TWI807328B - 具有矽晶粒之筆直導線接合之電子設備及其操作方法 - Google Patents

具有矽晶粒之筆直導線接合之電子設備及其操作方法 Download PDF

Info

Publication number
TWI807328B
TWI807328B TW110119026A TW110119026A TWI807328B TW I807328 B TWI807328 B TW I807328B TW 110119026 A TW110119026 A TW 110119026A TW 110119026 A TW110119026 A TW 110119026A TW I807328 B TWI807328 B TW I807328B
Authority
TW
Taiwan
Prior art keywords
die
connection pads
silicon
solder
electronic device
Prior art date
Application number
TW110119026A
Other languages
English (en)
Other versions
TW202226517A (zh
Inventor
基魯巴卡蘭 佩里陽南
丹尼爾 林寧
賈亞維爾 佩丘馬修
Original Assignee
美商西方數位科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商西方數位科技公司 filed Critical 美商西方數位科技公司
Publication of TW202226517A publication Critical patent/TW202226517A/zh
Application granted granted Critical
Publication of TWI807328B publication Critical patent/TWI807328B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29194—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/291 - H01L2224/29191
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45109—Indium (In) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45111—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45116—Lead (Pb) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45178—Iridium (Ir) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45611—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48105—Connecting bonding areas at different heights
    • H01L2224/48108—Connecting bonding areas at different heights the connector not being orthogonal to a side surface of the semiconductor or solid-state body, e.g. fanned-out connectors, radial layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/48147—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48496—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball not being interposed between the wire connector and the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48499—Material of the auxiliary connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78267—Flame torch, e.g. hydrogen torch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the wire connector during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85011—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H01L2224/85815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06506—Wire or wire-like electrical connections between devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H01L2924/145—Read-only memory [ROM]
    • H01L2924/1451—EPROM
    • H01L2924/14511—EEPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Die Bonding (AREA)

Abstract

本發明揭示了一種方法，其包含堆疊數個矽晶粒，使得該等晶粒之一個或多個邊緣豎直對齊，其中該一個或多個邊緣包含數個連接墊。該方法亦包含在實質上垂直於該一個或多個邊緣之一軸線上定位一連接導線。該連接導線包含在其上形成之數個焊料塊。該等焊料塊以與該等晶粒上之一第一組經對齊連接墊之間的一距離相關聯之間隔隔開。該連接導線定位成使得該等焊料塊與該第一組經對齊連接墊接觸。該方法亦包含施加熱以使該等焊料塊回焊並將該連接導線實體地及電氣地耦接至該等連接墊。

Description

具有矽晶粒之筆直導線接合之電子設備及其操作方法
相關申請案之交叉參考
本申請案主張2020年9月11申請之美國臨時專利申請案第63/077,069號的優先權及權益，此申請案之全部內容以引用之方式併入本文中。
本申請案大體上係關於在矽晶粒之間提供電氣連接，且更確切言之，係關於沿著豎直邊緣電氣地連接矽晶粒。
在某些矽晶粒結構中，連接墊放在晶粒之頂部或底部。此佔用了用於形成電晶體之寶貴空間，並且當晶粒堆疊時，它們之間所需的連接要求晶粒以階梯形交錯排列，從而導致形成完整或封裝之積體裝置需要更多空間。
本文中所描述之製程、裝置及系統描述了沿著矽晶粒之豎直邊緣電氣地連接晶粒，從而降低所需要的橫向空間要求。確切言之，藉由將連接墊放在晶粒之豎直邊緣上，晶粒可以豎直堆疊，而不需要使晶粒交錯排列來實現經由位於頂部或底部之連接墊形成之連接。實際上，可以沿著豎直對齊、在邊緣安裝之連接墊來進行線性連接，藉此使矽晶粒以完全豎直配置之方式堆疊。此減小了 矽晶粒之橫向佔據面積，藉此實現更小的總體外觀尺寸。此外，電晶體大體上係在矽晶粒之頂部及/或底部上而不係在豎直邊緣上形成的。藉由將連接墊放在邊緣上，矽晶粒上先前未使用之空間可以用於互連，從而為矽晶粒頂部及/或底部上之電晶體形成騰出空間。
本文中所描述之方法及系統提供一種新穎且有利的連接技術，用於利用在邊緣形成之連接墊將矽晶粒互連，且具體而言，用於豎直堆疊之矽晶粒。
本揭示內容亦提供一種設備，其包含基板及兩個或更多個矽晶粒，其中第一晶粒設置在該基板上，且第二晶粒設置或堆疊在該第一晶粒上。該等矽晶粒包含與該基板平行之上部平坦表面、與該上部平坦表面平行且與該第一平坦表面間隔第一距離之下部平坦表面、設置在該上部平坦表面與該下部平坦表面之間且垂直於該上部平坦表面及該下部平坦表面之第一邊緣部分，及設置在該第一邊緣部分上且豎直對齊之第一組連接墊。該設備進一步包含組態成耦接至該一個或多個連接墊之導電元件，及數個焊料塊。該等焊料塊耦接至該導電元件且以與該第一組連接墊之間的距離相關聯之間隔隔開。在一些實施例中，該等焊料塊包含第一凹槽，該第一凹槽具有量度為與該第一邊緣部分之寬度大致相同的寬度，且組態成在該第一凹槽內接受該等矽晶粒之邊緣。
本揭示內容提供一種方法，其包含：堆疊數個矽晶粒，使得該等矽晶粒之一個或多個邊緣豎直對齊，其中一個或多個邊緣包含數個連接墊。該方法亦包含在實質上垂直於該一個或多個邊緣之軸線上定位實質上線性導體，其中該線性導體與該等連接墊中之一者或多者接觸。該方法進一步包含向該一個或多個連接墊及與該一個或多個連接墊接觸的該線性導體之一個或多個部分施加導電焊料。該方法亦包含施加熱以使該焊料回焊，以使該焊料將該線性導體之 該一個或多個部分實體地及電氣地耦接至與其接觸之該一個或多個連接墊。
本揭示內容亦提供一種方法，其包含堆疊數個矽晶粒，使得該數個矽晶粒之一個或多個邊緣豎直對齊，其中該一個或多個邊緣包含數個連接墊。該方法亦包含在實質上垂直於該一個或多個邊緣之軸線上定位連接導線。該連接導線包含數個焊料塊。該等焊料塊以與該等矽晶粒上之第一組經對齊連接墊之間的距離相關聯之間隔隔開。該連接導線定位成使得該等焊料塊與該第一組經對齊連接墊接觸。該方法亦包含施加熱以使該等焊料塊回焊，以使該等焊料塊將該連接導線實體地耦接至該等經對齊連接墊。
以此方式，本揭示內容之各個態樣至少在矽晶粒互連以及其設計及架構之技術領域中實現了改良。雖然本揭示內容特別適用於連接堆疊式晶粒，但熟習此項技術者將理解，本揭示內容可在其它實施例中使用，例如，其中晶粒與基板正交設置之實施例。上述概要僅旨在給出本揭示內容之各個態樣之總體思路，且並不以任何方式限制本揭示內容之範疇。
100:矽晶粒
102:連接墊
104:頂表面
200:矽晶粒
202a:連接墊
202b:連接墊
204:豎直邊緣
206:上部平坦表面
208:下部平坦表面
210:第一長度
300:製程
302:製程區塊
304:製程區塊
306:製程區塊
400:導電連接導線
402:第一連接墊
404:矽晶粒
406:液態焊料
500:第一矽晶粒
502:第一連接墊
506:第一邊緣
508:第二矽晶粒
510:第二連接墊
512:第一邊緣
516:第一團塊
518:第二團塊
600:焊料塊
602:第一槽或凹槽
604:第二槽或凹槽
700:製程
702:製程區塊
704:製程區塊
706:製程區塊
802:第一矽晶粒
804:第二矽晶粒
806:第三矽晶粒
808:連接墊
810:連接墊
812:連接墊
814:連接墊
816:連接墊
818:連接墊
820:第一晶粒附接膜
822:第二晶粒附接膜
902:第一連接導線
904:第二連接導線
906:第一焊料塊
908:第二焊料塊
910:第三焊料塊
912:第一焊料塊
914:第二焊料塊
916:第三焊料塊
1000:基板
1002:第一連接墊
1004:第二連接墊
1006:通道
1100:總成
1102:第一矽晶粒
1104:第三矽晶粒
1106:第五矽晶粒
1108:連接墊
1112:第二矽晶粒
1114:第四矽晶粒
1116:第六矽晶粒
1118:連接墊
1122:第一連接導線
1124:第二連接導線
1126:基板
1128:第一基板連接墊
1130:第二連接墊
圖1係根據本揭示內容之一些實施例的連接一個或多個矽晶粒之已知方法的透視圖。
圖2a係根據本揭示內容之一些實施例的具有一個或多個豎直邊緣連接墊之矽晶粒的透視圖。
圖2b係根據本揭示內容之一些實施例的圖2a之矽晶粒的橫截面側視圖。
圖3係根據本揭示內容之一些實施例的示出連接兩個或更多個矽晶粒之製程的流程圖。
圖4a係根據本揭示內容之一些實施例之矽晶粒的橫截面，示出了 在圖3中描述之製程之一部分。
圖4b係根據本揭示內容之一些實施例之矽晶粒的橫截面，示出了在圖3中描述之製程之另一部分。
圖5係根據本揭示內容之一些實施例的使用在圖3中描述之製程電氣地耦接之兩個矽晶粒的透視圖。
圖6係根據本揭示內容之一些實施例之焊料塊的仰視圖。
圖7係根據本揭示內容之一些實施例的示出連接多個矽晶粒以形成封裝式IC或另一封裝式矽裝置之製程的流程圖。
圖8係根據本揭示內容之一些實施例的準備進行電氣耦接之複數個矽晶粒的透視圖。
圖9係根據本揭示內容之一些實施例的電氣耦接之複數個矽晶粒的透視圖。
圖10係根據本揭示內容之一些實施例的耦接至基板之多個矽晶粒的透視圖。
圖11係根據本揭示內容之一些實施例的耦接至基板之矽晶粒的替代配置。
在以下描述中，為了提供對本揭示內容之一個或多個態樣的理解，闡述了許多細節，例如基於矽之晶粒組態、矽晶粒電氣互連方法等等。熟習此項技術者將很容易清楚，此等特定細節僅僅係例示性的，且並不意欲限制本申請案之範疇。以下描述僅旨在給出本揭示內容之各個態樣之總體思路，且並不以任何方式限制本揭示內容之範疇。
圖1係在封裝式積體電路(「封裝式IC」)或例如記憶體裝置之另 一封裝式矽裝置(「封裝」)內連接一個或多個矽晶粒100之習知方法的透視圖。如圖1所示，矽晶粒100包含定位在矽晶粒100之頂表面104上之一個或多個連接墊102。為了連接矽晶粒100之連接墊102，矽晶粒100交錯排列，使得每一後續矽晶粒之連接墊102被曝露或可以接近。矽晶粒之此種交錯需要封裝內之額外空間，藉此常常使封裝之大小增加。此外，隨著更多的晶粒被堆疊，上部晶粒將更加突出，以致它們偏離中心，此可能會導致晶粒傾斜及/或使晶粒承受可能致使晶粒開裂之應力。
現在轉向圖2a，根據一些實施例，示出了具有定位在豎直邊緣204上之一個或多個連接墊202a、202b之矽晶粒200的透視圖。晶粒200具有大體上平坦的上部表面206及大體上平坦的下部表面208，該下部表面與該上部表面206平行且與該上部表面206間隔第一距離。在示出之實施例中，第一距離係晶粒200之寬度。豎直邊緣204設置在上部平坦表面206與下部平坦表面208之間且垂直於上部平坦表面206及下部平坦表面208。藉由在豎直邊緣上定位連接墊202a、202b，可以豎直堆疊一個或多個矽晶粒200，而不必像圖1所示之那樣使矽晶粒200交錯或偏移。此使得在積體電路內堆疊多個矽晶粒200時所需的空間更小。
圖2b係矽晶粒200的橫截面側視圖，示出了連接墊202a。如圖2b中所示，連接墊202a可與上部表面206及下部表面208部分地重疊。然而，在一些實施例中，在上部表面206及/或下部表面208上可能不存在連接墊202a之外部重疊。例如，連接墊202a(及連接墊202b)可能僅在豎直邊緣204上曝露，而連接墊202a之其餘部分位於矽晶粒200內。在一些實施例中，連接墊可具有25微米之第一長度210。然而，亦設想了超過25微米或小於25微米之長度。在一些實施例中，此長度可以等於矽晶粒200之豎直邊緣204之寬度。
現在轉向圖3，根據一些實施例，示出了用於連接兩個或更多個矽晶粒之製程300。在製程區塊302處，將導電連接導線定位至第一矽晶粒之第一連接墊上。連接導線可由一種或多種金屬或其它導電材料構造而成，例如銅、鋁、金、鈀、銦、銥、各種銀/錫混合物、鉛以及二元及/或三元金屬合金等。在一個實施例中，連接導線包括銅芯，此銅芯用諸如錫之金屬鍍覆，以免銅發生氧化。在一個實施例中，連接導線係圓形或實質上圓形導線。然而，在其它實例中，連接導線可以係扁平或帶狀導線。在一些實施例中，連接導線可具有大致24μm之直徑。在其它實施例中，連接導線可具有在約16μm至約50μm之範圍內之直徑。在其它另外實施例中，連接導線可具有小於16μm或大於50μm之直徑。
在一些實施例中，矽晶粒定位成使得連接導線能夠跨連接墊鋪設，並使用重力維持其位置。此可參見圖4a，其示出了定位至矽晶粒404之連接墊402上之導電連接導線400。然而，在其它實施例中，可以使用各種其它方法將連接導線保持在連接墊上之適當位置。
一旦連接導線400定位在第一矽晶粒之第一連接墊402上，就在製程區塊304處向第一連接墊402及連接導線400施加液態焊料。此可參見圖4b，其示出了施加至第一連接墊402繼而又涵蓋連接導線400之一大塊液態焊料406。在一些實施例中，焊料係金焊料。在其它實施例中，焊料可以係銀焊料、鈀焊料、銥焊料、銦焊料、銀/錫混合物焊料、一種或多種二元或三元金屬合金焊料、鉛焊料或其它可以施加之焊料類型。一般而言，加熱焊料，將焊料回焊成液態以供分配至連接墊402上。
一旦焊料被施加，就在製程區塊306處向焊料、連接導線400及/或第一連接墊施加熱。熱使焊料熔化或回焊，使焊料在第一連接墊與連接導線之間產生焊接點。在一些實施例中，第一連接墊及/或連接導線可以塗上焊劑材料， 以促進在第一連接墊與連接導線之間形成適當的焊接點。儘管上述製程300係關於使用焊料將連接導線400連接至第一連接墊402來描述的，但是經考慮，可以使用其它連接製程，例如焊接、釺焊、雷射焊接等等。
可以跨多個矽晶粒使用製程300。例如，如圖5所示，在第一邊緣506上具有第一連接墊502之第一矽晶粒500與在第二矽晶粒508之第一邊緣512上具有第二連接墊510之第二矽晶粒508對齊。經考慮，第一矽晶粒500及第二矽晶粒508之大小相同，並使它們的相關連接墊502、510處於相同位置，以促進矽晶粒500、508之堆疊。如上文關於製程300所描述，跨第一連接墊502及第二連接墊510兩者定位連接導線514。與上文類似，矽晶粒500、508可定位成使得第一連接墊502及第二連接墊510面朝上，使得重力能夠在連接導線514上施加向下力，藉此輔助將連接導線保持在適當位置。接著，可以將液態焊料放在第一連接墊502上之第一團塊(或「斑點」)516中，然後放在第二連接墊510上之第二團塊518中。然後，施加熱以使焊料回焊，從而促進連接導線514與第一連接墊502及第二連接墊510之間的焊接點。
在一些實施例中，可以向連接墊(以及相關聯之焊料團塊及連接導線)集中施加熱，例如經由火焰噴射或雷射加熱。然而，在其它實施例中，向矽晶粒(例如矽晶粒500、508)施加一般熱，以促進在晶粒之連接墊處使焊料熔化或回焊。例如，矽晶粒可以放在回焊熔爐中或經受全面式熱源，例如經由擴散爐。
現在轉向圖6，根據一些實施例，示出了焊料塊600的仰視圖。焊料塊600可由各種焊接材料製成，例如銦、金、銀、鈀、銥、鉛或其它可以施加之焊料類型。如圖6所示，焊料塊600可具有方形形狀，但是亦設想了其它形狀。焊料塊600可包含第一槽或凹槽602及第二槽或凹槽604。第一槽602之大 小可設定成容納連接導線，例如上文所描述之彼等連接導線。在一個實施例中，第一槽之寬度為大致15微米。然而，亦設想了小於15微米或大於15微米之寬度。第一槽602在焊料塊600內之位置可比第二槽604深，使得第二槽604能夠收納整個或部分連接墊，例如上文所描述之連接墊。
如上所述，第二槽604組態成收納矽晶粒之連接墊之全部或一部分，如上文所論述。在一個實施例中，第二槽604之寬度係25微米。然而，設想了大於25微米及小於25微米之寬度。另外，應理解，第二槽604之大小可設定成根據需要容納不同大小之連接墊。例如，第二槽604可以比矽晶粒之連接墊之寬度寬大致10%。然而，在適當時，第二槽可以寬超過10%或小於10%。第二槽604之深度可設定成接受連接墊之深度，使得在加熱焊料塊600時能夠形成有效的焊接點(在下文更詳細地描述)。例如，第二槽之深度可以係5微米。然而，亦設想了大於5微米及小於5微米之深度。
在一些實施例中，焊料塊600可在連接導線之製造期間耦接至連接導線。例如，多個焊料塊600可以耦接至連接導線，並以與矽晶粒之間的間隔相關聯之距離隔開。此可允許連接導線被置放成與多個矽晶粒接觸，使得焊料塊600定位在各別矽晶粒之連接墊上方。
現在轉向圖7，根據一些實施例，示出了用於連接多個矽晶粒以形成積體電路之製程700。在製程區塊702處，將兩個或更多個矽晶粒定位在一起。如上文所描述，可以豎直堆疊矽晶粒，使得晶粒邊緣與共同軸線對齊。在一些實例中，可以在矽晶粒之間置放晶粒附接膜或晶粒附接膜黏合劑，使此等矽晶粒相對於彼此固定在適當位置。在其它實施例中，可以在矽晶粒之間置放糊劑或其它液態黏合劑來使此等矽晶粒相對於彼此固定在適當位置。在一些實施例中，晶粒附接膜可在矽晶粒之間提供等於晶粒附接膜之厚度之間隔距離。例如，晶粒 附接膜可具有10微米之厚度。然而，亦設想了大於10微米或小於10微米之厚度。在其它另外實施例中，晶粒附接膜之大小可設定成未達到晶粒之邊緣，使得晶粒邊緣處存在微小的間隙。在另外其它實施例中，可以使用例如矽晶粒坯料之間隔物來隔開鄰近晶粒。
矽晶粒亦可定位成使得連接墊面朝上。例如，可以旋轉固持晶粒之工件卡盤(work chuck)，以便將連接墊旋轉至面朝上，以允許重力幫助將連接導線保持在適當位置，如本文進一步描述之那樣。在一些實施例中，工件卡盤可組態成在多個位置旋轉矽晶粒，以允許不同的連接墊在導線接合/焊接製程中面朝上。經進一步考慮，矽晶粒之定位採用已知的晶粒定位技術。
矽晶粒之定位在圖8中示出。如圖8中所示，根據一些實施例，設備包含第一矽晶粒802、第二矽晶粒804及第三矽晶粒806。矽晶粒802、804、806中之每一者包含兩個連接墊808、810、812、814、816、818。第一矽晶粒802及第二矽晶粒804由第一晶粒附接膜820隔開，第二矽晶粒804及第三矽晶粒806由第二晶粒附接膜822隔開。如圖8中所示，連接墊808、812、816呈第一對齊形式並形成第一組，且連接墊810、814及818呈第二對齊形式並形成第二組。
一旦在製程區塊702處已定位矽晶粒，就在製程區塊704處將具有兩個或更多個積體焊料塊之連接導線定位至該兩個或更多個矽晶粒上。在一個實施例中，連接導線定位成使得積體焊料塊與一組豎直對齊之連接墊(即，第一組或第二組)對齊。例如，如圖9所示，第一連接導線902分別定位在第一矽晶粒802、第二矽晶粒804及第三矽晶粒806之連接墊808、812及816上方。第一連接導線902具有第一焊料塊906、第二焊料塊908及第三焊料塊910，它們間隔開以與連接墊808、812及814對齊，如所示。類似地，第二連接導線904 分別定位在第一矽晶粒802、第二矽晶粒804及第三矽晶粒806之連接墊810、814及818上方。第一連接導線902具有第一焊料塊912、第二焊料塊914及第三焊料塊916，它們間隔開以與連接墊808、812及814對齊，如所示。
現在重新轉至圖7，一旦在製程區塊704中定位連接導線，就在製程區塊706處施加熱以使焊料塊回焊。在一個實施例中，向焊料塊、連接墊及連接導線施加熱，如上文所描述。在一些實施例中，可以向焊料塊(以及相關聯之連接墊及連接導線)集中施加熱，例如經由火焰噴射或雷射加熱。然而，在其它實施例中，向矽晶粒施加一般熱，以促進在晶粒之連接墊處使焊料熔化或回焊。例如，矽晶粒可以放在回焊熔爐中或經受全面式熱源，例如經由擴散爐。
現在轉向圖10，上文所描述之矽晶粒802、804及806經由連接導線902、904耦接至基板1000。基板1000可包含第一連接墊1002及第二連接墊1004，它們分別用於連接至第一連接導線902及第二連接導線904。在一些實施例中，基板1000可包含通道1006。在一些實施例中，通道1006允許連接導線902、904安裝至基板1000上，而不需要連接導線進行任何彎曲或其它變形。儘管圖8、9及10之實例示出了經由兩個連接導線連接之三個矽晶粒之實例，但是經考慮，上文所描述之製程700可以根據需要擴展成與超過三個矽晶粒以及與超過兩個連接導線一起使用。因此，圖8、9及10之實例僅出於說明性目的，不應被理解為將本文描述之製程限制為圖中所示之特定組件。
現在轉向圖11，以總成1100之形式示出了矽晶粒之替代配置。總成1100包含第一矽晶粒1102、第三矽晶粒1104及第五矽晶粒1106，它們包含位於矽晶粒1102、1104及1106之第一邊緣1110上之連接墊1108。第二矽晶粒1112、第四矽晶粒1114及第六矽晶粒1116分別交替地定位在第一矽晶粒1102、第三矽晶粒1104及第五矽晶粒1106之間。第二矽晶粒1112、第四矽晶粒1114 及第六矽晶粒1116包含位於與第一矽晶粒1102、第三矽晶粒1104及第五矽晶粒1106之第一邊緣相對之第二邊緣1120上之連接墊1118。第一連接導線1122耦接至第一矽晶粒1102、第三矽晶粒1104及第五矽晶粒1106之連接墊1108，且第二連接導線1124耦接至第二矽晶粒1112、第四矽晶粒1114及第六矽晶粒1116之連接墊1118。第一連接導線1122在第一基板連接墊1128處耦接至基板1126。類似地，第二連接導線1124經由第二連接墊1130耦接至基板1126。
總成1100被稱為雙通道結構，實現了每隔一個晶粒進行一次連接。此組態亦可因為矽晶粒之交替而實現連接之間存在更多空間，從而減小了由連接導線焊接至晶粒連接墊造成的短路風險。將連接導線連接至連接墊之焊接點可以使用上文所描述之製程來完成，例如製程300及/或製程700，藉此能夠沿著各別矽晶粒之豎直側面進行連接。在一些實例中，可以使用四通道結構，如此可以在矽晶粒之給定邊緣上每隔三個晶粒進行一次連接。圖11中所示之實例係出於說明性目的，並且經考慮，可以根據給定應用之需要使用上文所描述之雙通道或四通道設計來連接多個晶粒。
所描述之實施例特別適用於電氣地連接堆疊式矽晶粒。例如，一些版本之電子記憶體裝置包含複數個堆疊式NAND晶粒。因此，具有複數個NAND晶粒堆疊在基板上之記憶體裝置將得益於本文所揭示之特徵及晶粒電氣互連方法。
關於本文中所描述之製程、系統、方法、啟發法等，應理解，雖然該等製程之步驟等等已經被描述為根據某一排序之順序進行，但是該等製程可以按所描述步驟以除本文中所描述之次序以外之次序進行的方式來實踐。此外應理解，可以同時進行某些步驟，可以添加其它步驟，亦可以省略本文中所描述之某些步驟。換言之，本文中對製程之描述係為了說明某些實施例而提供的， 並且絕不應理解為限制申請專利範圍。
如本文中所使用，術語實質上意謂約、幾乎或在所修飾之術語之上下10-20%內。例如，「實質上線性」意謂物件在完全線性(即，筆直)之10-20%內。類似地，「實質上圓形」意謂物件可相對於正圓形尺寸具有10-20%之變形或偏轉。
因此，應理解，以上描述意欲係說明性而非限制性的。在閱讀以上描述後，將清楚除所提供之實例以外之許多實施例及應用。本發明之範疇不應參考以上描述來確定，而是應參考所附申請專利範圍以及此類申請專利範圍授權之等效物之全部範疇來確定。預期並希望在本文所論述之技術中出現未來的發展，並且所揭示之裝置、方法及設備將被合併至此等未來的實施例中。總之，應理解，本申請案能夠修改及改變。
除非本文中明確地進行相反指示，否則申請專利範圍中所用之所有術語都旨在具有如在本文中所描述之技術方面博學之人員所理解的其最廣泛之合理構造及其普通含義。具體言之，除非申請專利範圍相反地敍述了明確限制，否則例如「一」、「該(the/said)」等單數數詞之使用應理解為列舉一個或多個所表示之要素。
提供摘要，使得讀者能夠快速確定本技術揭示內容之性質。在理解以下內容的情況下進行提交：摘要將不會用於解釋或限制申請專利範圍之範疇或含義。另外，在前述實施方式中，可以看出，在各種實施例中，出於精簡本揭示內容之目的而將各種特徵分組在一起。不應將本揭示內容之此方法解釋為反映以下意圖：主張之實施例需要比每一請求項中明確敍述之特徵多的特徵。相反，如所附申請專利範圍所反映，本發明主題在於單個所揭示實施例之不到全部的特徵。因此，所附申請專利範圍特此被併入至實施方式中，其中每一請求項獨 自作為單獨主張之主題。
200:矽晶粒
202a:連接墊
202b:連接墊
204:豎直邊緣
206:上部平坦表面
208:下部平坦表面

Claims (19)

  1. 一種電子設備，其包括：一基板；兩個或更多個矽晶粒，其中一第一晶粒設置在該基板上，且一第二晶粒堆疊在該第一晶粒上，並且該等晶粒包括：一上部平坦表面，其與該基板平行；一下部平坦表面，其與該上部平坦表面平行且與該上部平坦表面間隔一第一距離；至少一第一邊緣部分，其設置在該上部平坦表面與該下部平坦表面之間且垂直於該上部平坦表面及該下部平坦表面；以及至少一第一組連接墊，其設置在該至少第一邊緣部分上，並且其中該第一組連接墊彼此豎直對齊；一導電元件，其組態成耦接至該第一組連接墊；以及複數個焊料塊，其耦接至該導電元件且以與該第一組連接墊中之該等連接墊之間的一距離相關聯之一間隔隔開。
  2. 如請求項1之電子設備，其中該等焊料塊組態成被加熱，使得該等焊料塊回焊並在該導電元件與該第一組連接墊之間產生一焊接連接。
  3. 如請求項1之電子設備，其中該等焊料塊包括一第一凹槽，該第一凹槽具有量度為與該第一距離大致相同的一寬度以在該第一凹槽內接受該等矽晶粒之邊緣。
  4. 如請求項1之電子設備，其中該等焊料塊包括一第一凹槽，其中該第一凹槽之一寬度比該第一邊緣部分之一寬度寬10%。
  5. 如請求項4之電子設備，其中該第一邊緣部分之該寬度係25微 米。
  6. 如請求項1之電子設備，其中該導電元件電氣地連接至該基板。
  7. 如請求項6之電子設備，其中該基板包含一通道，且該導電元件在該通道內電氣地連接至該基板。
  8. 如請求項1之電子設備，其進一步包括用於將該第一晶粒附接至該第二晶粒之構件。
  9. 如請求項1之電子設備，其進一步包括一晶粒附接膜，該晶粒附接膜設置在該第一晶粒與該第二晶粒之間且實體地連接該第一晶粒與該第二晶粒。
  10. 如請求項1之電子設備，其進一步包括用於隔開該第一晶粒與該第二晶粒之構件。
  11. 如請求項1之電子設備，其中該導電元件包括一鍍錫銅線。
  12. 如請求項1之電子設備，其中該兩個或更多個矽晶粒之一第一子集在該第一邊緣上具有該第一組連接墊，且該兩個或更多個矽晶粒之一第二子集在一第二邊緣上具有一第二組連接墊，其中該第二邊緣不同於該第一邊緣。
  13. 如請求項12之電子設備，其中該兩個或更多個矽晶粒配置成使得該兩個或更多個矽晶粒之該第一子集中之每一矽晶粒與該兩個或更多個矽晶粒之該第二子集交替。
  14. 如請求項1之電子設備，其中該導電元件及該等連接墊中之至少一者塗覆有一焊劑材料。
  15. 如請求項1之電子設備，其中該導電元件包括選自由以下組成之群組之至少一者：金、銦、銥、鍍錫銅及鈀。
  16. 一種用於操作一電子設備之方法，其包括：堆疊複數個矽晶粒，使得該複數個矽晶粒之一個或多個邊緣豎直對齊，其中該一個或多個邊緣包含複數個連接墊；在實質上垂直於該一個或多個邊緣之一軸線上定位一實質上線性導體，其中該線性導體與該複數個連接墊中之一者或多者接觸；向該一個或多個連接墊及與該一個或多個連接墊接觸的該線性導體之一個或多個部分施加一導電焊料，其中藉由向該一個或多個連接墊及與該一個或多個連接墊接觸的該線性導體之該一個或多個部分施加受熱之液態焊料來施加該導電焊料；以及施加熱以使該焊料回焊，以使該焊料將該線性導體之該一個或多個部分實體地及電氣地耦接至與其接觸之該一個或多個連接墊。
  17. 如請求項16之方法，其進一步包括用一焊劑層塗覆該線性導體。
  18. 一種用於操作一電子設備之方法，其包括：堆疊複數個矽晶粒，使得該複數個矽晶粒之一個或多個邊緣豎直對齊，其中該一個或多個邊緣包含複數個連接墊；在實質上垂直於該一個或多個邊緣之一軸線上定位一連接導線，其中該連接導線包括以與該複數個矽晶粒上之一第一組經對齊連接墊之間的一距離相關聯之一間隔隔開之複數個焊料塊，並且其中該連接導線定位成使得該複數個焊料塊與該第一組經對齊連接墊接觸；施加熱以使該等焊料塊回焊，以使該等焊料塊將該連接導線實體地耦接至該等經對齊連接墊。
  19. 如請求項18之方法，其中使用一火焰噴射加熱製程以使該等焊料塊回焊。
TW110119026A 2020-09-11 2021-05-26 具有矽晶粒之筆直導線接合之電子設備及其操作方法 TWI807328B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063077069P 2020-09-11 2020-09-11
US63/077,069 2020-09-11
US17/171,576 US11456272B2 (en) 2020-09-11 2021-02-09 Straight wirebonding of silicon dies
US17/171,576 2021-02-09

Publications (2)

Publication Number Publication Date
TW202226517A TW202226517A (zh) 2022-07-01
TWI807328B true TWI807328B (zh) 2023-07-01

Family

ID=80476299

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110119026A TWI807328B (zh) 2020-09-11 2021-05-26 具有矽晶粒之筆直導線接合之電子設備及其操作方法

Country Status (4)

Country Link
US (1) US11456272B2 (zh)
JP (1) JP7227304B2 (zh)
CN (1) CN114171504A (zh)
TW (1) TWI807328B (zh)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1084012A (ja) * 1996-09-06 1998-03-31 Hitachi Ltd 半導体装置
US6271598B1 (en) * 1997-07-29 2001-08-07 Cubic Memory, Inc. Conductive epoxy flip-chip on chip
US20050142954A1 (en) * 1998-05-04 2005-06-30 Farnworth Warren M. Modular sockets using flexible interconnects
TW200605298A (en) * 2004-04-13 2006-02-01 Vertical Circuits Inc Stacked die BGA or LGA component assembly
US20070290314A1 (en) * 2006-06-14 2007-12-20 Julian Partridge Contrast Interposer Stacking System And Method
TW200926387A (en) * 2007-12-06 2009-06-16 Nanya Technology Corp Stacked-type chip package structure and fabrication method thereof
US20110272825A1 (en) * 2009-11-04 2011-11-10 Vertical Circuits, Inc. Stacked die assembly having reduced stress electrical interconnects
TW201220411A (en) * 2010-05-19 2012-05-16 Vertical Circuits Inc Electrical connector between die pad and z-interconnect for stacked die assemblies
US20120187577A1 (en) * 2007-06-19 2012-07-26 International Business Machines Corporation Direct Edge Connection for Multi-Chip Integrated Circuits
CN111081695A (zh) * 2019-12-31 2020-04-28 江林伟 一种可堆叠微电子封装结构

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118164A (ja) 1984-07-04 1986-01-27 Mitsubishi Electric Corp 半導体装置
JP2001156250A (ja) 1999-11-24 2001-06-08 Seiko Epson Corp 半導体チップ、マルチチップパッケージ，および半導体装置と、並びに、それを用いた電子機器
KR20090034081A (ko) * 2007-10-02 2009-04-07 삼성전자주식회사 적층형 반도체 패키지 장치 및 이의 제작 방법
JP5112275B2 (ja) * 2008-12-16 2013-01-09 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
KR102191669B1 (ko) * 2013-08-05 2020-12-16 삼성전자주식회사 멀티-칩 패키지
CN107994011B (zh) * 2016-10-26 2020-06-02 晟碟信息科技（上海）有限公司 半导体封装体和制造半导体封装体的方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1084012A (ja) * 1996-09-06 1998-03-31 Hitachi Ltd 半導体装置
US6271598B1 (en) * 1997-07-29 2001-08-07 Cubic Memory, Inc. Conductive epoxy flip-chip on chip
US20050142954A1 (en) * 1998-05-04 2005-06-30 Farnworth Warren M. Modular sockets using flexible interconnects
TW200605298A (en) * 2004-04-13 2006-02-01 Vertical Circuits Inc Stacked die BGA or LGA component assembly
US20070290314A1 (en) * 2006-06-14 2007-12-20 Julian Partridge Contrast Interposer Stacking System And Method
US20120187577A1 (en) * 2007-06-19 2012-07-26 International Business Machines Corporation Direct Edge Connection for Multi-Chip Integrated Circuits
TW200926387A (en) * 2007-12-06 2009-06-16 Nanya Technology Corp Stacked-type chip package structure and fabrication method thereof
US20110272825A1 (en) * 2009-11-04 2011-11-10 Vertical Circuits, Inc. Stacked die assembly having reduced stress electrical interconnects
TW201220411A (en) * 2010-05-19 2012-05-16 Vertical Circuits Inc Electrical connector between die pad and z-interconnect for stacked die assemblies
CN111081695A (zh) * 2019-12-31 2020-04-28 江林伟 一种可堆叠微电子封装结构

Also Published As

Publication number Publication date
US11456272B2 (en) 2022-09-27
JP7227304B2 (ja) 2023-02-21
US20220084979A1 (en) 2022-03-17
JP2022047488A (ja) 2022-03-24
TW202226517A (zh) 2022-07-01
CN114171504A (zh) 2022-03-11

Similar Documents

Publication Publication Date Title
TWI479637B (zh) 半導體裝置及其製造方法
US6455785B1 (en) Bump connection with stacked metal balls
JP4751714B2 (ja) 積層実装構造体
TWI574330B (zh) 半導體裝置之製造方法及半導體裝置
US5960262A (en) Stitch bond enhancement for hard-to-bond materials
JPS6332941A (ja) 電子回路用多層配線構造体、その形成方法およびそのための配線テープ
JP2558976B2 (ja) 電子部品の電極とリードとの接合方法
JP2009016583A (ja) 半導体装置およびその製造方法
KR20140085359A (ko) 반도체 장치의 제조 방법 및 반도체 장치
TWI807328B (zh) 具有矽晶粒之筆直導線接合之電子設備及其操作方法
KR20090018014A (ko) 특수 와이어 접합성 마감부를 제거하고 기판의 본딩 피치를감소시키는 와이어 본딩 구조체와 방법
TW471077B (en) Bump forming method, bump forming bonding tool, semiconductor wafer, semiconductor chip, semiconductor device, manufacture thereof, circuit board and electronic machine
JP4976673B2 (ja) 半導体装置、基板及び半導体装置の製造方法
TW201411793A (zh) 半導體裝置及其製造方法
JP2008085149A (ja) 半導体装置およびその配線接合方法，摩擦攪拌接合装置
TWI734338B (zh) 半導體裝置
WO2015161731A1 (zh) 倒装芯片的封装方法及装置
CN113937010B (zh) 半导体装置的制造方法
TW201332026A (zh) 多晶片堆疊的封裝件及其製法
JPS623978B2 (zh)
EP4095890A1 (en) Chip stacking structure, manufacturing method, and electronic device
JP2555915B2 (ja) 金属突起物の形成方法，金属ろう材の供給方法およびそれらの治具
JP2000294586A (ja) 半導体装置及び半導体装置の製造方法
JPH06291248A (ja) 半導体装置
JP2553810B2 (ja) ボンディング装置