TWI604543B - 引線接合方法 - Google Patents
引線接合方法 Download PDFInfo
- Publication number
- TWI604543B TWI604543B TW105133452A TW105133452A TWI604543B TW I604543 B TWI604543 B TW I604543B TW 105133452 A TW105133452 A TW 105133452A TW 105133452 A TW105133452 A TW 105133452A TW I604543 B TWI604543 B TW I604543B
- Authority
- TW
- Taiwan
- Prior art keywords
- solder ball
- metal pad
- metal
- wire bonding
- wire
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45647—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48647—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48824—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48847—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85047—Reshaping, e.g. forming the ball or the wedge of the wire connector by mechanical means, e.g. severing, pressing, stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
本發明是有關於一種引線接合方法以及引線接合結構。
半導體晶粒是由半導體晶圓所形成的微型積體電路。晶粒由晶圓切割並接著附著於基材或半導體晶片載體。半導體晶粒上的接合墊係經由接合線(例如,使用引線接合設備)以電性連接至載體上的電性接點(也被稱為引線或引線指)。引線接合為使用熱、壓力與超音波能量等組合的固相製程,藉以形成接合墊與載體引線之間的接合線。
如第1圖所示,在引線接合型元件的半導體元件組件中,一般使用球狀接合結構110將線體100的尖端附著至晶粒上的接合墊200。球狀接合結構110係藉由對線體100的尖端施加高壓電荷而形成,其係熱熔尖端以在尖端形成球體。球狀接合結構110接著被焊接至接合墊200。線體100接著被移動至載體的其中一引線,且第二接合結構係形成以將線體100的另一端附著至載體的前述引線。
在接合期間,球狀接合結構110先被按壓至晶粒
的接合墊200上,因此球狀接合結構110係變形以在焊接之前增加其與接合墊200之間的接觸面積。一旦將球狀接合結構110按壓至晶粒的接合墊200上的力量滿足預定力量時,超音波能量係施加以加熱或熱熔變形之球狀接合結構110與接合墊200之間的接觸界面。在熱熔之接觸界面冷卻之後,球狀接合結構110與接合墊200係相互焊接。
然而,若線體100的硬度大於接合墊200的硬度,則球狀接合結構110會陷入接合墊200,且接合墊200會在球狀接合結構110按壓至接合墊200上的期間及/或在施加超音波能量的期間對應地噴濺。一旦接合墊200的厚度太薄時,前述按壓球狀接合結構110的步驟及/或施加超音波能量的步驟可能會輕易地對晶粒造成損壞(例如產生裂縫),這可能進一步影響互連結構並因此導致異常電訊號。換言之,薄的接合墊200無法提供晶粒緩衝效果。為了解決此問題,可以增加接合墊200的厚度,但成本也會增加。
因此,如何提出一種可解決上述問題的引線接合方法,是目前業界亟欲投入研發資源解決的問題之一。
有鑑於此,本發明之一目的在於提出一種可將一線體之焊球(Free Air Ball,FAB)接合至薄金屬墊上而不損壞金屬墊所設置之基板的引線接合方法。
為了達到上述目的,依據本發明之一實施方式,一種引線接合方法包含形成焊球於金屬線的一端;將焊球按壓
至工件的平面上以使焊球變形;使變形之焊球接觸金屬墊,其中金屬墊由第一材料所製成且金屬線由第二材料所製成,並且第一材料的硬度小於第二材料的硬度;以及將變形之焊球接合至金屬墊上。
於一或多個實施方式中,前述使變形之焊球接觸金屬墊係施加力量而執行。
於一或多個實施方式中,前述使變形之焊球接觸金屬墊以及將變形之焊球接合至金屬墊上係實質上同時執行。
於一或多個實施方式中,前述將焊球按壓至平面上所施加之力量,係大於使變形之焊球接觸金屬墊所施加之力量。
於一或多個實施方式中,前述將焊球按壓至平面上係在焊球上形成對應平面之平坦接觸面。
於一或多個實施方式中,前述將變形之焊球接合至金屬墊上係包含將平坦接觸面接合至金屬墊上。
於一或多個實施方式中,前述將變形之焊球接合至金屬墊上係在變形之焊球與金屬墊之間的接觸界面形成介金屬化合物(Intermetallic Compound,IMC)。
於一或多個實施方式中,前述將變形之焊球接合至金屬墊上係藉由對變形之焊球與金屬墊之間的接觸界面施加超音波能量而執行。
為了達到上述目的,依據本發明之另一實施方式,一種引線接合結構包含金屬墊以及變形之焊球。金屬墊由第一材料所製成。變形之焊球由金屬線所製成。金屬線具有平
坦接觸面與金屬墊相接合。金屬線具有第二材料。第一材料的硬度小於第二材料的硬度。平坦接觸面陷入金屬墊達一深度。此深度相對於金屬墊之厚度的比值係小於0.5。
於一或多個實施方式中,前述之第一材料為鋁。
於一或多個實施方式中,前述之第二材料為銅或銅合金。
於一或多個實施方式中,前述之銅合金包含銅、鈀以及金。
於一或多個實施方式中,介金屬化合物形成於平坦接觸面與金屬墊之間的接觸界面。
於一或多個實施方式中,引線接合結構還包含基板。金屬墊設置該基板上。
於一或多個實施方式中,前述之基板為矽基板或氧化基板。
於一或多個實施方式中,前述之金屬墊之厚度的範圍實質上為0.01微米至6微米。
綜上所述,根據本發明的引線接合方法,金屬線之焊球係預先藉由使用工件而變形,進而獲得平坦接觸面,因此變形之焊球可在後續接合操作中輕輕地按壓至接合墊上。藉此,本發明的引線接合方法可有效地減少接合墊的消耗(幾乎不噴濺)並盡可能地維持接合墊的原始厚度,並且還可解決接合墊下方的結構在焊球以高壓被按壓至接合墊時發生損壞的習知問題。
以上所述僅係用以闡述本發明所欲解決的問題、
解決問題的技術手段、及其產生的功效等等,本發明之具體細節將在下文的實施方式及相關圖式中詳細介紹。
100‧‧‧線體
110‧‧‧球狀接合結構
200‧‧‧接合墊
300‧‧‧金屬線
310、310’‧‧‧焊球
311‧‧‧平坦接觸面
400‧‧‧毛細管
500‧‧‧基板
510‧‧‧金屬墊
600‧‧‧工件
700‧‧‧介金屬化合物
S101~S104‧‧‧步驟
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖為繪示習知之引線接合製程的剖視示意圖。
第2圖為繪示本發明一實施方式之引線接合方法的流程圖。
第3圖為繪示本發明一實施方式之引線接合第一步驟的剖視示意圖。
第4A圖為繪示本發明一實施方式之引線接合第一步驟的另一示意圖。
第4B圖為繪示本發明一實施方式之引線接合第二步驟的示意圖。
第4C圖為繪示本發明一實施方式之引線接合第三步驟的示意圖。
第4D圖為繪示本發明一實施方式之引線接合第四步驟的示意圖。
第5圖為繪示本發明一實施方式之引線接合結構的示意圖。
以下將以圖式揭露本發明之複數個實施方式,為
明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。並且,除非有其他表示,在不同圖式中相同之元件符號可視為相對應的元件。這些圖式之繪示是為了清楚表達這些實施方式中各元件之間的連接關係,並非繪示各元件的實際尺寸。
請參照第2圖至第4D圖。第2圖為繪示本發明一實施方式之引線接合方法的流程圖。第3圖為繪示本發明一實施方式之引線接合第一步驟的剖視示意圖。第4A圖為繪示本發明一實施方式之引線接合第一步驟的另一示意圖。第4B圖為繪示本發明一實施方式之引線接合第二步驟的示意圖。第4C圖為繪示本發明一實施方式之引線接合第三步驟的示意圖。第4D圖為繪示本發明一實施方式之引線接合第四步驟的示意圖。
引線接合方法包含步驟S101:形成焊球(Free Air Ball,FAB)於金屬線的一端。如第3圖與第4A圖所示,金屬線300進給進入引線接合機器(圖未示)的毛細管400中。焊球310係形成於金屬線300的尖端。焊球310係藉由對金屬線300的尖端施加高壓電荷而形成,其係熱熔尖端以在尖端形成球體。具體來說,此球體成型製程可藉由利用放電結球(Electronic flame off,EFO)製程對氣隙離子化而達成。在放電結球製程中,電加熱放電發生於兩電極之間,其中一電極為金屬線
300(陽極),一般來說可包含銅或金,而另一電極為平板(陰極)。放電結球探頭在放電過程中所產生的熱能會導致金屬線300的電極熱熔,且熱熔的金屬的表面張力會使得金屬捲起成球型。當有足夠量的金屬(即金屬線300)熱熔時,放電即可終止且熱熔之球體可被固化。由此產生的球體即為前述焊球310。
引線接合方法還包含步驟S102:將焊球按壓至工件的平面上以使焊球變形。如第4B圖所示,焊球310係被按壓至工件600的平面上以使焊球310變形。於一些實施方式中,在執行步驟S102之後,平坦接觸面311係對應工件600之平面而形成於變形之焊球310’上。於一些實施方式中,工件600可以是由任何適當材料所製成之板體。於一些實施方式中,為了適當地在變形之焊球310’上獲得平坦接觸面311,可使工件600的硬度大於焊球310的硬度,但本發明並不以此為限。於一些實施方式中,工件600可以是基板500(見第5圖)上的金屬指狀結構(圖未示),但本發明並不以此為限。於一些實施方式中,工件600可以是搭載晶片之封裝基板的一部分。
引線接合方法還包含步驟S103:使變形之焊球接觸金屬墊,其中金屬墊由第一材料所製成且金屬線由第二材料所製成,並且第一材料的硬度小於第二材料的硬度。如第4C圖所示,變形之焊球310’係接觸金屬墊510,其中金屬墊510由第一材料所製成且金屬線300由第二材料所製成,並且第一材料的硬度小於第二材料的硬度。於一些實施方式中,第一材料為鋁,且第二材料為銅或銅合金,但本發明並不以此為限。於一些實施方式中,前述之銅合金包含銅、鈀以及金,但本發
明並不以此為限。
於一些實施方式中,前述使變形之焊球310’接觸金屬墊510的步驟(即步驟S103)係施加力量而執行,且前述將焊球310按壓至平面上的步驟(即步驟S102)所施加之力量,係大於使變形之焊球310’接觸金屬墊510的步驟所施加之力量。換句話說,在焊球310完整變形以獲得平坦接觸面311之後,變形之焊球310’可在後續接合操作中以較小的力量接觸金屬墊510,因此可避免對金屬墊510下方的結構(例如,金屬墊510所設置之基板500,如第5圖所示)造成損壞。
引線接合方法還包含步驟S104:將變形之焊球接合至金屬墊上。如第4D圖所示,變形之焊球310’係接合至金屬墊510上。於一些實施方式中,前述將變形之焊球310’接合至金屬墊510上的步驟(即步驟S104)係藉由對變形之焊球310’與金屬墊510之間的接觸界面施加超音波能量而執行。於一些實施方式中,前述使變形之焊球310’接觸金屬墊510的步驟(即步驟S103)以及將變形之焊球310’接合至金屬墊510上的步驟(即步驟S104)係實質上同時執行。於一些實施方式中,前述將變形之焊球310’接合至金屬墊510上的步驟係在變形之焊球310’與金屬墊510之間的接觸界面形成介金屬化合物(Intermetallic Compound,IMC)700。介金屬化合物700可在變形之焊球310’與金屬墊510之間的接觸界面形成共晶系統,藉以使變形之焊球310’與金屬墊510相接合。
請參照第5圖,其為繪示本發明一實施方式之引線接合結構的示意圖。引線接合結構包含基板500、金屬墊510
以及金屬線300。金屬墊510設置於基板500上。金屬墊510由第一材料所製成。金屬線300具有變形之焊球310’,位於金屬線300的尖端。變形之焊球310’具有平坦接觸面311與金屬墊510相接合。金屬線300由第二材料所製成。第一材料的硬度小於第二材料的硬度。平坦接觸面311陷入金屬墊510達一深度D。此深度D相對於金屬墊510之厚度T的比值係小於0.5。
於本實施方式中,金屬墊510係直接設置於基板500上,但本發明並不以此為限。於其他一些實施方式中,金屬墊510係間接設置於基板500上。舉例來說,於其他一些實施方式中,一鈍化層覆蓋於基板500上,且金屬墊510設置於鈍化層上。
於一些實施方式中,金屬墊510之厚度的範圍實質上為0.01微米至6微米,但本發明並不以此為限。
由前述結構配置可知,本發明之引線接合結構可包含薄金屬墊510以及金屬線300,其中薄金屬墊510具有厚度T,而金屬線300具有接合至金屬墊510且陷入金屬墊510的深度D非常小的變形之焊球310’。並且,引線接合結構係使用本發明之引線接合方法所製造的。
反之,若變形之焊球310’係使用習知引線接合方法接合至薄金屬墊510上,則平坦接觸面311陷入金屬墊510的深度肯定會較大,致使金屬墊510噴濺,且金屬墊510下方的基板500非常有可能因為金屬墊510的小厚度T而損壞。
於一些實施方式中,第一材料為鋁,而第二材料為銅或銅合金,但本發明並不以此為限。於一些實施方式中,
前述之銅合金包含銅、鈀以及金,但本發明並不以此為限。於一些實施方式中,介金屬化合物形成於平坦接觸面311與金屬墊510之間的接觸界面。於一些實施方式中,基板500為矽基板或氧化基板。
由以上對於本發明之具體實施方式之詳述,可以明顯地看出,根據本發明的引線接合方法,金屬線之焊球係預先藉由使用工件而變形,進而獲得平坦接觸面,因此變形之焊球可在後續接合操作中輕輕地按壓至接合墊上。藉此,本發明的引線接合方法可有效地減少接合墊的消耗(幾乎不噴濺)並盡可能地維持接合墊的原始厚度,並且還可解決接合墊下方的結構在焊球以高壓被按壓至接合墊時發生損壞的習知問題。
雖然本發明已以實施方式揭露如上,然其並不用以限定本發明,任何熟習此技藝者,在不脫離本發明的精神和範圍內,當可作各種的更動與潤飾,因此本發明的保護範圍當視後附的申請專利範圍所界定者為準。
S101~S104‧‧‧步驟
Claims (8)
- 一種引線接合方法,包含:形成一焊球(Free Air Ball,FAB)於一金屬線的一端;將該焊球按壓至位於一基板上之一金屬指狀結構的一平面上以使該焊球變形;使變形之該焊球接觸位於該基板上之一金屬墊,其中該金屬墊由一第一材料所製成且該金屬線由一第二材料所製成,並且該第一材料的硬度小於該第二材料的硬度;以及將變形之該焊球接合至該金屬墊上。
- 如請求項第1項所述之引線接合方法,其中該使變形之該焊球接觸該金屬墊係施加一力量而執行。
- 如請求項第2項所述之引線接合方法,其中該使變形之該焊球接觸該金屬墊以及該將變形之該焊球接合至該金屬墊上係實質上同時執行。
- 如請求項第2項所述之引線接合方法,其中該將該焊球按壓至該平面上所施加之一力量,係大於該使變形之該焊球接觸該金屬墊所施加之該力量。
- 如請求項第1項所述之引線接合方法,其中該將該焊球按壓至該平面上係在該焊球上形成對應該平面之一平坦接觸面。
- 如請求項第5項所述之引線接合方法,其中該將變形之該焊球接合至該金屬墊上係包含將該平坦接觸面接合至該金屬墊上。
- 如請求項第1項所述之引線接合方法,其中該將變形之該焊球接合至該金屬墊上係在變形之該焊球與該金屬墊之間的一接觸界面形成一介金屬化合物(Intermetallic Compound,IMC)。
- 如請求項第1項所述之引線接合方法,其中該將變形之該焊球接合至該金屬墊上係藉由對變形之該焊球與該金屬墊之間的該接觸界面施加一超音波能量而執行。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/239,809 US9799624B1 (en) | 2016-08-17 | 2016-08-17 | Wire bonding method and wire bonding structure |
US15/239,809 | 2016-08-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI604543B true TWI604543B (zh) | 2017-11-01 |
TW201810470A TW201810470A (zh) | 2018-03-16 |
Family
ID=60082261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105133452A TWI604543B (zh) | 2016-08-17 | 2016-10-17 | 引線接合方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9799624B1 (zh) |
CN (1) | CN107768262A (zh) |
TW (1) | TWI604543B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11830836B2 (en) * | 2021-10-04 | 2023-11-28 | Nanya Technology Corporation | Semiconductor device with wire bond and method for preparing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200636890A (en) * | 2005-02-23 | 2006-10-16 | Kulicke & Soffa Ind Inc | Apparatus and method for bonding wires |
TW201521130A (zh) * | 2013-11-26 | 2015-06-01 | Freescale Semiconductor Inc | 銅球接合介面結構及形成 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100734269B1 (ko) * | 2005-07-29 | 2007-07-02 | 삼성전자주식회사 | 와이어 본딩 장치 |
CN101764071A (zh) * | 2008-12-23 | 2010-06-30 | 日月光封装测试(上海)有限公司 | 导线接合方法和打线装置 |
JP5088981B1 (ja) * | 2011-12-21 | 2012-12-05 | 田中電子工業株式会社 | Pd被覆銅ボールボンディングワイヤ |
US9324675B2 (en) * | 2014-04-25 | 2016-04-26 | Freescale Semiconductor, Inc. | Structures for reducing corrosion in wire bonds |
CN104241152B (zh) * | 2014-08-21 | 2017-03-15 | 深圳电通纬创微电子股份有限公司 | 基于铜球预压平的芯片封装方法 |
-
2016
- 2016-08-17 US US15/239,809 patent/US9799624B1/en active Active
- 2016-10-17 TW TW105133452A patent/TWI604543B/zh active
- 2016-12-20 CN CN201611184103.3A patent/CN107768262A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200636890A (en) * | 2005-02-23 | 2006-10-16 | Kulicke & Soffa Ind Inc | Apparatus and method for bonding wires |
TW201521130A (zh) * | 2013-11-26 | 2015-06-01 | Freescale Semiconductor Inc | 銅球接合介面結構及形成 |
Also Published As
Publication number | Publication date |
---|---|
US9799624B1 (en) | 2017-10-24 |
CN107768262A (zh) | 2018-03-06 |
TW201810470A (zh) | 2018-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5624649B2 (ja) | 基板に取り付けられたスタッドバンプを伴う、フリップチップパッケージング用の可融性入出力相互接続システムおよび方法 | |
JP4768343B2 (ja) | 半導体素子の実装方法 | |
JP6448388B2 (ja) | 電力用半導体装置 | |
TWI337394B (en) | Method of packaging semiconductor die | |
TWI497657B (zh) | 打線結構及其製作方法 | |
US20200335474A1 (en) | Chip Packaging Structure and Related Inner Lead Bonding Method | |
TW200416915A (en) | Wirebonding insulated wire | |
TWI604543B (zh) | 引線接合方法 | |
TW201411793A (zh) | 半導體裝置及其製造方法 | |
JP3116412B2 (ja) | 半導体装置のバンプ電極形成方法、表示装置及び電子印字装置 | |
TWI546922B (zh) | 半導體裝置及其製造方法 | |
US20100126763A1 (en) | Wire bonding method, electronic apparatus, and method of manufacturing same | |
JP5812123B2 (ja) | 電子機器の製造方法 | |
US20070262119A1 (en) | Wire bonding process for insulated wires | |
US10629556B2 (en) | Composite bump, method for forming composite bump, and substrate | |
JP5884625B2 (ja) | 半導体デバイス | |
CN102789995B (zh) | 制作金属凸块与熔接金属的制程方法 | |
US20180211930A1 (en) | Semiconductor device and method for manufacturing the same | |
Suppiah et al. | A short review on thermosonic flip chip bonding | |
JP4378227B2 (ja) | フリップチップ実装方法 | |
JP7166490B2 (ja) | 半導体装置及びその製造方法 | |
JP2000223534A (ja) | 半導体実装装置及び半導体チップの実装方法 | |
JP2013162070A (ja) | 半導体装置および半導体装置の製造方法 | |
JPH11163027A (ja) | 二工程ワイヤ接合プロセス | |
JP3041318B2 (ja) | 半導体装置のボンディング装置 |