JP2022051034A5 - - Google Patents
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- Publication number
- JP2022051034A5 JP2022051034A5 JP2020157282A JP2020157282A JP2022051034A5 JP 2022051034 A5 JP2022051034 A5 JP 2022051034A5 JP 2020157282 A JP2020157282 A JP 2020157282A JP 2020157282 A JP2020157282 A JP 2020157282A JP 2022051034 A5 JP2022051034 A5 JP 2022051034A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- etching method
- protective film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 37
- 230000001681 protective effect Effects 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 claims description 2
- 229910039444 MoC Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 34
- 239000007789 gas Substances 0.000 claims 26
- 239000000758 substrate Substances 0.000 claims 14
- 238000005108 dry cleaning Methods 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 4
- 229930195733 hydrocarbon Natural products 0.000 claims 3
- 150000002430 hydrocarbons Chemical class 0.000 claims 3
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 239000002052 molecular layer Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910015221 MoCl5 Inorganic materials 0.000 description 1
- 229910019891 RuCl3 Inorganic materials 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020157282A JP7374058B2 (ja) | 2020-09-18 | 2020-09-18 | エッチング方法及びプラズマ処理装置 |
| CN202111046522.1A CN114203507A (zh) | 2020-09-18 | 2021-09-06 | 蚀刻方法及等离子体处理装置 |
| KR1020210118925A KR20220038273A (ko) | 2020-09-18 | 2021-09-07 | 에칭 방법 및 플라즈마 처리 장치 |
| TW110133176A TWI895499B (zh) | 2020-09-18 | 2021-09-07 | 蝕刻方法及電漿處理裝置 |
| US17/469,895 US12347651B2 (en) | 2020-09-18 | 2021-09-09 | Etching method and plasma processing apparatus |
| JP2023182663A JP7645963B2 (ja) | 2020-09-18 | 2023-10-24 | プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020157282A JP7374058B2 (ja) | 2020-09-18 | 2020-09-18 | エッチング方法及びプラズマ処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023182663A Division JP7645963B2 (ja) | 2020-09-18 | 2023-10-24 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022051034A JP2022051034A (ja) | 2022-03-31 |
| JP2022051034A5 true JP2022051034A5 (enExample) | 2023-02-14 |
| JP7374058B2 JP7374058B2 (ja) | 2023-11-06 |
Family
ID=80645993
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020157282A Active JP7374058B2 (ja) | 2020-09-18 | 2020-09-18 | エッチング方法及びプラズマ処理装置 |
| JP2023182663A Active JP7645963B2 (ja) | 2020-09-18 | 2023-10-24 | プラズマ処理装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023182663A Active JP7645963B2 (ja) | 2020-09-18 | 2023-10-24 | プラズマ処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12347651B2 (enExample) |
| JP (2) | JP7374058B2 (enExample) |
| KR (1) | KR20220038273A (enExample) |
| CN (1) | CN114203507A (enExample) |
| TW (1) | TWI895499B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250205788A1 (en) | 2022-03-28 | 2025-06-26 | Kyocera Corporation | Cemented carbide and coated tool and cutting tool each using the same |
| JP2023171269A (ja) * | 2022-05-19 | 2023-12-01 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理システム |
| TW202401563A (zh) * | 2022-06-10 | 2024-01-01 | 日商東京威力科創股份有限公司 | 蝕刻方法及電漿處理系統 |
| JP7536941B2 (ja) * | 2022-08-30 | 2024-08-20 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| KR102733623B1 (ko) * | 2022-11-11 | 2024-11-25 | 세메스 주식회사 | 기판 처리 장치의 챔버 내부 표면의 보호막 형성 방법 |
| US20250201573A1 (en) * | 2023-12-15 | 2025-06-19 | Applied Materials, Inc. | Methods for reducing photoresist and carbon etch rates in an icp process chamber using a silicon-based chamber pre-coat |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166030A (ja) * | 1985-01-17 | 1986-07-26 | Matsushita Electronics Corp | レジストエツチ速度抑制方法 |
| US5085727A (en) * | 1990-05-21 | 1992-02-04 | Applied Materials, Inc. | Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion |
| US5486235A (en) * | 1993-08-09 | 1996-01-23 | Applied Materials, Inc. | Plasma dry cleaning of semiconductor processing chambers |
| EP0648858A1 (en) * | 1993-10-15 | 1995-04-19 | Applied Materials, Inc. | Methods of coating plasma etch chambers and apparatus for plasma etching workpieces |
| US6071573A (en) | 1997-12-30 | 2000-06-06 | Lam Research Corporation | Process for precoating plasma CVD reactors |
| US6322716B1 (en) * | 1999-08-30 | 2001-11-27 | Cypress Semiconductor Corp. | Method for conditioning a plasma etch chamber |
| JP3720777B2 (ja) | 2002-02-20 | 2005-11-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置用保護膜の取付け方法 |
| US7204913B1 (en) * | 2002-06-28 | 2007-04-17 | Lam Research Corporation | In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control |
| US7226869B2 (en) | 2004-10-29 | 2007-06-05 | Lam Research Corporation | Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing |
| JP2007005381A (ja) | 2005-06-21 | 2007-01-11 | Matsushita Electric Ind Co Ltd | プラズマエッチング方法、及びプラズマエッチング装置 |
| JP2009188257A (ja) | 2008-02-07 | 2009-08-20 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体 |
| JP5450187B2 (ja) | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US9245762B2 (en) * | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
| US10192717B2 (en) * | 2014-07-21 | 2019-01-29 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| JP6298391B2 (ja) | 2014-10-07 | 2018-03-20 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP2017045849A (ja) * | 2015-08-26 | 2017-03-02 | 東京エレクトロン株式会社 | シーズニング方法およびエッチング方法 |
| JP2017098323A (ja) * | 2015-11-19 | 2017-06-01 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| JP6632426B2 (ja) | 2016-02-29 | 2020-01-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプリコート処理方法 |
| JP6630649B2 (ja) | 2016-09-16 | 2020-01-15 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| CN116978782A (zh) | 2017-05-12 | 2023-10-31 | 应用材料公司 | 在基板和腔室部件上沉积金属硅化物层 |
| US11328909B2 (en) * | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| KR20250110938A (ko) * | 2018-10-19 | 2025-07-21 | 램 리써치 코포레이션 | 반도체 프로세싱을 위한 챔버 컴포넌트들의 인 시츄 (in situ) 보호 코팅 |
| JP7222940B2 (ja) | 2019-02-18 | 2023-02-15 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20210111033A1 (en) * | 2019-10-10 | 2021-04-15 | Applied Materials, Inc. | Isotropic silicon nitride removal |
-
2020
- 2020-09-18 JP JP2020157282A patent/JP7374058B2/ja active Active
-
2021
- 2021-09-06 CN CN202111046522.1A patent/CN114203507A/zh active Pending
- 2021-09-07 KR KR1020210118925A patent/KR20220038273A/ko active Pending
- 2021-09-07 TW TW110133176A patent/TWI895499B/zh active
- 2021-09-09 US US17/469,895 patent/US12347651B2/en active Active
-
2023
- 2023-10-24 JP JP2023182663A patent/JP7645963B2/ja active Active
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