JP2021512477A5 - - Google Patents

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Publication number
JP2021512477A5
JP2021512477A5 JP2020562063A JP2020562063A JP2021512477A5 JP 2021512477 A5 JP2021512477 A5 JP 2021512477A5 JP 2020562063 A JP2020562063 A JP 2020562063A JP 2020562063 A JP2020562063 A JP 2020562063A JP 2021512477 A5 JP2021512477 A5 JP 2021512477A5
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JP
Japan
Prior art keywords
electrode portion
electrode
processing apparatus
substrate processing
vertical direction
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JP2020562063A
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English (en)
Japanese (ja)
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JP2021512477A (ja
JP7254097B2 (ja
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Priority claimed from KR1020180010814A external-priority patent/KR102515110B1/ko
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Publication of JP2021512477A5 publication Critical patent/JP2021512477A5/ja
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Publication of JP7254097B2 publication Critical patent/JP7254097B2/ja
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JP2020562063A 2018-01-29 2019-01-29 基板処理装置 Active JP7254097B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020180010814A KR102515110B1 (ko) 2018-01-29 2018-01-29 기판처리장치
KR10-2018-0010814 2018-01-29
PCT/KR2019/001196 WO2019147097A1 (ko) 2018-01-29 2019-01-29 기판처리장치

Publications (3)

Publication Number Publication Date
JP2021512477A JP2021512477A (ja) 2021-05-13
JP2021512477A5 true JP2021512477A5 (enExample) 2022-01-11
JP7254097B2 JP7254097B2 (ja) 2023-04-07

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ID=67395493

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JP2020562063A Active JP7254097B2 (ja) 2018-01-29 2019-01-29 基板処理装置

Country Status (6)

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US (1) US11551913B2 (enExample)
JP (1) JP7254097B2 (enExample)
KR (1) KR102515110B1 (enExample)
CN (1) CN111902905B (enExample)
TW (1) TWI773875B (enExample)
WO (1) WO2019147097A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230055555A (ko) 2021-10-19 2023-04-26 주식회사 원어스 게이트형 에어 샤워장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075188A2 (en) * 2000-03-30 2001-10-11 Tokyo Electron Limited Method of and apparatus for gas injection
JP4906822B2 (ja) 2008-09-19 2012-03-28 三菱電機株式会社 薄膜形成装置および薄膜形成方法
JP2010103455A (ja) 2008-09-26 2010-05-06 Mitsubishi Electric Corp プラズマ処理装置
KR101598332B1 (ko) 2009-07-15 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 챔버의 유동 제어 피쳐
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
CN104380435B (zh) * 2012-05-29 2018-04-06 周星工程股份有限公司 基板加工装置及基板加工方法
US20130337657A1 (en) * 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
KR102061749B1 (ko) * 2012-12-27 2020-01-02 주식회사 무한 기판 처리 장치
KR101690971B1 (ko) * 2013-01-18 2016-12-29 주성엔지니어링(주) 기판 처리 장치
JP2015015382A (ja) 2013-07-05 2015-01-22 株式会社島津製作所 成膜装置及び成膜方法
JP5764228B1 (ja) * 2014-03-18 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
WO2016148139A1 (ja) * 2015-03-19 2016-09-22 シャープ株式会社 クリーニング方法、半導体装置の製造方法、プラズマ処理装置
JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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