディング方法
JP2006286666A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 半導体装置の製造方法
JP2012243943A (ja) * 2011-05-19 2012-12-10 Tokai Rika Co Ltd ワイヤボンディング構造及び電子装置とその製造方法
CN107210232A (zh) * 2015-01-23 2017-09-26 Abb瑞士股份有限公司 生成功率半导体模块的方法

Also Published As

Publication number Publication date
EP4003632A1 (en) 2022-06-01
JP2022541329A (ja) 2022-09-22
EP4003632B1 (en) 2023-12-13
US20220246577A1 (en) 2022-08-04
WO2021013967A1 (en) 2021-01-28
JP7750825B2 (ja) 2025-10-07

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Effective date of registration: 20240112

Address after: Zurich, SUI

Applicant after: Hitachi Energy Co.,Ltd.

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Applicant before: Hitachi energy Switzerland AG