KR102757324B1 - 공간적으로 분해된 웨이퍼 온도 제어를 위한 가상 센서 - Google Patents
공간적으로 분해된 웨이퍼 온도 제어를 위한 가상 센서 Download PDFInfo
- Publication number
- KR102757324B1 KR102757324B1 KR1020207036794A KR20207036794A KR102757324B1 KR 102757324 B1 KR102757324 B1 KR 102757324B1 KR 1020207036794 A KR1020207036794 A KR 1020207036794A KR 20207036794 A KR20207036794 A KR 20207036794A KR 102757324 B1 KR102757324 B1 KR 102757324B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- temperature
- substrates
- during
- determining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H01L21/67248—
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Program-control systems
- G05B19/02—Program-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form
- G05B19/4155—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form characterised by program execution, i.e. part program or machine function execution, e.g. selection of a program
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N20/00—Machine learning
-
- H01L21/324—
-
- H01L21/67103—
-
- H01L21/67253—
-
- H01L21/67276—
-
- H01L21/6831—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0612—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/50—Machine tool, machine tool null till machine tool work handling
- G05B2219/50333—Temperature
Landscapes
- Engineering & Computer Science (AREA)
- Software Systems (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Evolutionary Computation (AREA)
- Medical Informatics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Data Mining & Analysis (AREA)
- Mathematical Physics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Human Computer Interaction (AREA)
- Manufacturing & Machinery (AREA)
- Artificial Intelligence (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862676156P | 2018-05-24 | 2018-05-24 | |
| US62/676,156 | 2018-05-24 | ||
| PCT/US2019/027494 WO2019226252A1 (en) | 2018-05-24 | 2019-04-15 | Virtual sensor for spatially resolved wafer temperature control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210000731A KR20210000731A (ko) | 2021-01-05 |
| KR102757324B1 true KR102757324B1 (ko) | 2025-01-20 |
Family
ID=68614135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207036794A Active KR102757324B1 (ko) | 2018-05-24 | 2019-04-15 | 공간적으로 분해된 웨이퍼 온도 제어를 위한 가상 센서 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11024522B2 (https=) |
| JP (1) | JP7326344B2 (https=) |
| KR (1) | KR102757324B1 (https=) |
| CN (1) | CN112074941B (https=) |
| SG (1) | SG11202010209PA (https=) |
| TW (1) | TWI837124B (https=) |
| WO (1) | WO2019226252A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7244348B2 (ja) * | 2019-05-13 | 2023-03-22 | 東京エレクトロン株式会社 | プラズマ処理装置、温度制御方法および温度制御プログラム |
| US20220084842A1 (en) * | 2020-09-11 | 2022-03-17 | Applied Materials, Inc. | Antifragile systems for semiconductor processing equipment using multiple special sensors and algorithms |
| US11261538B1 (en) | 2020-09-21 | 2022-03-01 | Applied Materials, Inc. | In-situ temperature mapping for epi chamber |
| TW202240734A (zh) * | 2020-12-15 | 2022-10-16 | 美商蘭姆研究公司 | 多步驟半導體製造程序中的機器學習 |
| KR102252144B1 (ko) * | 2021-03-31 | 2021-05-17 | (주)알티엠 | 플라즈마의 동작을 확인하는 전자 장치 및 그 동작 방법 |
| US12360510B2 (en) | 2021-04-20 | 2025-07-15 | Lam Research Corporation | Large spot spectral sensing to control spatial setpoints |
| KR102579155B1 (ko) * | 2021-06-08 | 2023-09-18 | 세메스 주식회사 | 기판 처리 방법 및 장치, 온도 제어 방법 |
| KR102467933B1 (ko) | 2021-06-10 | 2022-11-16 | 경희대학교 산학협력단 | 디지털 트윈 기반의 온도분포 예측방법 및 온도분포 예측장치 |
| KR102393813B1 (ko) * | 2022-02-24 | 2022-05-04 | 주식회사 아크트리아 | 딥러닝 기반 반도체 약액의 정밀 온도 제어 시스템 |
| TW202405594A (zh) * | 2022-03-24 | 2024-02-01 | 日商東京威力科創股份有限公司 | 解析裝置、基板處理系統、基板處理裝置、解析方法及解析程式 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050267606A1 (en) | 2004-05-25 | 2005-12-01 | Bartlett James R Jr | Process module tuning |
| JP2006112826A (ja) | 2004-10-12 | 2006-04-27 | Tokyo Electron Ltd | 温度測定装置,温度測定方法,温度測定システム,制御システム,制御方法 |
| US20120031892A1 (en) | 2010-08-09 | 2012-02-09 | Tokyo Electron Limited | Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus |
| US10903097B2 (en) | 2018-03-30 | 2021-01-26 | Axcelis Technologies, Inc. | In-situ wafer temperature measurement and control |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6560503B1 (en) | 1999-10-05 | 2003-05-06 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring controller performance using statistical process control |
| JP4480056B2 (ja) | 1999-12-06 | 2010-06-16 | コバレントマテリアル株式会社 | 半導体基板の昇降温制御方法とその装置 |
| US7016754B2 (en) | 2003-05-08 | 2006-03-21 | Onwafer Technologies, Inc. | Methods of and apparatus for controlling process profiles |
| US8050900B2 (en) | 2003-09-30 | 2011-11-01 | Tokyo Electron Limited | System and method for using first-principles simulation to provide virtual sensors that facilitate a semiconductor manufacturing process |
| US7127358B2 (en) | 2004-03-30 | 2006-10-24 | Tokyo Electron Limited | Method and system for run-to-run control |
| JP2006113724A (ja) * | 2004-10-13 | 2006-04-27 | Omron Corp | 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体 |
| US7838072B2 (en) * | 2005-01-26 | 2010-11-23 | Tokyo Electron Limited | Method and apparatus for monolayer deposition (MLD) |
| WO2007005489A2 (en) * | 2005-07-05 | 2007-01-11 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
| US20070091541A1 (en) | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor using feed forward thermal control |
| JP4658818B2 (ja) | 2006-01-19 | 2011-03-23 | 株式会社山武 | 温度推定方法および装置 |
| US7787685B2 (en) * | 2006-04-17 | 2010-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extracting ordinary and extraordinary optical characteristics for critical dimension measurement of anisotropic materials |
| JP5203612B2 (ja) | 2007-01-17 | 2013-06-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5433171B2 (ja) | 2008-06-16 | 2014-03-05 | 株式会社日立ハイテクノロジーズ | 試料温度の制御方法 |
| US20120118225A1 (en) * | 2010-09-16 | 2012-05-17 | Applied Materials, Inc. | Epitaxial growth temperature control in led manufacture |
| US8552346B2 (en) | 2011-05-20 | 2013-10-08 | Applied Materials, Inc. | Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber |
| JP2013161857A (ja) * | 2012-02-02 | 2013-08-19 | Tokyo Electron Ltd | 熱処理装置及び熱処理装置の制御方法 |
| US9157730B2 (en) * | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
| US10079165B2 (en) | 2014-05-20 | 2018-09-18 | Applied Materials, Inc. | Electrostatic chuck with independent zone cooling and reduced crosstalk |
| KR102233925B1 (ko) * | 2014-11-20 | 2021-03-30 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
| KR20180011119A (ko) * | 2015-05-22 | 2018-01-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 방위방향으로 튜닝가능한 다중-구역 정전 척 |
-
2019
- 2019-04-15 KR KR1020207036794A patent/KR102757324B1/ko active Active
- 2019-04-15 CN CN201980030082.5A patent/CN112074941B/zh active Active
- 2019-04-15 JP JP2020565287A patent/JP7326344B2/ja active Active
- 2019-04-15 SG SG11202010209PA patent/SG11202010209PA/en unknown
- 2019-04-15 US US16/383,881 patent/US11024522B2/en active Active
- 2019-04-15 WO PCT/US2019/027494 patent/WO2019226252A1/en not_active Ceased
- 2019-04-29 TW TW108114849A patent/TWI837124B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050267606A1 (en) | 2004-05-25 | 2005-12-01 | Bartlett James R Jr | Process module tuning |
| JP2006112826A (ja) | 2004-10-12 | 2006-04-27 | Tokyo Electron Ltd | 温度測定装置,温度測定方法,温度測定システム,制御システム,制御方法 |
| US20120031892A1 (en) | 2010-08-09 | 2012-02-09 | Tokyo Electron Limited | Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus |
| US10903097B2 (en) | 2018-03-30 | 2021-01-26 | Axcelis Technologies, Inc. | In-situ wafer temperature measurement and control |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7326344B2 (ja) | 2023-08-15 |
| US11024522B2 (en) | 2021-06-01 |
| CN112074941A (zh) | 2020-12-11 |
| WO2019226252A1 (en) | 2019-11-28 |
| JP2021524670A (ja) | 2021-09-13 |
| SG11202010209PA (en) | 2020-12-30 |
| US20190362991A1 (en) | 2019-11-28 |
| CN112074941B (zh) | 2025-01-24 |
| KR20210000731A (ko) | 2021-01-05 |
| TW202011499A (zh) | 2020-03-16 |
| TWI837124B (zh) | 2024-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102757324B1 (ko) | 공간적으로 분해된 웨이퍼 온도 제어를 위한 가상 센서 | |
| US12474686B2 (en) | Substrate processing apparatus and substrate processing method | |
| CN114127904B (zh) | 半导体制造中基于多区加热器模型的控制 | |
| US10636630B2 (en) | Processing chamber and method with thermal control | |
| JP7313509B2 (ja) | プラズマ処理装置、温度制御方法および温度制御プログラム | |
| TWI842882B (zh) | 電漿處理裝置、溫度控制方法及溫度控制程式 | |
| CN111261486B (zh) | 等离子体处理装置、计算方法和记录介质 | |
| CN111009454B (zh) | 等离子体处理装置、监视方法以及记录介质 | |
| JP7202972B2 (ja) | プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム | |
| TWI840525B (zh) | 用以估計溫度的靜電卡盤加熱器電阻量測 | |
| JP2023099617A (ja) | プラズマ処理装置、監視方法および監視プログラム | |
| TWI878290B (zh) | 電漿處理裝置、計算方法及計算程式 | |
| US7802917B2 (en) | Method and apparatus for chuck thermal calibration | |
| TWI791558B (zh) | 用於半導體基板處理室的溫度控制的方法、非暫時性機器可讀儲存媒體以及系統 | |
| JP7527342B2 (ja) | プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム | |
| KR20250167512A (ko) | 정보 처리 장치 및 프로세스 조건 예측 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |