JP2022123516A - 太陽電池用ガラス基板及び太陽電池 - Google Patents

太陽電池用ガラス基板及び太陽電池 Download PDF

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Publication number
JP2022123516A
JP2022123516A JP2021020874A JP2021020874A JP2022123516A JP 2022123516 A JP2022123516 A JP 2022123516A JP 2021020874 A JP2021020874 A JP 2021020874A JP 2021020874 A JP2021020874 A JP 2021020874A JP 2022123516 A JP2022123516 A JP 2022123516A
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JP
Japan
Prior art keywords
transparent film
film layer
functional transparent
solar cell
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021020874A
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English (en)
Japanese (ja)
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JP2022123516A5 (enExample
Inventor
至弘 岩田
Yukihiro Iwata
卓 立川
Taku Tachikawa
亮 高橋
Akira Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2021020874A priority Critical patent/JP2022123516A/ja
Priority to CN202210134278.2A priority patent/CN114927590A/zh
Publication of JP2022123516A publication Critical patent/JP2022123516A/ja
Publication of JP2022123516A5 publication Critical patent/JP2022123516A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
JP2021020874A 2021-02-12 2021-02-12 太陽電池用ガラス基板及び太陽電池 Pending JP2022123516A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021020874A JP2022123516A (ja) 2021-02-12 2021-02-12 太陽電池用ガラス基板及び太陽電池
CN202210134278.2A CN114927590A (zh) 2021-02-12 2022-02-14 太阳能电池用玻璃基板和太阳能电池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021020874A JP2022123516A (ja) 2021-02-12 2021-02-12 太陽電池用ガラス基板及び太陽電池

Publications (2)

Publication Number Publication Date
JP2022123516A true JP2022123516A (ja) 2022-08-24
JP2022123516A5 JP2022123516A5 (enExample) 2023-03-07

Family

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Family Applications (1)

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JP2021020874A Pending JP2022123516A (ja) 2021-02-12 2021-02-12 太陽電池用ガラス基板及び太陽電池

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Country Link
JP (1) JP2022123516A (enExample)
CN (1) CN114927590A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116002988A (zh) * 2022-12-12 2023-04-25 玻璃新材料创新中心(安徽)有限公司 一种太阳能电池用透明导电膜玻璃及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7020458B2 (ja) * 2019-07-12 2022-02-16 Ａｇｃ株式会社 膜付きガラス基板及びその製造方法
CN116669448B (zh) * 2023-07-28 2024-02-13 淄博金晶新能源有限公司 钙钛矿太阳能电池用tco导电膜玻璃及其制备工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021012948A (ja) * 2019-07-05 2021-02-04 Ａｇｃ株式会社 透明電極基板及び太陽電池

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1732139B1 (en) * 2004-03-25 2018-12-12 Kaneka Corporation Method for producing a substrate for thin-film solar cell
CN104600130A (zh) * 2015-01-13 2015-05-06 福建铂阳精工设备有限公司 一种硅基薄膜太阳能电池及其制备方法
KR102075687B1 (ko) * 2019-06-05 2020-02-10 주식회사 이건창호 균일한 색상을 가지는 건축용 유리판넬
JP2021012949A (ja) * 2019-07-05 2021-02-04 Ａｇｃ株式会社 透明電極基板及び太陽電池

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021012948A (ja) * 2019-07-05 2021-02-04 Ａｇｃ株式会社 透明電極基板及び太陽電池

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116002988A (zh) * 2022-12-12 2023-04-25 玻璃新材料创新中心(安徽)有限公司 一种太阳能电池用透明导电膜玻璃及其制备方法

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CN114927590A (zh) 2022-08-19

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