JP2022006924A - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- JP2022006924A JP2022006924A JP2020109510A JP2020109510A JP2022006924A JP 2022006924 A JP2022006924 A JP 2022006924A JP 2020109510 A JP2020109510 A JP 2020109510A JP 2020109510 A JP2020109510 A JP 2020109510A JP 2022006924 A JP2022006924 A JP 2022006924A
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- Japan
- Prior art keywords
- lead frame
- power module
- opening
- substrate
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 33
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 238000005452 bending Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
Description
2…ケース
3…ベースプレート
4…主端子(入出力端子)
5…電極端子(センス端子,制御端子,補助端子)
6,12…基板
7,13…絶縁層
8,14…金属回路層
9,15…金属層
10…はんだ
11,16…パワー半導体チップ
17…リードフレーム
18…開口部
19…封止樹脂
20…樹脂表面
21…気泡
22…切り欠き
23…突出部(抵抗値補償部)
24…スリット
Claims (11)
- ベースプレートと、
前記ベースプレート上に配置された基板と、
前記基板上に配置されたパワー半導体チップと、
相互接続配線となる板状のリードフレームと、
前記ベースプレートに接続されて、前記基板と前記パワー半導体チップと前記リードフレームを内包するケースと、
前記ケース内に充填されて、前記基板と前記パワー半導体チップと前記リードフレームを封止する封止樹脂と、を備え、
前記リードフレームの少なくとも一部は上に凸の形状を有しており、前記上に凸の形状の頂部に前記リードフレームを上下に貫通する開口が設けられていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記開口は、略円形の開孔、略矩形のスリット、切り欠きのいずれかであることを特徴とするパワーモジュール。 - 請求項2に記載のパワーモジュールにおいて、
前記リードフレームの前記開口近傍に突出部が設けられていることを特徴とするパワーモジュール。 - 請求項3に記載のパワーモジュールにおいて、
前記突出部は、前記開口を設けることによる前記リードフレームの電気抵抗値上昇分を補償する抵抗値補償部であることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記開口は、前記基板と前記パワー半導体チップを接続するリードフレームに設けられていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記パワー半導体チップを複数備え、
前記開口は、前記複数のパワー半導体チップ同士を接続するリードフレームに設けられていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記ケースに配置された主端子を備え、
前記開口は、前記主端子と前記パワー半導体チップを接続するリードフレームに設けられていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記ケースに配置された電極端子を備え、
前記開口は、前記基板と前記電極端子を接続するリードフレームに設けられていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記上に凸の形状は、前記リードフレームが前記頂部から異なる二方向に傾斜を有することで形成されていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記上に凸の形状は、前記リードフレームを湾曲させることで形成されていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記ケース内に前記封止樹脂を充填する際、前記リードフレームの下方に発生する気泡を当該気泡の浮力により前記リードフレームの前記上に凸の形状に沿って前記開口に導き、前記開口を介して前記封止樹脂の表面に排出することを特徴とするパワーモジュール。
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