TWI837124B - 用於空間分辨晶圓溫度控制的虛擬感測器 - Google Patents

用於空間分辨晶圓溫度控制的虛擬感測器 Download PDF

Info

Publication number
TWI837124B
TWI837124B TW108114849A TW108114849A TWI837124B TW I837124 B TWI837124 B TW I837124B TW 108114849 A TW108114849 A TW 108114849A TW 108114849 A TW108114849 A TW 108114849A TW I837124 B TWI837124 B TW I837124B
Authority
TW
Taiwan
Prior art keywords
temperature
substrate
substrates
during
determining
Prior art date
Application number
TW108114849A
Other languages
English (en)
Chinese (zh)
Other versions
TW202011499A (zh
Inventor
希曼Ｐ 慕傑卡
尤威Ｐ 海勒
葛尼斯 巴拉蘇拔馬尼安
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202011499A publication Critical patent/TW202011499A/zh
Application granted granted Critical
Publication of TWI837124B publication Critical patent/TWI837124B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form
    • G05B19/4155—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form characterised by program execution, i.e. part program or machine function execution, e.g. selection of a program
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/50—Machine tool, machine tool null till machine tool work handling
    • G05B2219/50333—Temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • Artificial Intelligence (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW108114849A 2018-05-24 2019-04-29 用於空間分辨晶圓溫度控制的虛擬感測器 TWI837124B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862676156P 2018-05-24 2018-05-24
US62/676,156 2018-05-24

Publications (2)

Publication Number Publication Date
TW202011499A TW202011499A (zh) 2020-03-16
TWI837124B true TWI837124B (zh) 2024-04-01

Family

ID=68614135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108114849A TWI837124B (zh) 2018-05-24 2019-04-29 用於空間分辨晶圓溫度控制的虛擬感測器

Country Status (7)

Country Link
US (1) US11024522B2 (https=)
JP (1) JP7326344B2 (https=)
KR (1) KR102757324B1 (https=)
CN (1) CN112074941B (https=)
SG (1) SG11202010209PA (https=)
TW (1) TWI837124B (https=)
WO (1) WO2019226252A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
US20220084842A1 (en) * 2020-09-11 2022-03-17 Applied Materials, Inc. Antifragile systems for semiconductor processing equipment using multiple special sensors and algorithms
US11261538B1 (en) 2020-09-21 2022-03-01 Applied Materials, Inc. In-situ temperature mapping for epi chamber
TW202240734A (zh) * 2020-12-15 2022-10-16 美商蘭姆研究公司 多步驟半導體製造程序中的機器學習
KR102252144B1 (ko) * 2021-03-31 2021-05-17 (주)알티엠 플라즈마의 동작을 확인하는 전자 장치 및 그 동작 방법
US12360510B2 (en) 2021-04-20 2025-07-15 Lam Research Corporation Large spot spectral sensing to control spatial setpoints
KR102579155B1 (ko) * 2021-06-08 2023-09-18 세메스 주식회사 기판 처리 방법 및 장치, 온도 제어 방법
KR102467933B1 (ko) 2021-06-10 2022-11-16 경희대학교 산학협력단 디지털 트윈 기반의 온도분포 예측방법 및 온도분포 예측장치
KR102393813B1 (ko) * 2022-02-24 2022-05-04 주식회사 아크트리아 딥러닝 기반 반도체 약액의 정밀 온도 제어 시스템
TW202405594A (zh) * 2022-03-24 2024-02-01 日商東京威力科創股份有限公司 解析裝置、基板處理系統、基板處理裝置、解析方法及解析程式

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050267606A1 (en) * 2004-05-25 2005-12-01 Bartlett James R Jr Process module tuning
US20070242263A1 (en) * 2006-04-17 2007-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Extracting ordinary and extraordinary optical characteristics for critical dimension measurement of anisotropic materials
US20120031892A1 (en) * 2010-08-09 2012-02-09 Tokyo Electron Limited Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus
US20120231558A1 (en) * 2005-07-05 2012-09-13 Mattson Technology, Inc Method and system for determining optical properties of semiconductor wafers
US10903097B2 (en) * 2018-03-30 2021-01-26 Axcelis Technologies, Inc. In-situ wafer temperature measurement and control

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6560503B1 (en) 1999-10-05 2003-05-06 Advanced Micro Devices, Inc. Method and apparatus for monitoring controller performance using statistical process control
JP4480056B2 (ja) 1999-12-06 2010-06-16 コバレントマテリアル株式会社 半導体基板の昇降温制御方法とその装置
US7016754B2 (en) 2003-05-08 2006-03-21 Onwafer Technologies, Inc. Methods of and apparatus for controlling process profiles
US8050900B2 (en) 2003-09-30 2011-11-01 Tokyo Electron Limited System and method for using first-principles simulation to provide virtual sensors that facilitate a semiconductor manufacturing process
US7127358B2 (en) 2004-03-30 2006-10-24 Tokyo Electron Limited Method and system for run-to-run control
JP4756845B2 (ja) 2004-10-12 2011-08-24 東京エレクトロン株式会社 温度測定装置，温度測定方法，温度測定システム，制御システム，制御方法
JP2006113724A (ja) * 2004-10-13 2006-04-27 Omron Corp 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体
US7838072B2 (en) * 2005-01-26 2010-11-23 Tokyo Electron Limited Method and apparatus for monolayer deposition (MLD)
US20070091541A1 (en) 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using feed forward thermal control
JP4658818B2 (ja) 2006-01-19 2011-03-23 株式会社山武 温度推定方法および装置
JP5203612B2 (ja) 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5433171B2 (ja) 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
US20120118225A1 (en) * 2010-09-16 2012-05-17 Applied Materials, Inc. Epitaxial growth temperature control in led manufacture
US8552346B2 (en) 2011-05-20 2013-10-08 Applied Materials, Inc. Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber
JP2013161857A (ja) * 2012-02-02 2013-08-19 Tokyo Electron Ltd 熱処理装置及び熱処理装置の制御方法
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
US10079165B2 (en) 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk
KR102233925B1 (ko) * 2014-11-20 2021-03-30 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
KR20180011119A (ko) * 2015-05-22 2018-01-31 어플라이드 머티어리얼스, 인코포레이티드 방위방향으로 튜닝가능한 다중-구역 정전 척

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050267606A1 (en) * 2004-05-25 2005-12-01 Bartlett James R Jr Process module tuning
US20120231558A1 (en) * 2005-07-05 2012-09-13 Mattson Technology, Inc Method and system for determining optical properties of semiconductor wafers
US20070242263A1 (en) * 2006-04-17 2007-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Extracting ordinary and extraordinary optical characteristics for critical dimension measurement of anisotropic materials
US20120031892A1 (en) * 2010-08-09 2012-02-09 Tokyo Electron Limited Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus
US10903097B2 (en) * 2018-03-30 2021-01-26 Axcelis Technologies, Inc. In-situ wafer temperature measurement and control

Also Published As

Publication number Publication date
JP7326344B2 (ja) 2023-08-15
US11024522B2 (en) 2021-06-01
CN112074941A (zh) 2020-12-11
WO2019226252A1 (en) 2019-11-28
JP2021524670A (ja) 2021-09-13
SG11202010209PA (en) 2020-12-30
KR102757324B1 (ko) 2025-01-20
US20190362991A1 (en) 2019-11-28
CN112074941B (zh) 2025-01-24
KR20210000731A (ko) 2021-01-05
TW202011499A (zh) 2020-03-16

Similar Documents

Publication Publication Date Title
TWI837124B (zh) 用於空間分辨晶圓溫度控制的虛擬感測器
US12474686B2 (en) Substrate processing apparatus and substrate processing method
JP7313509B2 (ja) プラズマ処理装置、温度制御方法および温度制御プログラム
CN212084949U (zh) 处理基板的系统
TWI842882B (zh) 電漿處理裝置、溫度控制方法及溫度控制程式
JP5111030B2 (ja) 基板処理システムに用いられる耐浸食性絶縁層を有する温度制御された基板ホルダ
CN111009454B (zh) 等离子体处理装置、监视方法以及记录介质
JP7202972B2 (ja) プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
KR101744847B1 (ko) 플라즈마 처리 장치
TWI864175B (zh) 電漿處理裝置及電漿處理方法
TW202522683A (zh) 載置台及基板處理裝置
JP2023099617A (ja) プラズマ処理装置、監視方法および監視プログラム
TWI878290B (zh) 電漿處理裝置、計算方法及計算程式
US20250336697A1 (en) Substrate processing apparatus
TWI791558B (zh) 用於半導體基板處理室的溫度控制的方法、非暫時性機器可讀儲存媒體以及系統
JP7527342B2 (ja) プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
TW202427718A (zh) 用於支撐單元的控制方法、基板處理方法及基板處理設備
JP2025176776A (ja) 情報処理装置及びプロセス条件予測方法
WO2025142542A1 (ja) 基板処理装置及び基板温度制御方法