JP7254097B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP7254097B2 JP7254097B2 JP2020562063A JP2020562063A JP7254097B2 JP 7254097 B2 JP7254097 B2 JP 7254097B2 JP 2020562063 A JP2020562063 A JP 2020562063A JP 2020562063 A JP2020562063 A JP 2020562063A JP 7254097 B2 JP7254097 B2 JP 7254097B2
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- electrode
- plasma
- vertical direction
- substrate processing
- electrode portion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Removal Of Insulation Or Armoring From Wires Or Cables (AREA)
Description
Claims (4)
- 基板を支持するための支持部;
前記支持部の上側に配置された第1電極部;
前記第1電極部の上側に配置された第2電極部;
前記第1電極部を貫通するように形成された生成孔;および
前記生成孔に対応する位置で前記第2電極部から下方に突出するように前記第2電極部に結合した突出電極を含み、
前記突出電極が、上下方向を基準に前記第1電極部に比べてより短い長さに形成され、
前記第1電極部が、前記上下方向を基準としてL(Lは0よりも大きい実数)の長さで形成され、
前記上下方向を基準に、前記突出電極の全体の長さから前記第1電極部と前記第2電極部との間隔を減算した長さは、0.5Lであり、
前記突出電極は、前記支持部を向くように最下端に配置された対向面を含み、前記対向面は、前記第1電極部の内側に配置されるように前記生成孔に挿入され、
前記第1電極部は、電源を供給するプラズマ電源に接続し、
前記第2電極部及び前記突出電極は接地(Ground)して、前記上下方向を基準として前記対向面と前記生成孔の下端との間にプラズマ生成空間を形成することを特徴とする基板処理装置。 - 前記突出電極が、前記支持部を向くように最下端に配置された対向面を含み、
前記対向面は、前記上下方向を基準に前記第1電極部の上面から0.5Lの距離で離隔した位置に配置されたことを特徴とする請求項1に記載の基板処理装置。 - 前記突出電極が、前記生成孔にプロセスガスを噴射するための噴射孔を含むことを特徴とする請求項1に記載の基板処理装置。
- 前記突出電極が、前記上下方向に対して垂直な水平方向を基準に、前記生成孔に比べて、より小さな直径で形成されたことを特徴とする請求項1に記載の基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180010814A KR102515110B1 (ko) | 2018-01-29 | 2018-01-29 | 기판처리장치 |
KR10-2018-0010814 | 2018-01-29 | ||
PCT/KR2019/001196 WO2019147097A1 (ko) | 2018-01-29 | 2019-01-29 | 기판처리장치 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021512477A JP2021512477A (ja) | 2021-05-13 |
JP2021512477A5 JP2021512477A5 (ja) | 2022-01-11 |
JP7254097B2 true JP7254097B2 (ja) | 2023-04-07 |
Family
ID=67395493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020562063A Active JP7254097B2 (ja) | 2018-01-29 | 2019-01-29 | 基板処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11551913B2 (ja) |
JP (1) | JP7254097B2 (ja) |
KR (1) | KR102515110B1 (ja) |
CN (1) | CN111902905A (ja) |
TW (1) | TWI773875B (ja) |
WO (1) | WO2019147097A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20230055555A (ko) | 2021-10-19 | 2023-04-26 | 주식회사 원어스 | 게이트형 에어 샤워장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010073970A (ja) | 2008-09-19 | 2010-04-02 | Mitsubishi Electric Corp | 薄膜形成装置および薄膜形成方法 |
JP2010103455A (ja) | 2008-09-26 | 2010-05-06 | Mitsubishi Electric Corp | プラズマ処理装置 |
US20150303037A1 (en) | 2012-12-27 | 2015-10-22 | Moohan Co., Ltd. | Substrate Processing Apparatus |
JP2017216340A (ja) | 2016-05-31 | 2017-12-07 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001075188A2 (en) * | 2000-03-30 | 2001-10-11 | Tokyo Electron Limited | Method of and apparatus for gas injection |
US8894767B2 (en) * | 2009-07-15 | 2014-11-25 | Applied Materials, Inc. | Flow control features of CVD chambers |
CN103250470A (zh) * | 2010-12-09 | 2013-08-14 | 韩国科学技术院 | 等离子体发生器 |
JP5848140B2 (ja) * | 2012-01-20 | 2016-01-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN104380435B (zh) * | 2012-05-29 | 2018-04-06 | 周星工程股份有限公司 | 基板加工装置及基板加工方法 |
US20130337657A1 (en) * | 2012-06-19 | 2013-12-19 | Plasmasi, Inc. | Apparatus and method for forming thin protective and optical layers on substrates |
KR101690971B1 (ko) * | 2013-01-18 | 2016-12-29 | 주성엔지니어링(주) | 기판 처리 장치 |
JP2015015382A (ja) * | 2013-07-05 | 2015-01-22 | 株式会社島津製作所 | 成膜装置及び成膜方法 |
JP5764228B1 (ja) * | 2014-03-18 | 2015-08-12 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
WO2016148139A1 (ja) * | 2015-03-19 | 2016-09-22 | シャープ株式会社 | クリーニング方法、半導体装置の製造方法、プラズマ処理装置 |
-
2018
- 2018-01-29 KR KR1020180010814A patent/KR102515110B1/ko active IP Right Grant
-
2019
- 2019-01-29 CN CN201980021363.4A patent/CN111902905A/zh active Pending
- 2019-01-29 JP JP2020562063A patent/JP7254097B2/ja active Active
- 2019-01-29 WO PCT/KR2019/001196 patent/WO2019147097A1/ko active Application Filing
- 2019-01-29 US US16/965,995 patent/US11551913B2/en active Active
- 2019-01-29 TW TW108103280A patent/TWI773875B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010073970A (ja) | 2008-09-19 | 2010-04-02 | Mitsubishi Electric Corp | 薄膜形成装置および薄膜形成方法 |
JP2010103455A (ja) | 2008-09-26 | 2010-05-06 | Mitsubishi Electric Corp | プラズマ処理装置 |
US20150303037A1 (en) | 2012-12-27 | 2015-10-22 | Moohan Co., Ltd. | Substrate Processing Apparatus |
JP2017216340A (ja) | 2016-05-31 | 2017-12-07 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
Non-Patent Citations (1)
Title |
---|
L.Sansonnes et al,A gas flow uniformity study in large-area showerhead reactors for R F plasma deposition,Plasma Sources Science and Technology,英国,IOP Science,2005年05月,Vol. 9, No. 2,pp. 205-209 |
Also Published As
Publication number | Publication date |
---|---|
TWI773875B (zh) | 2022-08-11 |
KR102515110B1 (ko) | 2023-03-28 |
WO2019147097A1 (ko) | 2019-08-01 |
TW201933541A (zh) | 2019-08-16 |
KR20190091805A (ko) | 2019-08-07 |
US20200357613A1 (en) | 2020-11-12 |
US11551913B2 (en) | 2023-01-10 |
CN111902905A (zh) | 2020-11-06 |
JP2021512477A (ja) | 2021-05-13 |
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