JP2022041925A - 下層組成物及びパターニング方法 - Google Patents
下層組成物及びパターニング方法 Download PDFInfo
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- JP2022041925A JP2022041925A JP2021133938A JP2021133938A JP2022041925A JP 2022041925 A JP2022041925 A JP 2022041925A JP 2021133938 A JP2021133938 A JP 2021133938A JP 2021133938 A JP2021133938 A JP 2021133938A JP 2022041925 A JP2022041925 A JP 2022041925A
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- substituted
- unsubstituted
- alkyl
- aryl
- cycloalkyl
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- 239000000203 mixture Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000000059 patterning Methods 0.000 title claims abstract description 7
- 125000003118 aryl group Chemical group 0.000 claims abstract description 82
- 125000003367 polycyclic group Chemical group 0.000 claims abstract description 38
- 229920000642 polymer Polymers 0.000 claims abstract description 36
- 125000002950 monocyclic group Chemical group 0.000 claims abstract description 32
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 25
- 125000001424 substituent group Chemical group 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 138
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- 125000000217 alkyl group Chemical group 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 48
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 39
- 125000001072 heteroaryl group Chemical group 0.000 claims description 39
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 35
- 125000000592 heterocycloalkyl group Chemical group 0.000 claims description 34
- 125000004446 heteroarylalkyl group Chemical group 0.000 claims description 32
- 239000001257 hydrogen Substances 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 27
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 22
- 125000004404 heteroalkyl group Chemical group 0.000 claims description 22
- 125000000304 alkynyl group Chemical group 0.000 claims description 21
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- 125000001188 haloalkyl group Chemical group 0.000 claims description 2
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- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
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- 125000004429 atom Chemical group 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
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- 125000002252 acyl group Chemical group 0.000 description 3
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- 125000001246 bromo group Chemical group Br* 0.000 description 3
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- 238000012360 testing method Methods 0.000 description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 3
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- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000000561 purinyl group Chemical class N1=C(N=C2N=CNC2=C1)* 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 125000005548 pyrenylene group Chemical group 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical class N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 125000005031 thiocyano group Chemical group S(C#N)* 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 description 1
- 150000003643 triphenylenes Chemical group 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
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- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
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- C—CHEMISTRY; METALLURGY
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/02—Condensation polymers of aldehydes or ketones with phenols only of ketones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Abstract
Description
合成実施例1
丸底フラスコに、8.0gの1-ナフトール(1当量)、8.34gの(1R)-(-)-ミルテナール(1当量)、及び20mLのPGMEを入れた。反応混合物を60℃に温め、5分間撹拌した後、5.33gのメタンスルホン酸を一度に添加した。その後、反応を120℃に20時間加熱した。この反応時間の後、反応混合物を室温まで冷却し、9/1(v/v)メタノール/水溶液の中に注ぎ入れ、固体ポリマー生成物を得た。生成物を濾過し、メタノールで洗浄し、その後4時間風乾し、50℃で更に20時間真空乾燥することで、合成実施例1(P-1)を得た。(収率61%、Mw=1010、PDI=1.2)。
合成実施例2(P-2)~6(P-6)は、それぞれの芳香族モノマーを使用して上と同じ手順を用いて調製することで、以下の構造によって示される目的のポリマーを得た。合成実施例5及び6のアルデヒドモノマーとしてシトラールを使用した。
丸底フラスコに、10.0gの4,4’-(9-フルオレニリデン)ジフェノール(1当量)、5.21gのアセナフトキノン(1当量)、及び40mLのPGMEを入れた。反応混合物を60℃に温め、5分間撹拌した後、2.00gのメタンスルホン酸を一度に添加した。その後、反応を120℃に24時間加熱した。この反応時間の後、反応混合物を室温まで冷却し、9/1(v/v)のメタノール/水の中に注ぎ入れ、固体ポリマー生成物を得た。生成物を濾過し、水及びメタノールで洗浄し、その後4時間風乾し、50℃で更に20時間真空乾燥することで、合成実施例7(P-7)を得た。(収率40%、Mw=1120、PDI=1.3)。
合成実施例8(P-8)~12(P-12)は、それぞれの芳香族モノマーとジケトンモノマーとを使用して上と同じ手順を用いて調製することで、以下の構造によって示される目的のポリマーを得た。
比較合成実施例1
丸底フラスコに、5.0gの1-ナフトール(1当量)、1.04gのパラホルムアルデヒド(1当量)、及び25mLのプロピレングリコールモノメチルエーテルアセテート(PGMEA)を入れた。反応混合物を60℃に温め、5分間撹拌した後、0.20gのメタンスルホン酸を一度に添加した。その後、反応を120℃に16時間加熱した。この反応時間の後、反応混合物を室温まで冷却し、9/1(v/v)のメタノール/水の中に注ぎ入れ、固体ポリマー生成物を得た。生成物を濾過し、過剰のメタノールで洗浄し、その後4時間風乾し、50℃で更に20時間真空乾燥することで、比較合成実施例1(CP-1)を得た。(収率52%、Mw=2240、PDI=2.0)。
丸底フラスコに、5.0gのカルバゾール(1.5当量)、0.60gのパラホルムアルデヒド(1当量)、及び20mLの酢酸プロピレングリコールモノメチルエーテル(PGMEA)を入れた。反応混合物を60℃に温め、5分間撹拌した後、1.45gのメタンスルホン酸を一度に添加した。その後、反応を120℃に16時間加熱した。反応中に反応混合物中に固体析出物が形成された。割り当てられた時間の後、反応混合物を室温まで冷却し、懸濁液を9/1(v/v)のメタノール/水の中に注ぎ入れ、固体ポリマー生成物を得た。生成物を濾過し、過剰のメタノールで洗浄し、その後4時間風乾し、50℃で更に20時間真空乾燥することで、比較合成実施例2(CP-2)を得た。(収率80%、Mw=2730、PDI=2.5)。
丸底フラスコに、5.0gの1-ピレノール(1当量)、0.69gのパラホルムアルデヒド(1当量)、及び20mLのプロピレングリコールモノメチルエーテル(PGME)を入れた。反応混合物を60℃に温め、5分間撹拌した後、2.20gのメタンスルホン酸を一度に添加した。その後、反応を120℃に1時間加熱した。この反応時間の後、反応はほとんど固化した。固体をフラスコから取り出し、水及びメタノールで洗浄し、その後4時間風乾し、50℃で更に20時間真空乾燥することで、比較合成実施例3(CP-3)を得た。
丸底フラスコに、10.0gの1-ナフトール(1当量)、7.78gのシクロヘキサンカルボキサルデヒド(1当量)、及び30mLのプロピレングリコールモノメチルエーテル(PGME)を入れた。反応混合物を60℃に温め、5分間撹拌した後、6.70gのメタンスルホン酸を一度に添加した。その後、反応を120℃に20時間加熱した。この反応時間の後、反応混合物を室温まで冷却し、9/1(v/v)のメタノール/水の中に注ぎ入れ、固体ポリマー生成物を得た。生成物を濾過し、メタノールで洗浄し、その後4時間風乾し、50℃で更に20時間真空乾燥することで得た。比較合成実施例4(CP-4)は、GPC分析によってポリマーではない小分子生成物として同定された。
丸底フラスコに、10.0gの1-ナフトール(1当量)、7.92gのヘプタナール(1当量)、及び35mLのプロピレングリコールモノメチルエーテル(PGME)を入れた。反応混合物を60℃に温め、5分間撹拌した後、6.70gのメタンスルホン酸を一度に添加した。その後、反応を120℃に20時間加熱した。この反応時間の後、反応混合物を室温まで冷却し、9/1(v/v)のメタノール/水の中に注ぎ入れた。析出物は観察されなかったため、粗製混合物を濃縮してオイルを得た。比較合成実施例5(CP-5)は、GPC分析によってポリマーではない小分子生成物として同定された。
ポリマーの数平均分子量及び重量平均分子量、それぞれMn及びMw、並びに多分散度(PDI)の値(Mw/Mn)は、Agilent1100シリーズ屈折率及びMiniDAWN光散乱検出器(Wyatt Technology Co.)を備えたAgilent1100シリーズLCシステム上でのゲル浸透クロマトグラフィー(GPC)によって測定した。サンプルを約10mg/mLの濃度でHPLCグレードのTHFに溶解し、0.45μmのシリンジフィルターを通して濾過した後、4本のShodexカラム(KF805、KF804、KF803、及びKF802)に注入した。1mL/分の流量及び35℃の温度を維持した。カラムを狭い分子量PS標準(EasiCal PS-2、Polymer Laboratories,Inc.)を使用して較正した。
表1に記載のポリマーを表2で説明した成分と組み合わせて組成物を形成することによって下層組成物を調製した。組成物は、コーティング前に0.2μmのPTFEシリンジフィルターを通して濾過した。ポリマー、添加剤1、添加剤2、及び溶剤の量はグラム(g)単位で記載されている。
下層組成物を100~200nmでコーティングし、240℃で60秒間ベークした。膜厚はエリプソメトリーで測定した。
膜架橋の指標として溶剤剥離耐性を測定した。ACT-8クリーントラック(Tokyo Electron Co.)を使用して、8インチのシリコンウェハー上に下層組成物をコーティングし、ベークした。膜厚は、Therma-wave CoのOptiProbe(商標)を用いて測定した。プロピレングリコールモノメチルエーテルアセテート(PGMEA)を膜に90秒間付着させた後、105℃で60秒間剥離前ベーク(PSB)した。耐溶剤性は式1に従って計算した:
[(剥離前のFT)-(PSB後のFT)]/(剥離前のFT)*100% 式1
(式中のFTは膜厚である)。耐溶剤性は表2に報告されており、この中でAは95~100%の耐溶剤性、Bは95%未満の耐溶剤性として定義されている。
平坦化特性を決定するために、本発明の下層組成物を評価した。テンプレートをCNSE Nano-FAB(Albany,NY)で形成した。テンプレートは100nmのSiO2の膜厚、様々なピッチ及びパターンを有しており、ダイサイズは1cm×1cmであった。各ダイは、100nmの個々のステップパターンで始まり、2000μmの非パターンオープンエリアが続き、45nm/90nm~2μm/5μmのピッチのトレンチを被覆する様々なライン/スペースパターンが続いた。平坦化性能を判断するために最初のステップパターンを使用した。テンプレートクーポンを、本組成物でクーポンをコートする前に脱水ベークとして150℃で60秒間ベークした。各下層組成物を、スピンコーター及び1500rpm+/-200rpmのスピン速度を使用してテンプレートクーポン上にコーティングした。目標膜厚は、硬化後に100nmであり、組成物希釈をそれに応じて調節して硬化後にほぼ目標の膜厚を得た。ウェハーを240℃のホットプレート上に60秒間置くことにより、膜を硬化させた。ステップ全体の膜の平面化品質は、KLA Tencor P-7触針式表面形状測定器によって評価した。
Claims (12)
- 式(1):
Arは、単環式若しくは多環式のC5~60芳香族基であり、前記芳香族基は、1つ以上の芳香族環ヘテロ原子、ヘテロ原子含有置換基、又はこれらの組み合わせを含み;
XはC又はOであり;
R1は、水素、置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ヘテロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C2~30アルケニル、置換若しくは無置換C2~30アルキニル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C7~30アルキルアリール、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキルであり;
R2は、置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ヘテロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C2~30アルケニル、置換若しくは無置換C2~30アルキニル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C7~30アルキルアリール、置換若しくは無置換C3~30ヘテロアリール、置換若しくは無置換C4~30ヘテロアリールアルキル、又は-NR11R12であり、R11~R12は、それぞれ独立に、水素、置換若しくは無置換C1~30アルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキルであり;
任意選択的には、R1とR2は、一緒になって5~7員環を形成していてもよく;
任意選択的には、R11~R12のうちの少なくとも1つは、R1と一緒になって5~7員環を形成していてもよく;
XがCの場合、Ra及びRbは、それぞれ独立に、水素、置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ヘテロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C2~30アルケニル、置換若しくは無置換C2~30アルキニル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C7~30アルキルアリール、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキルであり;
Ra及びRbは、任意選択的に一緒になって5~7員環を形成していてもよく;
Ra又はRbのうちの1つは、任意選択的にR2と一緒になって5~7員環を形成していてもよく;
XがOの場合には、Ra及びRbは存在しない)
の繰り返し単位を含むポリマーを含む下層組成物。 - Arが、置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ハロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C1~30ヘテロシクロアルキル、置換若しくは無置換C2~30アルケニル、置換若しくは無置換C2~30アルキニル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C7~30アルキルアリール、置換若しくは無置換C3~30ヘテロアリール、置換若しくは無置換C4~30ヘテロアリールアルキル、ハロゲン、-OR21、-SR22、又は-NR23R24のうちの少なくとも1つで任意選択的に置換されていてもよい、単環式若しくは多環式のC5~60ヘテロアリーレン基又は単環式若しくは多環式のC6~60アリーレン基であり、R21~R24は、それぞれ独立に、水素、置換若しくは無置換C1~30アルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキルであるが、
前記単環式又は多環式のC6~60アリーレン基が少なくとも1つのヘテロ原子含有置換基で置換されていることを条件とする、請求項1に記載の下層組成物。 - Arが式(2):
A1、A2、及びA3は、それぞれ存在しても存在していなくてもよく、それぞれ独立して1~3個の縮合芳香環を表し;
R3及びR4は、それぞれ独立して置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ヘテロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C2~30アルケニル、置換若しくは無置換C2~30アルキニル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C7~30アルキルアリール、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキル、ハロゲン、-OR31、-SR32、又は-NR33R34を表すが、
R3とR4のうちの少なくとも1つが-OR31、-SR32、又は-NR33R34であることを条件とし;
R31~R34は、それぞれ独立して、水素、置換若しくは無置換C1~30アルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキルであり;
mは0~4の整数であり;
nは、0~4の整数であるが;
mとnの合計が0より大きい整数であることを条件とする)
の基を含む、請求項1又は2に記載の下層組成物。 - Arが、式(3a)、(3b)、又は(3c):
A4は存在しても存在しなくてもよく、1~3個の縮合芳香環を表し;
Z1及びZ2はそれぞれ独立にC又はNであり;
各R5は、独立して、置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ヘテロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C2~30アルケニル、置換若しくは無置換C2~30アルキニル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C7~30アルキルアリール、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキルであり;
pは、0~4の整数であり;
A4は少なくとも1つのヘテロアリール環を含み、Z1とZ2のうちの少なくとも1つはNであるか、又はこれらの組み合わせである)
の基を含む、請求項1~3のいずれか一項に記載の下層組成物。 - Arが式(4):
L1は、単結合、-O-、-S-、-S(O)-、-SO2-、-C(O)-、-CR51R52-、-NR53-、又は-PR54-であり;
L2は、存在しないか、単結合、-O-、-S-、-S(O)-、-SO2-、-C(O)-、置換若しくは無置換C1~2アルキレン、置換若しくは無置換C6~30アリーレン、又は置換若しくは無置換C5~30ヘテロアリーレンであり;
R8及びR9は、それぞれ独立して、置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ヘテロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C2~30アルケニル、置換若しくは無置換C2~30アルキニル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C7~30アルキルアリール、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキル、ハロゲン、-OR55、-SR56、又は-NR57R58であり;
R51~R58は、それぞれ独立して、水素、置換若しくは無置換C1~30アルキル、置換若しくは無置換C1~30ヘテロアルキル、置換若しくは無置換C3~30シクロアルキル、置換若しくは無置換C2~30ヘテロシクロアルキル、置換若しくは無置換C6~30アリール、置換若しくは無置換C7~30アリールアルキル、置換若しくは無置換C3~30ヘテロアリール、又は置換若しくは無置換C4~30ヘテロアリールアルキルであり;
aは0~4の整数であり;
bは0~4の整数である)
の基を含む、請求項1~4のいずれか一項に記載の下層組成物。 - 前記単環式又は多環式のC5~60芳香族基が、ヒドロキシルで置換された単環式又は多環式のC6~60アリーレン基である、請求項1~5のいずれか一項に記載のフォトレジスト下層組成物。
- XがCである、請求項1~7のいずれか一項に記載の下層組成物。
- 硬化剤、架橋剤、及び界面活性剤のうちの1つ以上を更に含有する、請求項1~8のいずれか一項に記載の下層組成物。
- (a)請求項1~9のいずれか一項に記載の下層組成物の層を基板上に塗布すること;(b)前記塗布した下層組成物を硬化して下層を形成すること;及び(c)前記下層の上にフォトレジスト層を形成すること;を含む、パターンの形成方法。
- 前記フォトレジスト層を形成する前に、前記下層の上にケイ素含有層、有機反射防止コーティング層、又はこれらの組み合わせを形成することを更に含む、請求項10に記載の方法。
- 前記フォトレジスト層をパターン化し、前記パターン化されたフォトレジスト層から、前記下層及び前記下層の下の層にパターンを転写することを更に含む、請求項10又は11に記載の方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11349654A (ja) * | 1998-06-10 | 1999-12-21 | Sumitomo Durez Kk | フォトレジスト用フェノール樹脂の製造方法 |
JP2005221515A (ja) * | 2004-01-08 | 2005-08-18 | Tokyo Ohka Kogyo Co Ltd | システムlcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
WO2006120845A1 (ja) * | 2005-05-11 | 2006-11-16 | Tokyo Ohka Kogyo Co., Ltd. | ネガ型レジスト組成物およびレジストパターン形成方法 |
WO2018056279A1 (ja) * | 2016-09-20 | 2018-03-29 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、並びにレジストパターン形成方法及びパターン形成方法 |
WO2019225615A1 (ja) * | 2018-05-25 | 2019-11-28 | 日産化学株式会社 | 炭素酸素間二重結合を利用したレジスト下層膜形成組成物 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08202034A (ja) * | 1995-01-31 | 1996-08-09 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
US5932391A (en) * | 1995-08-18 | 1999-08-03 | Kabushiki Kaisha Toshiba | Resist for alkali development |
JP2001114853A (ja) * | 1999-10-21 | 2001-04-24 | Nippon Shokubai Co Ltd | カルボキシル基を有するノボラック型フェノール樹脂および該フェノール樹脂を用いたポジ型感光性樹脂組成物 |
DE10057044B4 (de) * | 2000-11-17 | 2004-05-06 | Clariant Gmbh | Harze aus Alkylphenolen und Glyoxalsäurederivaten, und ihre Verwendung als Emulsionsspalter |
JP2003238817A (ja) * | 2002-02-14 | 2003-08-27 | Riichiro Nakajo | 複合樹脂材料 |
KR20100137525A (ko) * | 2008-03-18 | 2010-12-30 | 디에스엠 아이피 어셋츠 비.브이. | 수지 블렌드를 포함하는 조성물 |
KR102155115B1 (ko) * | 2012-12-14 | 2020-09-11 | 닛산 가가쿠 가부시키가이샤 | 카르보닐기함유 폴리하이드록시 방향환 노볼락수지를 포함하는 레지스트 하층막 형성조성물 |
KR101767080B1 (ko) * | 2014-04-09 | 2017-08-10 | 제일모직 주식회사 | 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
JP6712188B2 (ja) | 2015-07-13 | 2020-06-17 | 信越化学工業株式会社 | レジスト下層膜形成用組成物及びこれを用いたパターン形成方法 |
TWI715655B (zh) * | 2015-12-11 | 2021-01-11 | 日商迪愛生股份有限公司 | 酚醛清漆型樹脂及抗蝕劑膜 |
KR20180107260A (ko) * | 2016-02-11 | 2018-10-01 | 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. | 중합체, 조성물, 희생층의 생성, 및 이들을 사용하는 반도체 디바이스를 위한 방법 |
CN106118229A (zh) * | 2016-08-29 | 2016-11-16 | 苏州安洁科技股份有限公司 | 一种环保油墨 |
JP6940335B2 (ja) | 2017-08-30 | 2021-09-29 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
EP3453728A1 (en) * | 2017-09-06 | 2019-03-13 | Exploitatiemaatschappij Smit-Vecht B.V. | A method for manufacturing a lignin-modified polyphenolic product and its use for the treatment of leather and skin |
DE102018100694A1 (de) * | 2018-01-12 | 2019-07-18 | Ask Chemicals Gmbh | Formaldehydreduziertes Phenolharzbindemittel |
-
2020
- 2020-08-31 US US17/007,903 patent/US20220066321A1/en active Pending
-
2021
- 2021-08-16 TW TW110130090A patent/TW202210549A/zh unknown
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-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11349654A (ja) * | 1998-06-10 | 1999-12-21 | Sumitomo Durez Kk | フォトレジスト用フェノール樹脂の製造方法 |
JP2005221515A (ja) * | 2004-01-08 | 2005-08-18 | Tokyo Ohka Kogyo Co Ltd | システムlcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
WO2006120845A1 (ja) * | 2005-05-11 | 2006-11-16 | Tokyo Ohka Kogyo Co., Ltd. | ネガ型レジスト組成物およびレジストパターン形成方法 |
WO2018056279A1 (ja) * | 2016-09-20 | 2018-03-29 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、並びにレジストパターン形成方法及びパターン形成方法 |
WO2019225615A1 (ja) * | 2018-05-25 | 2019-11-28 | 日産化学株式会社 | 炭素酸素間二重結合を利用したレジスト下層膜形成組成物 |
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