CN114068580A - 在晶体管的有源区域中具有i/o端口的晶体管 - Google Patents

在晶体管的有源区域中具有i/o端口的晶体管 Download PDF

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Publication number
CN114068580A
CN114068580A CN202110708791.3A CN202110708791A CN114068580A CN 114068580 A CN114068580 A CN 114068580A CN 202110708791 A CN202110708791 A CN 202110708791A CN 114068580 A CN114068580 A CN 114068580A
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China
Prior art keywords
common
output
input
finger
fingers
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Pending
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CN202110708791.3A
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English (en)
Chinese (zh)
Inventor
I·克哈莉
K·金
H·卡比尔
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NXP USA Inc
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NXP USA Inc
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Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of CN114068580A publication Critical patent/CN114068580A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/998—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202110708791.3A 2020-08-04 2021-06-25 在晶体管的有源区域中具有i/o端口的晶体管 Pending CN114068580A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/984,286 US11387169B2 (en) 2020-08-04 2020-08-04 Transistor with I/O ports in an active area of the transistor
US16/984,286 2020-08-04

Publications (1)

Publication Number Publication Date
CN114068580A true CN114068580A (zh) 2022-02-18

Family

ID=77042731

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110708791.3A Pending CN114068580A (zh) 2020-08-04 2021-06-25 在晶体管的有源区域中具有i/o端口的晶体管

Country Status (4)

Country Link
US (1) US11387169B2 (https=)
EP (1) EP3958326A1 (https=)
JP (1) JP7614953B2 (https=)
CN (1) CN114068580A (https=)

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JP7685129B2 (ja) 2020-04-03 2025-05-29 マコム テクノロジー ソリューションズ ホールディングス， インコーポレイテッド ソース、ゲート及び／又はドレイン導電性ビアを有するｉｉｉ族窒化物ベースの高周波トランジスタ増幅器
KR102880739B1 (ko) * 2020-04-03 2025-11-07 메이콤 테크놀로지 솔루션즈 홀딩스, 인코퍼레이티드 후면측 소스, 게이트 및/또는 드레인 단자들을 갖는 iii족 질화물계 라디오 주파수 증폭기들
US12074123B2 (en) 2020-04-03 2024-08-27 Macom Technology Solutions Holdings, Inc. Multi level radio frequency (RF) integrated circuit components including passive devices
JP7474349B2 (ja) 2020-04-03 2024-04-24 ウルフスピード インコーポレイテッド Ｒｆ増幅器パッケージ
JP2023049404A (ja) * 2021-09-29 2023-04-10 住友電工デバイス・イノベーション株式会社 半導体装置
WO2023188971A1 (ja) * 2022-03-28 2023-10-05 ヌヴォトンテクノロジージャパン株式会社 電力増幅用半導体装置
US12327778B2 (en) 2022-06-20 2025-06-10 Nxp Usa, Inc. Transistor die with primary and ancillary transistor elements
US12599008B2 (en) * 2023-04-06 2026-04-07 Nxp Usa, Inc. Transistor with source manifold in non-active die region
EP4468365A1 (en) * 2023-05-20 2024-11-27 NXP USA, Inc. Transistor die with primary and ancillary transistor elements
US20250167077A1 (en) * 2023-11-17 2025-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures with through via

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US6596570B2 (en) 2001-06-06 2003-07-22 International Business Machines Corporation SOI device with reduced junction capacitance
US6969909B2 (en) 2002-12-20 2005-11-29 Vlt, Inc. Flip chip FET device
US6897561B2 (en) 2003-06-06 2005-05-24 Semiconductor Components Industries, Llc Semiconductor power device having a diamond shaped metal interconnect scheme
US7290864B2 (en) 2005-09-30 2007-11-06 Lexmark International, Inc. Heater chips with a reduced number of bondpads
JP5407667B2 (ja) 2008-11-05 2014-02-05 株式会社村田製作所 半導体装置
US8293616B2 (en) 2009-02-24 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabrication of semiconductor devices with low capacitance
JP5985393B2 (ja) 2009-08-04 2016-09-06 ジーエーエヌ システムズ インコーポレイテッド アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ
JP2012023212A (ja) 2010-07-14 2012-02-02 Sumitomo Electric Ind Ltd 半導体装置
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US8816775B2 (en) 2012-09-13 2014-08-26 Freescale Semiconductor, Inc. Quiescent current determination using in-package voltage measurements
CN203423656U (zh) 2013-07-25 2014-02-05 中兴通讯股份有限公司 一种Doherty功放
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9960145B2 (en) 2015-03-25 2018-05-01 Qorvo Us, Inc. Flip chip module with enhanced properties
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JP2019179857A (ja) 2018-03-30 2019-10-17 株式会社東芝 半導体装置および半導体装置の製造方法
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JP6854985B2 (ja) * 2018-11-30 2021-04-07 三菱電機株式会社 半導体装置
US11444044B2 (en) * 2019-12-31 2022-09-13 Nxp Usa, Inc. Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies
US12166003B2 (en) * 2020-04-03 2024-12-10 Macom Technology Solutions Holdings, Inc. RF amplifier devices including top side contacts and methods of manufacturing

Also Published As

Publication number Publication date
EP3958326A1 (en) 2022-02-23
US11387169B2 (en) 2022-07-12
JP2022029417A (ja) 2022-02-17
JP7614953B2 (ja) 2025-01-16
US20220044986A1 (en) 2022-02-10

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