JP2021527952A - 高アスペクト比構造の効率的な洗浄およびエッチング - Google Patents
高アスペクト比構造の効率的な洗浄およびエッチング Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims description 43
- 238000004140 cleaning Methods 0.000 title claims description 42
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 85
- 238000012545 processing Methods 0.000 claims abstract description 71
- 239000007788 liquid Substances 0.000 claims abstract description 39
- 239000002904 solvent Substances 0.000 claims abstract description 35
- 239000000203 mixture Substances 0.000 claims abstract description 29
- 230000008016 vaporization Effects 0.000 claims abstract description 20
- 238000009834 vaporization Methods 0.000 claims abstract description 9
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 7
- 150000002367 halogens Chemical class 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 130
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 230000001590 oxidative effect Effects 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 5
- 150000002978 peroxides Chemical class 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 239000003586 protic polar solvent Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 48
- 238000006243 chemical reaction Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- -1 Sulfate Peroxide Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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Abstract
【選択図】 図3
Description
本出願は、2018年6月13日に出願された米国仮出願第62/684,415号の利益を主張する。上記で参照された出願の全体の開示は、参照により本明細書に組み込まれる。
Claims (19)
- 基板を処理するための方法であって、
a)処理チャンバ内に基板を配置することと、
b)気化溶媒およびガス混合物の少なくとも1つを前記処理チャンバに供給し、前記基板の露出面に共形液体層を形成することと、
c)前記処理チャンバから前記気化溶媒および前記ガス混合物の前記少なくとも1つを除去することと、
d)ハロゲン種を含む反応性ガスを前記処理チャンバに供給することと
を含み、
前記共形液体層は、前記反応性ガスを吸着し、前記基板の前記露出面をエッチングする反応性液体層を形成する、
方法。 - 請求項1に記載の方法であって、
前記反応性液体層は、前記基板の前記露出面と反応してガス生成物を生成する、方法。 - 請求項1に記載の方法であって、
前記基板の前記露出面は、残留物を形成することなくエッチングされる、方法。 - 請求項1に記載の方法であって、
気化溶媒およびガス混合物の前記少なくとも1つは、極性溶媒、水、過酸化物、イソプロピルアルコール、アセトン、四塩化炭素、ヘキサン、メタノール、およびエタノールからなる群から選択される、方法。 - 請求項4に記載の方法であって、
前記反応性ガスは、フッ化水素ガス、塩化水素ガス、および臭化水素ガスからなる群から選択される、方法。 - 請求項1に記載の方法であって、
前記基板は、深さと幅の比が5:1以上である複数の高アスペクト比(HAR)フィーチャを含む、方法。 - 請求項1に記載の方法であって、
前記気化溶媒および前記ガス混合物の前記少なくとも1つを前記処理チャンバに供給する前に、前記処理チャンバ内の圧力を1トル〜10トルの圧力範囲に設定することをさらに含む、方法。 - 請求項1に記載の方法であって、
前記気化溶媒および前記ガス混合物の前記少なくとも1つを前記処理チャンバに供給する前に、前記処理チャンバ内の処理温度を0℃〜400℃の温度範囲に設定することをさらに含む、方法。 - 請求項1に記載の方法であって、
前記反応性液体層は、10オングストローム/分〜100オングストローム/分の範囲のエッチング速度で前記露出面をエッチングする、方法。 - 請求項1に記載の方法であって、
a)〜d)を含むサイクルを複数回実施することをさらに含む、方法。 - 請求項10に記載の方法であって、
前記反応性液体層は、前記複数回のサイクルの各サイクル中に0.2オングストローム〜1オングストロームずつ前記露出面をエッチングする、方法。 - 請求項1に記載の方法であって、
b)の前に、
酸化性ガスを所定の期間にわたって前記処理チャンバに供給することと、
前記酸化性ガスを排出することと
をさらに含む、方法。 - 請求項12に記載の方法であって、
前記酸化性ガスは、分子状酸素、オゾン、過酸化水素、亜酸化窒素、および二酸化窒素からなる群から選択されるガスを含む、方法。 - 請求項12に記載の方法であって、
前記酸化性ガスは、リモートプラズマにより供給される、方法。 - 請求項12に記載の方法であって、
前記酸化性ガスは、100℃〜400℃の範囲の処理温度で供給される、方法。 - 請求項12に記載の方法であって、
d)の後に、前記基板のウェット洗浄を実施することをさらに含む、方法。 - 請求項12に記載の方法であって、
前記反応性液体層は、前記基板の前記露出面と反応してガス生成物を生成する、方法。 - 請求項1に記載の方法であって、
前記基板の前記露出面は、残留物を形成することなくエッチングされる、方法。 - 請求項1に記載の方法であって、
a)〜d)は、誘導結合プラズマ(ICP)チャンバ内で実施される、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862684415P | 2018-06-13 | 2018-06-13 | |
US62/684,415 | 2018-06-13 | ||
PCT/US2019/036015 WO2019241060A1 (en) | 2018-06-13 | 2019-06-07 | Efficient cleaning and etching of high aspect ratio structures |
Publications (3)
Publication Number | Publication Date |
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JP2021527952A true JP2021527952A (ja) | 2021-10-14 |
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US11282696B2 (en) * | 2019-11-22 | 2022-03-22 | Dangsheng Ni | Method and device for wet processing integrated circuit substrates using a mixture of chemical steam vapors and chemical gases |
CN114908389A (zh) * | 2022-06-07 | 2022-08-16 | 上海华力集成电路制造有限公司 | 高深宽比结构中电镀液的填充方法 |
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US11488831B2 (en) | 2022-11-01 |
TW202013435A (zh) | 2020-04-01 |
US20210249274A1 (en) | 2021-08-12 |
CN112335016A (zh) | 2021-02-05 |
US20230035732A1 (en) | 2023-02-02 |
WO2019241060A1 (en) | 2019-12-19 |
TWI834675B (zh) | 2024-03-11 |
KR20210011493A (ko) | 2021-02-01 |
JP7426346B2 (ja) | 2024-02-01 |
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