JP7374058B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

Info

Publication number
JP7374058B2
JP7374058B2 JP2020157282A JP2020157282A JP7374058B2 JP 7374058 B2 JP7374058 B2 JP 7374058B2 JP 2020157282 A JP2020157282 A JP 2020157282A JP 2020157282 A JP2020157282 A JP 2020157282A JP 7374058 B2 JP7374058 B2 JP 7374058B2
Authority
JP
Japan
Prior art keywords
film
chamber
substrate
protective film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020157282A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022051034A (ja
JP2022051034A5 (enExample
Inventor
康基 田中
龍 永井
貴俊 大類
隆太郎 須田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2020157282A priority Critical patent/JP7374058B2/ja
Priority to CN202111046522.1A priority patent/CN114203507A/zh
Priority to TW110133176A priority patent/TWI895499B/zh
Priority to KR1020210118925A priority patent/KR20220038273A/ko
Priority to US17/469,895 priority patent/US12347651B2/en
Publication of JP2022051034A publication Critical patent/JP2022051034A/ja
Publication of JP2022051034A5 publication Critical patent/JP2022051034A5/ja
Priority to JP2023182663A priority patent/JP7645963B2/ja
Application granted granted Critical
Publication of JP7374058B2 publication Critical patent/JP7374058B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
JP2020157282A 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置 Active JP7374058B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2020157282A JP7374058B2 (ja) 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置
CN202111046522.1A CN114203507A (zh) 2020-09-18 2021-09-06 蚀刻方法及等离子体处理装置
KR1020210118925A KR20220038273A (ko) 2020-09-18 2021-09-07 에칭 방법 및 플라즈마 처리 장치
TW110133176A TWI895499B (zh) 2020-09-18 2021-09-07 蝕刻方法及電漿處理裝置
US17/469,895 US12347651B2 (en) 2020-09-18 2021-09-09 Etching method and plasma processing apparatus
JP2023182663A JP7645963B2 (ja) 2020-09-18 2023-10-24 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020157282A JP7374058B2 (ja) 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023182663A Division JP7645963B2 (ja) 2020-09-18 2023-10-24 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2022051034A JP2022051034A (ja) 2022-03-31
JP2022051034A5 JP2022051034A5 (enExample) 2023-02-14
JP7374058B2 true JP7374058B2 (ja) 2023-11-06

Family

ID=80645993

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020157282A Active JP7374058B2 (ja) 2020-09-18 2020-09-18 エッチング方法及びプラズマ処理装置
JP2023182663A Active JP7645963B2 (ja) 2020-09-18 2023-10-24 プラズマ処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023182663A Active JP7645963B2 (ja) 2020-09-18 2023-10-24 プラズマ処理装置

Country Status (5)

Country Link
US (1) US12347651B2 (enExample)
JP (2) JP7374058B2 (enExample)
KR (1) KR20220038273A (enExample)
CN (1) CN114203507A (enExample)
TW (1) TWI895499B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112023001600T5 (de) 2022-03-28 2025-01-23 Kyocera Corporation Hartmetall und beschichtetes werkzeug und schneidwerkzeug unter verwendung davon
JP2023171269A (ja) * 2022-05-19 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
TW202401563A (zh) * 2022-06-10 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理系統
JP7536941B2 (ja) * 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102733623B1 (ko) * 2022-11-11 2024-11-25 세메스 주식회사 기판 처리 장치의 챔버 내부 표면의 보호막 형성 방법
US20250201573A1 (en) * 2023-12-15 2025-06-19 Applied Materials, Inc. Methods for reducing photoresist and carbon etch rates in an icp process chamber using a silicon-based chamber pre-coat

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243373A (ja) 2002-02-20 2003-08-29 Hitachi High-Technologies Corp プラズマ処理装置とプラズマ処理装置用保護膜及びその取付け方法
JP2007005381A (ja) 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd プラズマエッチング方法、及びプラズマエッチング装置
JP2008519431A (ja) 2004-10-29 2008-06-05 ラム リサーチ コーポレーション シリコンまたはシリコンカーバイド電極表面をプラズマエッチング処理中の形態改質から保護する方法
JP2011192872A (ja) 2010-03-16 2011-09-29 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2017157627A (ja) 2016-02-29 2017-09-07 東京エレクトロン株式会社 プラズマ処理装置及びプリコート処理方法
JP2018046216A (ja) 2016-09-16 2018-03-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2020136669A (ja) 2019-02-18 2020-08-31 東京エレクトロン株式会社 エッチング方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166030A (ja) * 1985-01-17 1986-07-26 Matsushita Electronics Corp レジストエツチ速度抑制方法
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
EP0648858A1 (en) * 1993-10-15 1995-04-19 Applied Materials, Inc. Methods of coating plasma etch chambers and apparatus for plasma etching workpieces
US6071573A (en) 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6322716B1 (en) * 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US7204913B1 (en) * 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
JP2009188257A (ja) 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
US9245762B2 (en) * 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US10192717B2 (en) * 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
JP6298391B2 (ja) 2014-10-07 2018-03-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017045849A (ja) * 2015-08-26 2017-03-02 東京エレクトロン株式会社 シーズニング方法およびエッチング方法
JP2017098323A (ja) * 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法
JP7221879B2 (ja) 2017-05-12 2023-02-14 アプライド マテリアルズ インコーポレイテッド 基板及びチャンバ部品上への金属ケイ素化合物層の堆積
US11328909B2 (en) * 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
SG11202103979UA (en) * 2018-10-19 2021-05-28 Lam Res Corp In situ protective coating of chamber components for semiconductor processing
US20210111033A1 (en) * 2019-10-10 2021-04-15 Applied Materials, Inc. Isotropic silicon nitride removal

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243373A (ja) 2002-02-20 2003-08-29 Hitachi High-Technologies Corp プラズマ処理装置とプラズマ処理装置用保護膜及びその取付け方法
JP2008519431A (ja) 2004-10-29 2008-06-05 ラム リサーチ コーポレーション シリコンまたはシリコンカーバイド電極表面をプラズマエッチング処理中の形態改質から保護する方法
JP2007005381A (ja) 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd プラズマエッチング方法、及びプラズマエッチング装置
JP2011192872A (ja) 2010-03-16 2011-09-29 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2017157627A (ja) 2016-02-29 2017-09-07 東京エレクトロン株式会社 プラズマ処理装置及びプリコート処理方法
JP2018046216A (ja) 2016-09-16 2018-03-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2020136669A (ja) 2019-02-18 2020-08-31 東京エレクトロン株式会社 エッチング方法

Also Published As

Publication number Publication date
JP2022051034A (ja) 2022-03-31
US20220093367A1 (en) 2022-03-24
JP2023182828A (ja) 2023-12-26
CN114203507A (zh) 2022-03-18
KR20220038273A (ko) 2022-03-28
TW202213506A (zh) 2022-04-01
JP7645963B2 (ja) 2025-03-14
TWI895499B (zh) 2025-09-01
US12347651B2 (en) 2025-07-01

Similar Documents

Publication Publication Date Title
JP7374058B2 (ja) エッチング方法及びプラズマ処理装置
JP7599872B2 (ja) エッチング方法及びプラズマ処理装置
JP7672943B2 (ja) プラズマ処理装置及び基板処理方法
JP7604145B2 (ja) 基板処理方法及びプラズマ処理装置
WO2022234640A1 (ja) 基板処理方法及び基板処理装置
CN112786440A (zh) 蚀刻方法及等离子体处理装置
US20230170189A1 (en) Etching method and plasma processing apparatus
KR102890137B1 (ko) 에칭 방법, 기판 처리 장치, 및 기판 처리 시스템
US12112954B2 (en) Etching method, substrate processing apparatus, and substrate processing system
CN112786441A (zh) 蚀刻方法及等离子体处理装置
KR102891420B1 (ko) 에칭 방법, 기판 처리 장치, 및 기판 처리 시스템
JP7343461B2 (ja) エッチング方法及びプラズマ処理装置
JP7700221B2 (ja) 基板処理方法及び基板処理装置
TWI893237B (zh) 蝕刻方法
JP7641170B2 (ja) 基板処理装置及び基板処理方法
TWI899193B (zh) 基板處理方法及電漿處理裝置
US20230100292A1 (en) Plasma processing method and plasma processing system
US20240234097A1 (en) Etching method and plasma processing apparatus
JP2024098961A (ja) エッチング方法及びプラズマ処理装置
TW202245051A (zh) 基板處理方法及基板處理裝置
WO2025150267A1 (ja) プラズマ処理装置及びプラズマ処理方法
TW202229613A (zh) 於階梯式結構上沉積材料的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230203

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230203

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20230203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230307

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230419

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230530

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230727

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230926

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231024

R150 Certificate of patent or registration of utility model

Ref document number: 7374058

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150