JP7614953B2 - トランジスタの活性領域内にｉ／ｏポートを備えるトランジスタ - Google Patents

トランジスタの活性領域内にｉ／ｏポートを備えるトランジスタ Download PDF

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JP7614953B2
JP7614953B2 JP2021097756A JP2021097756A JP7614953B2 JP 7614953 B2 JP7614953 B2 JP 7614953B2 JP 2021097756 A JP2021097756 A JP 2021097756A JP 2021097756 A JP2021097756 A JP 2021097756A JP 7614953 B2 JP7614953 B2 JP 7614953B2
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Japan
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common
finger
input
output
fingers
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Japanese (ja)
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JP2022029417A (ja
JP2022029417A5 (https=
Inventor
カリル イブラヒム
キム ケビン
カビール フマユーン
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NXP USA Inc
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NXP USA Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/998—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021097756A 2020-08-04 2021-06-11 トランジスタの活性領域内にｉ／ｏポートを備えるトランジスタ Active JP7614953B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/984,286 US11387169B2 (en) 2020-08-04 2020-08-04 Transistor with I/O ports in an active area of the transistor
US16/984,286 2020-08-04

Publications (3)

Publication Number Publication Date
JP2022029417A JP2022029417A (ja) 2022-02-17
JP2022029417A5 JP2022029417A5 (https=) 2024-06-03
JP7614953B2 true JP7614953B2 (ja) 2025-01-16

Family

ID=77042731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021097756A Active JP7614953B2 (ja) 2020-08-04 2021-06-11 トランジスタの活性領域内にｉ／ｏポートを備えるトランジスタ

Country Status (4)

Country Link
US (1) US11387169B2 (https=)
EP (1) EP3958326A1 (https=)
JP (1) JP7614953B2 (https=)
CN (1) CN114068580A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7685129B2 (ja) 2020-04-03 2025-05-29 マコム テクノロジー ソリューションズ ホールディングス， インコーポレイテッド ソース、ゲート及び／又はドレイン導電性ビアを有するｉｉｉ族窒化物ベースの高周波トランジスタ増幅器
KR102880739B1 (ko) * 2020-04-03 2025-11-07 메이콤 테크놀로지 솔루션즈 홀딩스, 인코퍼레이티드 후면측 소스, 게이트 및/또는 드레인 단자들을 갖는 iii족 질화물계 라디오 주파수 증폭기들
US12074123B2 (en) 2020-04-03 2024-08-27 Macom Technology Solutions Holdings, Inc. Multi level radio frequency (RF) integrated circuit components including passive devices
JP7474349B2 (ja) 2020-04-03 2024-04-24 ウルフスピード インコーポレイテッド Ｒｆ増幅器パッケージ
JP2023049404A (ja) * 2021-09-29 2023-04-10 住友電工デバイス・イノベーション株式会社 半導体装置
WO2023188971A1 (ja) * 2022-03-28 2023-10-05 ヌヴォトンテクノロジージャパン株式会社 電力増幅用半導体装置
US12327778B2 (en) 2022-06-20 2025-06-10 Nxp Usa, Inc. Transistor die with primary and ancillary transistor elements
US12599008B2 (en) * 2023-04-06 2026-04-07 Nxp Usa, Inc. Transistor with source manifold in non-active die region
EP4468365A1 (en) * 2023-05-20 2024-11-27 NXP USA, Inc. Transistor die with primary and ancillary transistor elements
US20250167077A1 (en) * 2023-11-17 2025-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures with through via

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019179857A (ja) 2018-03-30 2019-10-17 株式会社東芝 半導体装置および半導体装置の製造方法
WO2020018761A2 (en) 2018-07-19 2020-01-23 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having isolation structures
US20200194368A1 (en) 2018-10-11 2020-06-18 Nxp Usa, Inc. Transistor with non-circular via connections in two orientations

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596570B2 (en) 2001-06-06 2003-07-22 International Business Machines Corporation SOI device with reduced junction capacitance
US6969909B2 (en) 2002-12-20 2005-11-29 Vlt, Inc. Flip chip FET device
US6897561B2 (en) 2003-06-06 2005-05-24 Semiconductor Components Industries, Llc Semiconductor power device having a diamond shaped metal interconnect scheme
US7290864B2 (en) 2005-09-30 2007-11-06 Lexmark International, Inc. Heater chips with a reduced number of bondpads
JP5407667B2 (ja) 2008-11-05 2014-02-05 株式会社村田製作所 半導体装置
US8293616B2 (en) 2009-02-24 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabrication of semiconductor devices with low capacitance
JP5985393B2 (ja) 2009-08-04 2016-09-06 ジーエーエヌ システムズ インコーポレイテッド アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ
JP2012023212A (ja) 2010-07-14 2012-02-02 Sumitomo Electric Ind Ltd 半導体装置
US9064712B2 (en) 2010-08-12 2015-06-23 Freescale Semiconductor Inc. Monolithic microwave integrated circuit
US8760945B2 (en) 2011-03-28 2014-06-24 Samsung Electronics Co., Ltd. Memory devices, systems and methods employing command/address calibration
US8816775B2 (en) 2012-09-13 2014-08-26 Freescale Semiconductor, Inc. Quiescent current determination using in-package voltage measurements
CN203423656U (zh) 2013-07-25 2014-02-05 中兴通讯股份有限公司 一种Doherty功放
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9960145B2 (en) 2015-03-25 2018-05-01 Qorvo Us, Inc. Flip chip module with enhanced properties
EP3428971B1 (en) 2017-07-12 2020-09-09 Nxp B.V. A semiconductor switch device and method
US10734303B2 (en) 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
EP3768794B1 (en) 2018-03-22 2021-04-28 3M Innovative Properties Company Charge-modified particles and methods of making the same
US10594276B2 (en) 2018-07-03 2020-03-17 Nxp Usa, Inc. Multi-path amplifier circuit or system and methods of implementation thereof
JP6854985B2 (ja) * 2018-11-30 2021-04-07 三菱電機株式会社 半導体装置
US11444044B2 (en) * 2019-12-31 2022-09-13 Nxp Usa, Inc. Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies
US12166003B2 (en) * 2020-04-03 2024-12-10 Macom Technology Solutions Holdings, Inc. RF amplifier devices including top side contacts and methods of manufacturing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019179857A (ja) 2018-03-30 2019-10-17 株式会社東芝 半導体装置および半導体装置の製造方法
WO2020018761A2 (en) 2018-07-19 2020-01-23 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having isolation structures
JP2021531654A (ja) 2018-07-19 2021-11-18 クリー インコーポレイテッドCree Inc. 無線周波数トランジスタ増幅器及び絶縁構造を有する他のマルチセルトランジスタ
US20200194368A1 (en) 2018-10-11 2020-06-18 Nxp Usa, Inc. Transistor with non-circular via connections in two orientations

Also Published As

Publication number Publication date
EP3958326A1 (en) 2022-02-23
US11387169B2 (en) 2022-07-12
CN114068580A (zh) 2022-02-18
JP2022029417A (ja) 2022-02-17
US20220044986A1 (en) 2022-02-10

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