JP6632426B2 - プラズマ処理装置及びプリコート処理方法 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Description
なお、プリコートガスと、成膜処理を行う場合の処理ガスとが同一である場合、プリコートガス供給系が省略され、且つ、上記の処理ガス供給系が、プリコートガス供給系の機能を担うようにしても良い。この場合には、処理ガス供給系が、第2のガス供給部に相当する。
11 処理容器
13 載置台
14 シャワープレート
15 カバープレート
19 冷却ジャケット
20 アンテナ
26 マイクロ波発生器
40 仕切り板
40h 開口
50 排気管
70 電極
72 高周波電源
Cnt 制御部
G1 ガス源
G2 ガス源
G3 ガス源
Claims (4)
- 処理容器と、
各々の最大幅がプラズマ励起用ガスのプラズマに対応するシース長の2倍以下である複数の開口を有し、前記処理容器内をプラズマ生成室と処理室とに仕切る仕切り板と、
前記プラズマ生成室へ前記プラズマ励起用ガスを供給する第1のガス供給部と、
前記プラズマ生成室及び前記処理室の少なくともいずれか一方へプリコートガスを供給する第2のガス供給部と、
前記第1のガス供給部によって前記プラズマ生成室へ供給される前記プラズマ励起用ガスのプラズマを発生させる第1のプラズマ源と、
前記第2のガス供給部によって前記プラズマ生成室へ供給されて前記仕切り板の前記複数の開口を介して前記処理室へ流入する前記プリコートガスのプラズマ、又は、前記第2のガス供給部によって前記処理室へ供給される前記プリコートガスのプラズマを発生させる第2のプラズマ源と、
前記プラズマ励起用ガスのプラズマを用いたプラズマ処理が行われる前に、前記第2のプラズマ源を用いて前記処理室内に前記プリコートガスのプラズマを発生させることで、前記仕切り板の前記処理室側の面に対してプリコート処理を行う制御部と
を備えることを特徴とするプラズマ処理装置。 - 前記第1のプラズマ源は、前記プラズマ生成室へマイクロ波を放射することで、前記プラズマ生成室において、前記プラズマ励起用ガスのプラズマを発生させ、
前記第2のプラズマ源は、前記処理室に設けられた電極又は前記処理容器内の載置台に高周波電力を供給することで、前記処理室において、前記プリコートガスのプラズマを発生させることを特徴とする請求項1に記載のプラズマ処理装置。 - 前記第1のプラズマ源は、高周波電力が供給された場合に、前記プラズマ生成室へ誘導電界を形成することで、前記プラズマ生成室において、前記プラズマ励起用ガスのプラズマを発生させ、
前記第2のプラズマ源は、前記処理室に設けられた電極又は前記処理容器内の載置台に高周波電力を供給することで、前記処理室において、前記プリコートガスのプラズマを発生させ、
前記プラズマ処理装置は、前記処理室に設けられた電極又は前記処理容器内の載置台、及び前記第1のプラズマ源のうちいずれか一方に対して、前記第2のプラズマ源からの高周波電力を選択的に供給するスイッチをさらに備えることを特徴とする請求項1に記載のプラズマ処理装置。 - 処理容器と、
各々の最大幅がプラズマ励起用ガスのプラズマに対応するシース長の2倍以下である複数の開口を有し、前記処理容器内をプラズマ生成室と処理室とに仕切る仕切り板と、
前記プラズマ生成室へ前記プラズマ励起用ガスを供給する第1のガス供給部と、
前記プラズマ生成室及び前記処理室の少なくともいずれか一方へプリコートガスを供給する第2のガス供給部と、
前記第1のガス供給部によって前記プラズマ生成室へ供給される前記プラズマ励起用ガスのプラズマを発生させる第1のプラズマ源と、
前記第2のガス供給部によって前記処理室へ供給される前記プリコートガスのプラズマ、又は、前記第2のガス供給部によって前記プラズマ生成室へ供給されて前記仕切り板の前記複数の開口を介して前記処理室へ流入する前記プリコートガスのプラズマを発生させる第2のプラズマ源と
を備えるプラズマ処理装置を用いたプリコート処理方法であって、
前記プラズマ励起用ガスのプラズマを用いたプラズマ処理が行われる前に、前記第2のプラズマ源を用いて前記処理室内に前記プリコートガスのプラズマを発生させることで、前記仕切り板の前記処理室側の面に対してプリコート処理を行う
ことを特徴とするプリコート処理方法。
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US15/442,903 US20170250058A1 (en) | 2016-02-29 | 2017-02-27 | Plasma processing apparatus and precoating method |
KR1020170026287A KR20170101826A (ko) | 2016-02-29 | 2017-02-28 | 플라즈마 처리 장치 및 프리코팅 처리 방법 |
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JP4252749B2 (ja) | 2001-12-13 | 2009-04-08 | 忠弘 大見 | 基板処理方法および基板処理装置 |
JP4256763B2 (ja) * | 2003-11-19 | 2009-04-22 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US7695633B2 (en) * | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US7727906B1 (en) * | 2006-07-26 | 2010-06-01 | Novellus Systems, Inc. | H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift |
US20080193673A1 (en) * | 2006-12-05 | 2008-08-14 | Applied Materials, Inc. | Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
JP5252613B2 (ja) * | 2006-12-25 | 2013-07-31 | 国立大学法人東北大学 | イオン注入装置およびイオン注入方法 |
JP5211332B2 (ja) * | 2008-07-01 | 2013-06-12 | 株式会社ユーテック | プラズマcvd装置、dlc膜及び薄膜の製造方法 |
JP5660804B2 (ja) * | 2010-04-30 | 2015-01-28 | 東京エレクトロン株式会社 | カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置 |
JP2013084552A (ja) * | 2011-09-29 | 2013-05-09 | Tokyo Electron Ltd | ラジカル選択装置及び基板処理装置 |
JP6157385B2 (ja) * | 2014-03-11 | 2017-07-05 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
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2016
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US20200118799A1 (en) | 2020-04-16 |
US10910200B2 (en) | 2021-02-02 |
US20170250058A1 (en) | 2017-08-31 |
KR20170101826A (ko) | 2017-09-06 |
JP2017157627A (ja) | 2017-09-07 |
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