JP2022047488A - シリコンダイのストレートワイヤボンディング - Google Patents
シリコンダイのストレートワイヤボンディング Download PDFInfo
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- JP2022047488A JP2022047488A JP2021083945A JP2021083945A JP2022047488A JP 2022047488 A JP2022047488 A JP 2022047488A JP 2021083945 A JP2021083945 A JP 2021083945A JP 2021083945 A JP2021083945 A JP 2021083945A JP 2022047488 A JP2022047488 A JP 2022047488A
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- die
- solder
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Abstract
Description
Claims (20)
- 基板と、
2つ以上のシリコンダイであって、第1のダイが前記基板上に設けられ、第2のダイが前記第1のダイ上に積層され、
前記基板に平行な上側平面と、
前記上側平面に平行であるとともに前記上側平面から第1の距離を空けて配置された下側平面と、
前記上側平面と前記下側平面との間に設けられ、かつそれらに垂直な少なくとも第1のエッジ部と、
前記少なくとも第1のエッジ部に設けられ、かつ互いに上下に整列した少なくとも第1のセットの接続パッドとを備えた2つ以上のシリコンダイと、
前記第1のセットの接続パッドに結合されるように構成された導電素子と、
前記導電素子に結合され、前記第1のセットの接続パッドの接続パッド間の距離に関連付けられる間隔を置いて配置された複数のはんだブロックとを備える装置。 - 前記はんだブロックは、リフローし、前記導電素子と前記第1のセットの接続パッドとの間にはんだ付け接続を形成するように加熱されるように構成される、請求項1に記載の装置。
- 前記はんだブロックは、前記第1の距離とほぼ同じ幅を有し、シリコンダイのエッジを内部に受け入れるように構成された第1の溝を備える、請求項1に記載の装置。
- 前記第1の溝の幅は、前記第1のエッジ部の幅よりも10%広い、請求項3に記載の装置。
- 前記第1のエッジ部の幅は25ミクロンである、請求項4に記載の装置。
- 前記導電素子は、前記基板に電気的に接続される、請求項1に記載の装置。
- 前記基板はチャネルを含み、前記導電素子は前記チャネル内の前記基板に電気的に接続される、請求項6に記載の装置。
- 前記第1のダイを前記第2のダイに取り付けるための手段をさらに備える、請求項1に記載の装置。
- 前記第1のダイと第2のダイとの間に設けられ、かつそれらを物理的に接続するダイアタッチフィルムをさらに備える、請求項1に記載の装置。
- 前記第1のダイを前記第2のダイから離間させるための手段をさらに備える、請求項1に記載の装置。
- 前記導電素子は、錫めっきの銅線を含む、請求項1に記載の装置。
- 前記2つ以上のシリコンダイの第1のサブセットは、前記第1のエッジ上に前記第1のセットの接続パッドを有し、前記2つ以上のシリコンダイの第2のサブセットは、第2のエッジ上に第2のセットの接続パッドを有し、前記第2のエッジは前記第1のエッジとは異なる、請求項1に記載の装置。
- 前記2つ以上のシリコンダイは、前記2つ以上のシリコンダイの前記第1のサブセットのそれぞれが前記2つ以上のシリコンダイの前記第2のサブセットと積層されるように設けられる、請求項12に記載の装置。
- 前記導電素子および前記接続パッドのうちの少なくとも1つは、フラックス材料で被覆される、請求項1に記載の装置。
- 導電性はんだは、金、インジウム、イリジウム、錫めっき銅、およびパラジウムからなる群から選択される少なくとも1つで構成される、請求項1に記載の装置。
- 前記複数のシリコンダイの1つ以上のエッジが上下に整列するように複数のシリコンダイを積層する工程であって、前記1つ以上のエッジが複数の接続パッドを含む、工程と、
略直線状に形成される導体を前記1つ以上のエッジに実質的に垂直な軸上に設置する工程であって、前記直線状導体が前記複数の接続パッドのうちの1つ以上と接触する、工程と、
前記1つ以上の接続パッドと、前記1つ以上の接続パッドと接触する前記直線状導体の1つ以上の部分に導電性はんだを塗布する工程と、
熱を加えてはんだをリフローし、前記はんだによって前記直線状導体の前記1つ以上の部分とそれに接触する前記1つ以上の接続パッドとを物理的かつ電気的に結合する工程とを含む、方法。 - 前記直線状導体を磁束層で被覆することをさらに含む、請求項16に記載の方法。
- 前記導電性はんだは、前記1つ以上の接続パッドおよび前記1つ以上の接続パッドと接触する前記直線状導体の1つ以上の部分に加熱された液状はんだを塗布することによって塗布される、請求項16に記載の方法。
- 前記複数のシリコンダイの1つ以上のエッジが上下に整列するように複数のシリコンダイを積層する工程であって、前記1つ以上のエッジが複数の接続パッドを含む、工程と、
接続線を前記1つ以上のエッジに実質的に垂直な軸上に設置する工程であって、前記接続線は前記複数のシリコンダイ上の整列された第1のセットの接続パッド間の距離に関連付けられる間隔を置いて配置された複数のはんだブロックを含み、前記接続線は、前記複数のはんだブロックが整列された第1のセットの接続パッドと接触するように配置される、工程と、
熱を加えてはんだブロックをリフローし、前記はんだブロックによって前記接続線を整列された接続パッドに物理的に接合する工程とを含む、方法。 - フレーム噴流加熱プロセスは、前記はんだブロックをリフローするために使用される、請求項19に記載の方法。
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