JP2022029417A5 - - Google Patents
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- JP2022029417A5 JP2022029417A5 JP2021097756A JP2021097756A JP2022029417A5 JP 2022029417 A5 JP2022029417 A5 JP 2022029417A5 JP 2021097756 A JP2021097756 A JP 2021097756A JP 2021097756 A JP2021097756 A JP 2021097756A JP 2022029417 A5 JP2022029417 A5 JP 2022029417A5
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- JP
- Japan
- Prior art keywords
- common
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- semiconductor device
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- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims 31
- 239000000758 substrate Substances 0.000 claims 16
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/984,286 US11387169B2 (en) | 2020-08-04 | 2020-08-04 | Transistor with I/O ports in an active area of the transistor |
| US16/984,286 | 2020-08-04 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022029417A JP2022029417A (ja) | 2022-02-17 |
| JP2022029417A5 true JP2022029417A5 (https=) | 2024-06-03 |
| JP7614953B2 JP7614953B2 (ja) | 2025-01-16 |
Family
ID=77042731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021097756A Active JP7614953B2 (ja) | 2020-08-04 | 2021-06-11 | トランジスタの活性領域内にｉ／ｏポートを備えるトランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11387169B2 (https=) |
| EP (1) | EP3958326A1 (https=) |
| JP (1) | JP7614953B2 (https=) |
| CN (1) | CN114068580A (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7685129B2 (ja) | 2020-04-03 | 2025-05-29 | マコム テクノロジー ソリューションズ ホールディングス， インコーポレイテッド | ソース、ゲート及び／又はドレイン導電性ビアを有するｉｉｉ族窒化物ベースの高周波トランジスタ増幅器 |
| KR102880739B1 (ko) * | 2020-04-03 | 2025-11-07 | 메이콤 테크놀로지 솔루션즈 홀딩스, 인코퍼레이티드 | 후면측 소스, 게이트 및/또는 드레인 단자들을 갖는 iii족 질화물계 라디오 주파수 증폭기들 |
| US12074123B2 (en) | 2020-04-03 | 2024-08-27 | Macom Technology Solutions Holdings, Inc. | Multi level radio frequency (RF) integrated circuit components including passive devices |
| JP7474349B2 (ja) | 2020-04-03 | 2024-04-24 | ウルフスピード インコーポレイテッド | Ｒｆ増幅器パッケージ |
| JP2023049404A (ja) * | 2021-09-29 | 2023-04-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
| WO2023188971A1 (ja) * | 2022-03-28 | 2023-10-05 | ヌヴォトンテクノロジージャパン株式会社 | 電力増幅用半導体装置 |
| US12327778B2 (en) | 2022-06-20 | 2025-06-10 | Nxp Usa, Inc. | Transistor die with primary and ancillary transistor elements |
| US12599008B2 (en) * | 2023-04-06 | 2026-04-07 | Nxp Usa, Inc. | Transistor with source manifold in non-active die region |
| EP4468365A1 (en) * | 2023-05-20 | 2024-11-27 | NXP USA, Inc. | Transistor die with primary and ancillary transistor elements |
| US20250167077A1 (en) * | 2023-11-17 | 2025-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structures with through via |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596570B2 (en) | 2001-06-06 | 2003-07-22 | International Business Machines Corporation | SOI device with reduced junction capacitance |
| US6969909B2 (en) | 2002-12-20 | 2005-11-29 | Vlt, Inc. | Flip chip FET device |
| US6897561B2 (en) | 2003-06-06 | 2005-05-24 | Semiconductor Components Industries, Llc | Semiconductor power device having a diamond shaped metal interconnect scheme |
| US7290864B2 (en) | 2005-09-30 | 2007-11-06 | Lexmark International, Inc. | Heater chips with a reduced number of bondpads |
| JP5407667B2 (ja) | 2008-11-05 | 2014-02-05 | 株式会社村田製作所 | 半導体装置 |
| US8293616B2 (en) | 2009-02-24 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabrication of semiconductor devices with low capacitance |
| JP5985393B2 (ja) | 2009-08-04 | 2016-09-06 | ジーエーエヌ システムズ インコーポレイテッド | アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ |
| JP2012023212A (ja) | 2010-07-14 | 2012-02-02 | Sumitomo Electric Ind Ltd | 半導体装置 |
| US9064712B2 (en) | 2010-08-12 | 2015-06-23 | Freescale Semiconductor Inc. | Monolithic microwave integrated circuit |
| US8760945B2 (en) | 2011-03-28 | 2014-06-24 | Samsung Electronics Co., Ltd. | Memory devices, systems and methods employing command/address calibration |
| US8816775B2 (en) | 2012-09-13 | 2014-08-26 | Freescale Semiconductor, Inc. | Quiescent current determination using in-package voltage measurements |
| CN203423656U (zh) | 2013-07-25 | 2014-02-05 | 中兴通讯股份有限公司 | 一种Doherty功放 |
| US10075132B2 (en) | 2015-03-24 | 2018-09-11 | Nxp Usa, Inc. | RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof |
| US9960145B2 (en) | 2015-03-25 | 2018-05-01 | Qorvo Us, Inc. | Flip chip module with enhanced properties |
| EP3428971B1 (en) | 2017-07-12 | 2020-09-09 | Nxp B.V. | A semiconductor switch device and method |
| US10734303B2 (en) | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
| EP3768794B1 (en) | 2018-03-22 | 2021-04-28 | 3M Innovative Properties Company | Charge-modified particles and methods of making the same |
| JP2019179857A (ja) | 2018-03-30 | 2019-10-17 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| US10594276B2 (en) | 2018-07-03 | 2020-03-17 | Nxp Usa, Inc. | Multi-path amplifier circuit or system and methods of implementation thereof |
| US10600746B2 (en) | 2018-07-19 | 2020-03-24 | Cree, Inc. | Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors |
| US10629526B1 (en) | 2018-10-11 | 2020-04-21 | Nxp Usa, Inc. | Transistor with non-circular via connections in two orientations |
| JP6854985B2 (ja) * | 2018-11-30 | 2021-04-07 | 三菱電機株式会社 | 半導体装置 |
| US11444044B2 (en) * | 2019-12-31 | 2022-09-13 | Nxp Usa, Inc. | Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies |
| US12166003B2 (en) * | 2020-04-03 | 2024-12-10 | Macom Technology Solutions Holdings, Inc. | RF amplifier devices including top side contacts and methods of manufacturing |
-
2020
- 2020-08-04 US US16/984,286 patent/US11387169B2/en active Active
-
2021
- 2021-06-11 JP JP2021097756A patent/JP7614953B2/ja active Active
- 2021-06-25 CN CN202110708791.3A patent/CN114068580A/zh active Pending
- 2021-07-22 EP EP21187256.9A patent/EP3958326A1/en active Pending
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