TW202044342A - 使用犧牲性遮罩的選擇性蝕刻 - Google Patents

使用犧牲性遮罩的選擇性蝕刻 Download PDF

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TW202044342A
TW202044342A TW109104676A TW109104676A TW202044342A TW 202044342 A TW202044342 A TW 202044342A TW 109104676 A TW109104676 A TW 109104676A TW 109104676 A TW109104676 A TW 109104676A TW 202044342 A TW202044342 A TW 202044342A
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silicon
regions
silicon oxide
metal
lower oxygen
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TW109104676A
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丹尼爾 彼特
達 李
正義 游
亞歷山大 卡本斯基
凱蒂 納迪
暹華 陳
英姬 李
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美商蘭姆研究公司
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Abstract

提供相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域的方法。犧牲性遮罩相對於氧化矽區域而選擇性地沉積在較低含氧矽區域上。原子層蝕刻相對於較低含氧矽區域上之犧牲性遮罩選擇性地蝕刻氧化矽區域。

Description

使用犧牲性遮罩的選擇性蝕刻
本揭示內容係關於在半導體晶圓上形成半導體裝置之方法。更具體地，本揭示內容係關於氧化矽(SiO2 )的選擇性蝕刻。 [相關申請案之交互參照]
本申請案主張2019年2月14日申請之美國專利申請案第62/805,474號的優先權，其基於全部目的而併於此作為參考。
於形成半導體裝置方面，氧化矽可相對於其他含矽區域被選擇性地蝕刻，且可有其相反情況。
為達到上述且根據本發明之目的，提供用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法。犧牲性遮罩相對於該氧化矽區域而選擇性地沉積於該較低含氧矽區域上。原子層蝕刻相對於該較低含氧矽區域上之該犧牲性遮罩而選擇性地蝕刻該氧化矽區域。
於另一態樣中，提供用於相對於如具有OH表面終端之SiOCN、SiN或金屬氧化物之較高含氧區域而選擇性地蝕刻矽或SiN區域之方法。犧牲性遮罩相對於該矽或SiN區域而選擇性地沉積於該較高含氧區域上。相對於該較高含氧區域上之該犧牲性遮罩，該矽或SiN區域被選擇性地蝕刻。
下文將在本揭示內容之詳細描述中結合以下附圖來更詳細地描述本揭示內容之此等及其他特徵。
本發明現將參考如附圖中所示之一些示例性實施例作詳細描述。在以下描述中，闡述了許多具體細節，以對本發明提供透徹理解。然而，本領域技術人員將顯知可在沒有一些或所有此等具體細節下實施本發明。在其他情況下，眾所周知的製程步驟及/或結構便不詳加敘述，以免不必要地模糊本發明。
圖1是實施例之高階流程圖。提供具有氧化矽區域的結構(步驟104)。圖2A是具有氧化矽區域204之結構200一部分的示意性剖面圖。在此示例中，結構200亦具有矽氧碳氮化物(SiOCN)區域208及矽(Si)區域212。矽區域212可為晶體或多晶、或非晶矽。SiOCN材料包括氮氧化矽(SiON)、碳氧化矽(SiOC)、碳氮化矽(SiCN)、有機氧化矽(SiOCHx)(後段製程(BEOL) 低k)、氮化矽(SiN)、及碳化矽(SiC)。SiOCN區域208及Si區域212被指定為較低含氧矽區域，因為它們具有低於氧化矽區域204之氧濃度。
犧牲性遮罩相對於氧化矽區域204而選擇性地沉積於較低含氧矽區域208、212上(步驟108)。在本實施例中，含碳犧牲性遮罩選擇性地沉積於較低含氧矽區域208、212上。於一示例中，氧化矽區域204、SiOCN區域208及Si區域212之表面係用0.5% 氟化氫(HF)水溶液清潔。氟化氫可為氣態或水溶液。可使用具氬(Ar)、氦(He)或氫(H2 )之預電漿處理，以進一步清潔並活化SiOCN區域208及Si區域212。透過提供50-500瓦射頻(RF)功率，使5-50 sccm甲烷(CH4 )、0-200 sccm H2 及50-500 sccm氬(Ar)之沉積氣體形成為電漿。壓力維持在5-150毫托耳。提供0- 200伏特之偏壓功率。圖2B是已沉積犧牲性遮罩216後之結構200一部分的示意性剖面圖。沉積製程在氧化矽區域204上選擇性地沉積比在SiOCN區域208及Si區域212上更薄的犧牲性遮罩。若需較厚的犧牲性遮罩216，預電漿處理及遮罩沉積則可循環式地重覆複數次。在其他實施例中，惰性氣體Ar可以其他惰性氣體代替，例如氦、氖、氙或氪。
使用原子層蝕刻選擇性地蝕刻氧化矽區域204(步驟112)。在本實施例中，原子層蝕刻提供六氟-2-丁炔(C4 F6 )之反應氣體。C4 F6 在此氧化矽區域204上方選擇性地形成沉積層。沖除反應氣體，並提供Ar之活化氣體。Ar活化沉積層，導致沉積的氟蝕刻氧化矽區域204。原子層蝕刻製程可重覆複數循環。圖2C是完成原子層蝕刻後之結構200的剖面圖。在此示例中，氧化矽區域204被部分地蝕刻，且犧牲性遮罩216已被蝕刻掉。選擇性遮罩沉積(步驟108)及選擇性地蝕刻氧化矽區域204(步驟112)可重覆直到充分地蝕刻氧化矽區域204。
在無選擇性遮罩沉積(步驟108)下，選擇性地蝕刻氧化矽區域204(步驟112)將顯著地蝕刻SiOCN區域208及Si區域212。透過提供選擇性遮罩沉積(步驟108)，氧化矽區域204之蝕刻選擇性(步驟112)被顯著地改善。
在另一實施例中，犧牲性遮罩包括使用原子層沉積(ALD)製程的含金屬層。圖3是另一實施例之高階流程圖。抑制劑層之沉積可在含金屬層沉積之前沉積。此含金屬層可為金屬氧化物、金屬碳化物、金屬氮化物或其混合物。抑制劑及金屬氧化物之沉積循環可被循環。提供具有氧化矽區域的結構(步驟304)。圖4A是具有氧化矽區域404之結構400一部分的示意性剖面圖。在此示例中，結構400亦具有矽氧碳氮化物(SiOCN)區域408及矽(Si)區域412。矽區域412可為晶體或多晶、或非晶矽。SiOCN材料包括SiON、SiOC、SiCN、SiOCHx(BEOL 低k)、SiN及SiC。SiOCN區域408及Si區域412被指定為較低含氧矽區域，因為它們具有低於氧化矽區域之氧濃度。在本實施例中，氧化矽區域404、SiOCN區域408及Si區域412之表面係用0.5%的HF水溶液清潔。氧化矽區域404、SiOCN區域408及Si區域412之表面用去離子水(DIW)沖洗。
抑制劑層相對於SiOCN區域408及Si區域412而選擇性地沉積於氧化矽區域404上 (步驟306)。在此示例中，抑制劑層(414)為自組裝單層，其選擇性地鍵接至表面矽醇基團。抑制劑層之沉積可在液體旋塗製程或氣相製程中進行。抑制劑分子可包括有機矽烷化合物，例如 : HMDS(六甲基二矽氮烷)、ODTS(十八烷基三氯矽烷)、FOTS(1H, 1H, 2H, 2H-全氟辛基三氯矽烷)、烯烴(例如 : 1-十八烯、1-辛烯、1-戊烯)。對於液體製程，前驅物分子係溶解於有機非極性溶劑中。氣相製程係利用分子的蒸氣壓。對於液相製程，使用以下順序：使用異丙醇(IPA)取代DIW，因其與前驅物之非極性溶劑不互溶。隨後，帶有前驅物之非極性溶劑取代IPA。分配前驅物直到達到氧化矽上之表面覆蓋。最後，前驅物被IPA取代，並使用標準IPA乾燥進行乾燥。IPA乾燥可包括如前所述之乾燥方法。描述於美國專利申請案第2017/0345681號中之乾燥方法可用於諸多實施例中。對於氣相製程，將基板放置於加熱基座上。溫度可為20-250℃。壓力可為10毫托耳至30托耳。來自抑制劑之蒸氣流過晶圓，接著從腔室中沖除。例如水或氨氣之催化劑可流過晶圓。該循環可重覆直到獲得所欲膜。圖4B是抑制劑層414已選擇性地沉積在氧化矽區域404上方後之結構400一部分的示意性剖面圖。
犧牲性遮罩相對於氧化矽區域404而選擇性地沉積在較低含氧矽區域408、412上(步驟308)。在本實施例中，利用原子層沉積製程，以提供犧牲性遮罩，其中抑制劑層414增加沉積之選擇性。在本實施例中，犧牲性遮罩之選擇性沉積(步驟308)包括金屬前驅物沉積步驟(前驅物步驟)(步驟310)及反應物步驟(步驟312)之複數循環，以提供選擇性原子層沉積製程。在一些實施例中，在金屬前驅物沉積步驟(步驟310)與反應物步驟(步驟312)之間提供沖除。金屬前驅物沉積步驟(步驟310)提供含金屬前驅物沉積。
在含金屬前驅物層已選擇性地沉積在SiOCN區域408及Si區域412上之後，反應物形成提供於反應物步驟(步驟312)中之含金屬層，例如金屬氧化物、金屬碳化物或金屬氮化物。在諸多實施例中，反應物可為含氧反應物，含氮反應物或含碳反應物。
抑制劑之選擇性沉積減少含金屬層在氧化矽區域404上之沉積，使得更多金屬氧化物、金屬碳化物或金屬氮化物沉積在SiOCN區域408及Si區域412上。抑制劑膜之表面密度決定防止沉積的時間有多長。相較於氧化矽區域404上之整個抑制劑層，抑制劑在SiOCN區域408及Si區域412上之部分沉積允許金屬氧化物、金屬碳化物或金屬氮化物之至少一者得以較早生長。
在一實施例中，金屬氧化物、金屬碳化物及金屬氮化物之至少一者為透過熱ALD製程沉積之二氧化鈦。利用含Ti前驅物(步驟310)與作為反應物之氧化劑(步驟312)之間的循環製程，以沉積二氧化鈦。Ti前驅物可為異丙醇鈦(IV)、四(二乙基醯胺基)鈦(IV)、四(二甲基醯胺基)鈦(IV)、四(乙基甲基醯胺基)鈦(IV)、四氯化鈦。氧化劑可為水(H2 O)蒸氣、氧(O2 )、過氧化物(H2 O2 )或臭氧(O3 )。圖4C是犧牲性遮罩416已被選擇性地沉積在氧化矽區域404上方後之結構400一部分的示意性剖面圖。在本實施例中，犧牲性遮罩416之沉積去除了抑制劑層414。由於抑制劑層414，沉積製程選擇性地在氧化矽區域404上沉積比在SiOCN區域408及Si區域412上更薄的犧牲性遮罩416。若需較厚的犧牲性遮罩416，抑制劑層之選擇性沉積(步驟306)及犧牲性遮罩之選擇性沉積(步驟308)可循環地重覆(步驟316)。
在其他實施例中，含金屬前驅物可包含鎢(W)、鉬(Mo)、鈦(Ti)、鋯(Zr)、鉿(Hf)、銻(Sb)、釩(V)、鉭( Ta)、鋁(Al)、釔(Y)或鎳(Ni)。在諸多實施例中，至少一金屬氧化物、金屬碳化物或金屬氮化物犧牲性遮罩可為二氧化鈦(TiO2 )、二氧化鋯(ZrO2 )、二氧化鉿(HfO2 )、氧化銻(SbO)、氧化釩 (V2 O3 )、氧化釔(YO)、氧化鉭(TaO)或氧化鋁(Al2 O3 )。
在諸多實施例中，使用了HfO2 之犧牲性遮罩。在此等實施例中，含Hf前驅物(步驟310)及作為反應物之氧化劑 (步驟312)係用於沉積二氧化鉿。含Hf前驅物可為叔丁醇鉿(IV)、四(二乙基醯胺基)鉿(IV)、四(二甲基醯胺基)鉿(IV)、四(乙基甲基醯胺基)鉿(IV)、四氯化鉿之至少一者。HfO2 及TiO2 比上SiO2 之蝕刻選擇性分別為30 : 1及5 : 1。氧化劑可為水(H2 O)蒸氣、氧(O2 )、過氧化物(H2 O2 )或臭氧(O3 )之一或更多者。在諸多實施例中，在犧牲層為金屬氮化物下，反應物可為氨(NH3 )、聯胺(N2 H4 )之至少一者。在其他實施例中，在犧牲層為金屬碳化物下，反應物可為甲烷(CH4 )、乙烯(C2 H4 )及乙炔(C2 H4 )之至少一者。
在其他實施例中，使用ZrO2 之犧牲性遮罩。在此等實施例中，將含Zr前驅物(步驟310)及作為反應物之氧化劑(步驟312)用於沉積ZrO2 。含Zr前驅物可為叔丁醇鋯(IV)、四(二乙基醯胺基)鋯(IV)、四(二甲基醯胺基)鋯(IV)、四(乙基甲基醯胺基)鋯(IV)、四氯化鋯之至少一者。氧化劑可為水(H2 O)蒸氣、氧(O2 )、過氧化物(H2 O2 )或臭氧(O3 )之一或更多者。
可利用專用的缺陷控制步驟，以清除氧化矽表面上之任何殘留金屬氧化物。此可為基於三氯化硼(BCl3 )之電漿製程，其在5-150毫托耳之壓力下使用5-100每分鐘標準立方厘米(sccm)之缺陷控制氣體，BCl3 、50-300 sccm氯(Cl2 )及0-500 sccm氦(He)。提供RF功率為100-500瓦。提供0-50伏特之偏壓。
使用原子層蝕刻以相對於矽區域412及SiOCN區域408而選擇性地蝕刻氧化矽區域404。由於原子層蝕刻相對於較低含氧矽區域選擇性地蝕刻氧化矽區域，因此可使用先前實施例中所描述的原子層蝕刻。在本實施例中，原子層蝕刻提供碳氟化合物之反應氣體，例如六氟-2-丁炔(C4 F6 )或八氟環丁烷(C4 F8 )。碳氟化合物在此氧化矽區域404上方選擇性地形成沉積層。沖除反應氣體，並提供Ar之活化氣體。Ar活化沉積層，導致沉積的氟蝕刻氧化矽區域404。原子層蝕刻製程可重覆複數循環。圖4D是完成原子層蝕刻後之結構400一部分的示意性剖面圖。
隨著半導體裝置之不斷微縮，特徵部之間的距離縮小，而微影之邊緣放置誤差成為重要的問題。為了減輕此情況，產業界已採用自對準方案，例如用於接觸孔之蝕刻。在此方案中，接觸孔之佈設可與閘極間隔物重疊。因此，接觸氧化矽蝕刻需對間隔物材料具選擇性。同時，材料預算在縮減。預算縮減增加了目標蝕刻相對於餘者(未受影響的材料)之選擇性要求。習知碳氟化合物(Cx Fy )/ 基於Ar之氧化矽ALE已呈現較高之材料選擇性，但仍面臨數十Å的初始損耗。
另一方法是選擇性沉積材料作為額外犧牲性遮罩，以選擇性地保護不應被蝕刻的材料。此在沉積製程期間需有高選擇性，使得待蝕刻之區域上沒有材料成核。任何核都將構成後續蝕刻製程之缺陷基礎，因此是不可接受的。
諸多實施例提供了增進選擇性成核延遲之表面處理。該表面處理可包括抑制劑層。諸多實施例提供犧牲性遮罩之材料選擇性沉積。諸多實施例在犧牲性遮罩之開口區域上提供缺陷控制。諸多實施例提供犧牲性遮罩之開口區域之底層材料的選擇性蝕刻。
選擇適當的預處理能夠基於反應位點之密度以區分材料而達犧牲性遮罩之選擇性沉積。預處理可透過活化(如電漿處理)或藉由抑制劑去活化來增強反應位點。示例為自組裝單層(氣及液)相、聚合物或碳基抑制劑、原位預處理 : 氨(NH3 )、聯胺(N2 H4 )、氫(H2 )、水(H2 O)、過氧化物(H2 O2 ) 、氧(O2 )、臭氧(O3 )及氣相反應。
犧牲性遮罩之沉積取決於反應位點的密度，其透過選擇除了沉積外還不限制表面之化學改質的條件。
在其他實施例中，可使用矽化物之犧牲性遮罩。在一些實施例中，氧化矽區域含有氧化矽並可具有額外摻雜物，但具有高於較低含氧矽區域之氧濃度。
在其他實施例中，提供了用於相對較高含氧區域(例如具有氫氧(OH)表面終端之SiOCN、SiN或金屬氧化物)而選擇性蝕刻矽或氮化矽(SiN)區域之方法。犧牲性遮罩相對於矽或SiN區域而選擇性地沉積在較高含氧區域上。矽或SiN區域相對於較高含氧區域上之犧牲性遮罩而被選擇性地蝕刻。在一些實施例中，犧牲性遮罩係基於金屬氧化物。金屬氧化物選擇性地沉積在較高含氧區域上。該金屬氧化物可為透過熱ALD製程沉積成的氧化鈦，氧化鋯或氧化鉿，其係利用含Ti、Zr或Hf前驅物與氧化劑(用以沉積氧化鈦，氧化鋯或氧化鉿)之間的循環製程，其中氧化劑可為H2 O蒸氣、O2 或O3 。在一些實施例中，犧牲性遮罩在較高含氧區域上之沉積係透過表面處理來提高。
儘管本揭示內容已就幾個示例性實施例進行描述，但還存在著落入本揭示內容範疇內之變更、修改、置換及諸多替代均等者。亦應注意，存在許多實施本發明之方法及設備的替代方式。因此，傾向於將以下隨附申請專利範圍解釋為包括落入本發明真實精神及範圍內之所有此等變更、修改、置換及諸多替代均等者。
104:步驟 108:步驟 112:步驟 116:步驟 200:結構 204:氧化矽區域 208:矽氧碳氮化物(SiOCN)區域 212:矽(Si)區域 216:犧牲性遮罩 304:步驟 306:步驟 308:步驟 310:步驟 312:步驟 316:步驟 320:步驟 324:步驟 400:結構 404:氧化矽區域 408:矽氧碳氮化物(SiOCN)區域 412:矽(Si)區域 414:抑制劑層 416:犧牲性遮罩
本發明以示例而非限制性方式於附圖之圖中加以說明，其中相似參考符號代表相似元件，其中 :
圖1為一實施例之高階流程圖。
圖2A-C為根據一實施例處理之結構的示意性剖面圖。
圖3為另一實施例之高階流程圖。
圖4A-D為根據圖3實施例處理之結構的示意性剖面圖。
304:步驟
306:步驟
308:步驟
310:步驟
312:步驟
316:步驟
320:步驟
324:步驟

Claims (21)

  1. 一種用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，包括 : a) 相對於該氧化矽區域，選擇性地沉積一犧牲性遮罩於該較低含氧矽區域上； 以及 b) 相對於該較低含氧矽區域上之該犧牲性遮罩，以原子層蝕刻選擇性地蝕刻該氧化矽區域。
  2. 如請求項1所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中步驟a及b重覆複數次。
  3. 如請求項1所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該較低含氧矽區域為矽、碳化矽、氮化矽、氮氧化矽、碳氮化矽及矽氧碳氮化物之至少一者。
  4. 如請求項1所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，更包括選擇性地沉積一抑制劑層於該氧化矽區域上，其中該犧牲性遮罩係基於金屬氧化物、金屬碳化物或金屬氮化物之至少一者，其中金屬氧化物、金屬碳化物或金屬氮化物之該至少一者係選擇性地沉積於該較低含氧矽區域，並透過該抑制劑層而延遲沉積於該氧化矽區域上。
  5. 如請求項4所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中金屬氧化物、金屬碳化物或金屬氮化物之該至少一者係藉由原子層沉積製程沉積，其利用包含有含金屬前驅物步驟及反應物步驟之循環製程。
  6. 如請求項5所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該含金屬前驅物步驟包括沉積含有鎢、鉬、鈦、鋯、鉿、銻、釩、鉭、鋁、釔或鎳之至少一者的含金屬前驅物。
  7. 如請求項5所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該反應物步驟包括提供一反應物，其為含氧反應物、含氮反應物或含碳反應物之至少一者。
  8. 如請求項5所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，更包括於該含金屬前驅物步驟與該反應物步驟之間提供沖洗。
  9. 如請求項5所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該犧牲性遮罩包括二氧化鉿。
  10. 如請求項9所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該含金屬前驅物步驟包括沉積叔丁醇鉿(IV)、四(二乙基醯胺基)鉿(IV)、四(二甲基醯胺基)鉿(IV)、四(乙基甲基醯胺基)鉿(IV)、四氯化鉿之至少一者的含金屬前驅物，且其中該反應物步驟包括提供一反應物，其為水蒸氣、氧、過氧化物或臭氧之至少一者。
  11. 如請求項5所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該犧牲性遮罩包括二氧化鋯。
  12. 如請求項11所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該含金屬前驅物步驟包括沉積叔丁醇鋯(IV)、四(二乙基醯胺基)鋯(IV)、四(二甲基醯胺基)鋯(IV)、四(乙基甲基醯胺基)鋯(IV)、四氯化鋯之至少一者的含金屬前驅物，且其中該反應物步驟包括提供一反應物，其為水蒸氣、氧、過氧化物或臭氧之至少一者。
  13. 如請求項5所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該犧牲性遮罩包括二氧化鈦。
  14. 如請求項13所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該含金屬前驅物步驟包括沉積異丙醇鈦(IV)、四(二乙基醯胺基)鈦(IV)、四(二甲基醯胺基)鈦(IV)、四(乙基甲基醯胺基)鈦(IV)、四氯化鈦之至少一者的含金屬前驅物，且其中該反應物步驟包括提供一反應物，其為水蒸氣、氧、過氧化物或臭氧之至少一者。
  15. 如請求項4所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，其中該選擇性地沉積該抑制劑層包括沉積一自組裝單層，其相對於該較低含氧矽區域而選擇性地沉積於該氧化矽區域上。
  16. 如請求項4所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，更包括在沉積該抑制劑層前，用氟化氫之氣態或水溶液清潔該氧化矽區域及該較低含氧矽區域。
  17. 如請求項4所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，更包括在沉積該犧牲性遮罩後提供清潔。
  18. 如請求項4所述之用於相對於較低含氧矽區域而選擇性地蝕刻氧化矽區域之方法，更包括在沉積該抑制劑層之後且在沉積該犧牲性遮罩之前提供預處理，其中該預處理透過活化來增強該較低含氧矽區域之反應位點或使該抑制劑層去活化。
  19. 一種用於相對於具有OH表面終端之較高含氧區域而選擇性地蝕刻矽或SiN區域之方法，包括 : a) 相對於該矽或SiN區域，選擇性地沉積一犧牲性遮罩於該較高含氧區域上； 以及 b) 相對於該較高含氧區域上之該犧牲性遮罩，選擇性地蝕刻該矽或SiN區域。
  20. 如請求項19所述之用於相對於具有OH表面終端之較高含氧區域而選擇性地蝕刻矽或SiN區域之方法，其中該犧牲性遮罩包括金屬氧化物，其中該金屬氧化物選擇性地沉積於該較高含氧區域上。
  21. 如請求項20所述之用於相對於具有OH表面終端之較高含氧區域而選擇性地蝕刻矽或SiN區域之方法，其中該金屬氧化物包括利用含Ti前驅物與用以沉積該氧化鈦之氧化劑之間的循環製程透過熱ALD製程沉積的氧化鈦，其中該氧化劑為水蒸氣、氧、過氧化物或臭氧之至少一者。
TW109104676A 2019-02-14 2020-02-14 使用犧牲性遮罩的選擇性蝕刻 TW202044342A (zh)

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