JP2022532818A - 可変キャパシタ - Google Patents
可変キャパシタ Download PDFInfo
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- JP2022532818A JP2022532818A JP2021546337A JP2021546337A JP2022532818A JP 2022532818 A JP2022532818 A JP 2022532818A JP 2021546337 A JP2021546337 A JP 2021546337A JP 2021546337 A JP2021546337 A JP 2021546337A JP 2022532818 A JP2022532818 A JP 2022532818A
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- variable capacitor
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- 239000003990 capacitor Substances 0.000 title claims abstract description 99
- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 30
- 239000002019 doping agent Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0808—Varactor diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
12 絶縁構造
14 ウェル領域
16 ゲート誘電層
18 第1のゲート材料層
20 スペーサ構造
22 ソース/ドレン領域
24 第2のゲート材料層
100、200 可変キャパシタ
D1 第1の方向、厚さ方向
D2 第2の方向
D3 第3の方向
G ゲート電極
V1 第1の電圧端子
V2 第2の電圧端子
Claims (20)
- 半導体基板と、
前記半導体基板に配置されたウェル領域と、
前記半導体基板に配置されたゲート電極であって、前記ゲート電極は、前記半導体基板の厚さ方向において前記ウェル領域の一部と重なり、前記ゲート電極の導電型が前記ウェル領域の導電型と相補的である、ゲート電極と
を備える可変キャパシタ。 - 前記ウェル領域はn型ウェル領域であり、前記ゲート電極はp型ゲート電極である、請求項1に記載の可変キャパシタ。
- 前記ゲート電極はp型ドープポリシリコンを含む、請求項2に記載の可変キャパシタ。
- 前記ゲート電極の仕事関数が前記半導体基板の伝導帯より大きい、請求項2に記載の可変キャパシタ。
- 前記ゲート電極の仕事関数が5eV以上である、請求項2に記載の可変キャパシタ。
- 前記ウェル領域に配置され、前記ゲート電極の2つの反対の側にそれぞれ配置された2つのソース/ドレン領域をさらに備え、前記2つのソース/ドレン領域の各々はn型ドープ領域を備える、請求項2に記載の可変キャパシタ。
- 前記2つのソース/ドレン領域は互いと電気的に接続される、請求項6に記載の可変キャパシタ。
- 前記ウェル領域はp型ウェル領域であり、前記ゲート電極はn型ゲート電極である、請求項1に記載の可変キャパシタ。
- 前記ゲート電極はn型ドープポリシリコンを含む、請求項8に記載の可変キャパシタ。
- 前記ゲート電極の仕事関数が前記半導体基板の価電子帯より小さい、請求項8に記載の可変キャパシタ。
- 前記ゲート電極の仕事関数が4.1eV以下である、請求項8に記載の可変キャパシタ。
- 前記ウェル領域に配置され、前記ゲート電極の2つの反対の側にそれぞれ配置された2つのソース/ドレン領域をさらに備え、前記2つのソース/ドレン領域の各々はp型ドープ領域を備える、請求項8に記載の可変キャパシタ。
- 前記2つのソース/ドレン領域は互いと電気的に接続される、請求項12に記載の可変キャパシタ。
- 前記半導体基板はシリコン半導体基板を含む、請求項1に記載の可変キャパシタ。
- 半導体基板と、
前記半導体基板に配置されたn型ウェル領域と、
前記半導体基板に配置されたゲート電極であって、前記ゲート電極は、前記半導体基板の厚さ方向において前記n型ウェル領域の一部と重なり、前記ゲート電極の仕事関数が前記半導体基板の伝導帯より大きい、ゲート電極と
を備える可変キャパシタ。 - 前記ゲート電極は金属ゲート電極を備え、前記ゲート電極の仕事関数が5eV以上である、請求項15に記載の可変キャパシタ。
- 前記n型ウェル領域に配置され、前記ゲート電極の2つの反対の側にそれぞれ配置された2つのソース/ドレン領域をさらに備え、前記2つのソース/ドレン領域の各々はn型ドープ領域を備える、請求項15に記載の可変キャパシタ。
- 半導体基板と、
前記半導体基板に配置されたp型ウェル領域と、
前記半導体基板に配置されたゲート電極であって、前記ゲート電極は、前記半導体基板の厚さ方向において前記p型ウェル領域の一部と重なり、前記ゲート電極の仕事関数が前記半導体基板の価電子帯より小さい、ゲート電極と
を備える可変キャパシタ。 - 前記ゲート電極は金属ゲート電極を備え、前記ゲート電極の仕事関数が4.1eV以下である、請求項18に記載の可変キャパシタ。
- 前記p型ウェル領域に配置され、前記ゲート電極の2つの反対の側にそれぞれ配置された2つのソース/ドレン領域をさらに備え、前記2つのソース/ドレン領域の各々はp型ドープ領域を備える、請求項18に記載の可変キャパシタ。
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JP2023068768A JP2023083456A (ja) | 2020-04-22 | 2023-04-19 | 可変キャパシタ |
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PCT/CN2020/086118 WO2021212362A1 (en) | 2020-04-22 | 2020-04-22 | Variable capacitor |
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JP2023068768A Division JP2023083456A (ja) | 2020-04-22 | 2023-04-19 | 可変キャパシタ |
Publications (2)
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JP2022532818A true JP2022532818A (ja) | 2022-07-20 |
JP7267437B2 JP7267437B2 (ja) | 2023-05-01 |
Family
ID=72189659
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JP2021546337A Active JP7267437B2 (ja) | 2020-04-22 | 2020-04-22 | 可変キャパシタ |
JP2023068768A Pending JP2023083456A (ja) | 2020-04-22 | 2023-04-19 | 可変キャパシタ |
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JP2023068768A Pending JP2023083456A (ja) | 2020-04-22 | 2023-04-19 | 可変キャパシタ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210336069A1 (ja) |
EP (1) | EP3942614A4 (ja) |
JP (2) | JP7267437B2 (ja) |
KR (1) | KR20210132026A (ja) |
CN (2) | CN113066872A (ja) |
TW (2) | TWI779297B (ja) |
WO (1) | WO2021212362A1 (ja) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004152825A (ja) * | 2002-10-29 | 2004-05-27 | Seiko Epson Corp | Mis型半導体装置の製造方法及び半導体製造装置 |
JP2007019396A (ja) * | 2005-07-11 | 2007-01-25 | Renesas Technology Corp | Mos構造を有する半導体装置およびその製造方法 |
JP2007103408A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | 放射線検出器 |
JP2008091451A (ja) * | 2006-09-29 | 2008-04-17 | Toshiba Corp | 半導体装置 |
JP2008244082A (ja) * | 2007-03-27 | 2008-10-09 | Fujitsu Microelectronics Ltd | 半導体可変容量素子及びその製造方法 |
JP2009111414A (ja) * | 2009-01-05 | 2009-05-21 | Fujitsu Ltd | 半導体装置の製造方法 |
WO2009084376A1 (ja) * | 2007-12-28 | 2009-07-09 | Nec Corporation | 半導体装置及びその製造方法 |
JP2016146382A (ja) * | 2015-02-06 | 2016-08-12 | 国立大学法人名古屋大学 | Mosキャパシタ及びmosfet |
JP2017168823A (ja) * | 2016-03-14 | 2017-09-21 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JP2019097014A (ja) * | 2017-11-22 | 2019-06-20 | セイコーエプソン株式会社 | 温度補償型水晶発振器及びそれを用いた電子機器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU638812B2 (en) * | 1990-04-16 | 1993-07-08 | Digital Equipment Corporation | A method of operating a semiconductor device |
KR960008735B1 (en) * | 1993-04-29 | 1996-06-29 | Samsung Electronics Co Ltd | Mos transistor and the manufacturing method thereof |
SE515783C2 (sv) * | 1997-09-11 | 2001-10-08 | Ericsson Telefon Ab L M | Elektriska anordningar jämte förfarande för deras tillverkning |
JP2004214408A (ja) * | 2002-12-27 | 2004-07-29 | Nec Electronics Corp | 電圧制御可変容量素子 |
WO2004079828A1 (ja) * | 2003-03-03 | 2004-09-16 | Fujitsu Limited | Mos型可変容量素子 |
CN1314133C (zh) * | 2003-06-20 | 2007-05-02 | 北京大学 | 双沟道积累型变容管及其制造方法 |
JP4636785B2 (ja) * | 2003-08-28 | 2011-02-23 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US7705428B2 (en) * | 2006-03-21 | 2010-04-27 | United Microelectronics Corp. | Varactor |
US7741672B2 (en) * | 2007-11-01 | 2010-06-22 | International Business Machines Corporation | Bridged gate FinFet |
CN101834213A (zh) * | 2009-03-13 | 2010-09-15 | 中芯国际集成电路制造(上海)有限公司 | 半导体可变电容 |
US8907427B2 (en) * | 2012-11-05 | 2014-12-09 | Stmicroelectronics, Inc. | Semiconductor device including low-K dielectric cap layer for gate electrodes and related methods |
KR102345676B1 (ko) * | 2015-09-09 | 2021-12-31 | 에스케이하이닉스 주식회사 | 모스 버렉터 및 이를 포함하는 반도체 집적소자 |
US10672783B2 (en) * | 2017-08-30 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit and method for manufacturing the same |
-
2020
- 2020-04-22 WO PCT/CN2020/086118 patent/WO2021212362A1/en unknown
- 2020-04-22 KR KR1020217025027A patent/KR20210132026A/ko not_active IP Right Cessation
- 2020-04-22 EP EP20913053.3A patent/EP3942614A4/en active Pending
- 2020-04-22 CN CN202110317371.2A patent/CN113066872A/zh active Pending
- 2020-04-22 CN CN202080000812.XA patent/CN111602254B/zh active Active
- 2020-04-22 JP JP2021546337A patent/JP7267437B2/ja active Active
- 2020-06-05 US US16/893,447 patent/US20210336069A1/en active Pending
- 2020-06-09 TW TW109119256A patent/TWI779297B/zh active
- 2020-06-09 TW TW111131492A patent/TW202247479A/zh unknown
-
2023
- 2023-04-19 JP JP2023068768A patent/JP2023083456A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004152825A (ja) * | 2002-10-29 | 2004-05-27 | Seiko Epson Corp | Mis型半導体装置の製造方法及び半導体製造装置 |
JP2007019396A (ja) * | 2005-07-11 | 2007-01-25 | Renesas Technology Corp | Mos構造を有する半導体装置およびその製造方法 |
JP2007103408A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | 放射線検出器 |
JP2008091451A (ja) * | 2006-09-29 | 2008-04-17 | Toshiba Corp | 半導体装置 |
JP2008244082A (ja) * | 2007-03-27 | 2008-10-09 | Fujitsu Microelectronics Ltd | 半導体可変容量素子及びその製造方法 |
WO2009084376A1 (ja) * | 2007-12-28 | 2009-07-09 | Nec Corporation | 半導体装置及びその製造方法 |
JP2009111414A (ja) * | 2009-01-05 | 2009-05-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2016146382A (ja) * | 2015-02-06 | 2016-08-12 | 国立大学法人名古屋大学 | Mosキャパシタ及びmosfet |
JP2017168823A (ja) * | 2016-03-14 | 2017-09-21 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JP2019097014A (ja) * | 2017-11-22 | 2019-06-20 | セイコーエプソン株式会社 | 温度補償型水晶発振器及びそれを用いた電子機器 |
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CN113066872A (zh) | 2021-07-02 |
JP7267437B2 (ja) | 2023-05-01 |
TW202247479A (zh) | 2022-12-01 |
TWI779297B (zh) | 2022-10-01 |
WO2021212362A1 (en) | 2021-10-28 |
US20210336069A1 (en) | 2021-10-28 |
TW202141804A (zh) | 2021-11-01 |
EP3942614A1 (en) | 2022-01-26 |
CN111602254B (zh) | 2021-03-23 |
KR20210132026A (ko) | 2021-11-03 |
EP3942614A4 (en) | 2022-08-03 |
JP2023083456A (ja) | 2023-06-15 |
CN111602254A (zh) | 2020-08-28 |
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