JP2021524670A5 - - Google Patents

Info

Publication number
JP2021524670A5
JP2021524670A5 JP2020565287A JP2020565287A JP2021524670A5 JP 2021524670 A5 JP2021524670 A5 JP 2021524670A5 JP 2020565287 A JP2020565287 A JP 2020565287A JP 2020565287 A JP2020565287 A JP 2020565287A JP 2021524670 A5 JP2021524670 A5 JP 2021524670A5
Authority
JP
Japan
Prior art keywords
temperature
substrate
substrates
processing steps
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020565287A
Other languages
English (en)
Japanese (ja)
Other versions
JP7326344B2 (ja
JP2021524670A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/027494 external-priority patent/WO2019226252A1/en
Publication of JP2021524670A publication Critical patent/JP2021524670A/ja
Publication of JP2021524670A5 publication Critical patent/JP2021524670A5/ja
Application granted granted Critical
Publication of JP7326344B2 publication Critical patent/JP7326344B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020565287A 2018-05-24 2019-04-15 空間分解ウエハ温度制御のための仮想センサ Active JP7326344B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862676156P 2018-05-24 2018-05-24
US62/676,156 2018-05-24
PCT/US2019/027494 WO2019226252A1 (en) 2018-05-24 2019-04-15 Virtual sensor for spatially resolved wafer temperature control

Publications (3)

Publication Number Publication Date
JP2021524670A JP2021524670A (ja) 2021-09-13
JP2021524670A5 true JP2021524670A5 (https=) 2022-04-21
JP7326344B2 JP7326344B2 (ja) 2023-08-15

Family

ID=68614135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020565287A Active JP7326344B2 (ja) 2018-05-24 2019-04-15 空間分解ウエハ温度制御のための仮想センサ

Country Status (7)

Country Link
US (1) US11024522B2 (https=)
JP (1) JP7326344B2 (https=)
KR (1) KR102757324B1 (https=)
CN (1) CN112074941B (https=)
SG (1) SG11202010209PA (https=)
TW (1) TWI837124B (https=)
WO (1) WO2019226252A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
US20220084842A1 (en) * 2020-09-11 2022-03-17 Applied Materials, Inc. Antifragile systems for semiconductor processing equipment using multiple special sensors and algorithms
US11261538B1 (en) 2020-09-21 2022-03-01 Applied Materials, Inc. In-situ temperature mapping for epi chamber
TW202240734A (zh) * 2020-12-15 2022-10-16 美商蘭姆研究公司 多步驟半導體製造程序中的機器學習
KR102252144B1 (ko) * 2021-03-31 2021-05-17 (주)알티엠 플라즈마의 동작을 확인하는 전자 장치 및 그 동작 방법
US12360510B2 (en) 2021-04-20 2025-07-15 Lam Research Corporation Large spot spectral sensing to control spatial setpoints
KR102579155B1 (ko) * 2021-06-08 2023-09-18 세메스 주식회사 기판 처리 방법 및 장치, 온도 제어 방법
KR102467933B1 (ko) 2021-06-10 2022-11-16 경희대학교 산학협력단 디지털 트윈 기반의 온도분포 예측방법 및 온도분포 예측장치
KR102393813B1 (ko) * 2022-02-24 2022-05-04 주식회사 아크트리아 딥러닝 기반 반도체 약액의 정밀 온도 제어 시스템
TW202405594A (zh) * 2022-03-24 2024-02-01 日商東京威力科創股份有限公司 解析裝置、基板處理系統、基板處理裝置、解析方法及解析程式

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6560503B1 (en) 1999-10-05 2003-05-06 Advanced Micro Devices, Inc. Method and apparatus for monitoring controller performance using statistical process control
JP4480056B2 (ja) 1999-12-06 2010-06-16 コバレントマテリアル株式会社 半導体基板の昇降温制御方法とその装置
US7016754B2 (en) 2003-05-08 2006-03-21 Onwafer Technologies, Inc. Methods of and apparatus for controlling process profiles
US8050900B2 (en) 2003-09-30 2011-11-01 Tokyo Electron Limited System and method for using first-principles simulation to provide virtual sensors that facilitate a semiconductor manufacturing process
US7127358B2 (en) 2004-03-30 2006-10-24 Tokyo Electron Limited Method and system for run-to-run control
US7415312B2 (en) * 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
JP4756845B2 (ja) 2004-10-12 2011-08-24 東京エレクトロン株式会社 温度測定装置,温度測定方法,温度測定システム,制御システム,制御方法
JP2006113724A (ja) * 2004-10-13 2006-04-27 Omron Corp 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体
US7838072B2 (en) * 2005-01-26 2010-11-23 Tokyo Electron Limited Method and apparatus for monolayer deposition (MLD)
WO2007005489A2 (en) * 2005-07-05 2007-01-11 Mattson Technology, Inc. Method and system for determining optical properties of semiconductor wafers
US20070091541A1 (en) 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using feed forward thermal control
JP4658818B2 (ja) 2006-01-19 2011-03-23 株式会社山武 温度推定方法および装置
US7787685B2 (en) * 2006-04-17 2010-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Extracting ordinary and extraordinary optical characteristics for critical dimension measurement of anisotropic materials
JP5203612B2 (ja) 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5433171B2 (ja) 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
JP5296022B2 (ja) 2010-08-09 2013-09-25 東京エレクトロン株式会社 熱処理方法及びその熱処理方法を実行させるためのプログラムを記録した記録媒体並びに熱処理装置
US20120118225A1 (en) * 2010-09-16 2012-05-17 Applied Materials, Inc. Epitaxial growth temperature control in led manufacture
US8552346B2 (en) 2011-05-20 2013-10-08 Applied Materials, Inc. Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber
JP2013161857A (ja) * 2012-02-02 2013-08-19 Tokyo Electron Ltd 熱処理装置及び熱処理装置の制御方法
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
US10079165B2 (en) 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk
KR102233925B1 (ko) * 2014-11-20 2021-03-30 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
KR20180011119A (ko) * 2015-05-22 2018-01-31 어플라이드 머티어리얼스, 인코포레이티드 방위방향으로 튜닝가능한 다중-구역 정전 척
US10903097B2 (en) * 2018-03-30 2021-01-26 Axcelis Technologies, Inc. In-situ wafer temperature measurement and control

Similar Documents

Publication Publication Date Title
JP2021524670A5 (https=)
TW200917402A (en) Heat processing apparatus, method of automatically tuning control constants, and storage medium
CN111665882B (zh) 温度控制方法及系统
US20220398359A1 (en) Digital twin based temperature distribution estimating method and temperature distribution estimating apparatus
JP2006113724A (ja) 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体
JP2005203743A5 (https=)
JP6849319B2 (ja) 熱処理ユニットのための較正方法
JP2019532287A5 (https=)
TWI897323B (zh) 製程參數的確定方法及半導體製程設備
TW201306640A (zh) 電阻加熱加熱器之劣化檢測裝置及方法
JP7763187B2 (ja) 部品の表面状態をモニターする方法
EP2690372B1 (en) Operation of a thermal comfort system
JP4978001B2 (ja) 温度制御方法、温度制御装置および熱処理装置
CN118013793B (zh) 一种晶体生长方法、系统、装置以及存储介质
CN113591276B (zh) 一种获取退火炉的带钢辐射系数的方法及系统
JP2023544567A5 (https=)
JPWO2022191199A5 (https=)
JP2007088394A5 (https=)
JP6697772B1 (ja) 半導体ウエハ製造方法、半導体ウエハ製造システム、および、半導体ウエハ製造用のコンピュータープログラム
WO2025166570A1 (zh) 一种晶体生长方法、系统、装置以及存储介质
CN111898298A (zh) 一种基于有限元模型数值仿真的pcr基座温度控制系统的参数优化方法
JPH01184233A (ja) 連続焼鈍炉の板温制御方法
JP2022073176A (ja) 酸素濃度予測システムおよび酸素濃度制御システム
CN116642270B (zh) 热水器的控制方法、装置、控制设备及热水器设备
JPH0722129B2 (ja) 酸化・拡散装置内ウエハ温度制御システム