JP7254097B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
JP7254097B2
JP7254097B2 JP2020562063A JP2020562063A JP7254097B2 JP 7254097 B2 JP7254097 B2 JP 7254097B2 JP 2020562063 A JP2020562063 A JP 2020562063A JP 2020562063 A JP2020562063 A JP 2020562063A JP 7254097 B2 JP7254097 B2 JP 7254097B2
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Prior art keywords
electrode
plasma
vertical direction
substrate processing
electrode portion
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JP2020562063A
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Japanese (ja)
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JP2021512477A (ja
JP2021512477A5 (enExample
Inventor
ウゥン キョ オォ
ヒュン ホ クゥ
クァン ス ヨォ
サン ドゥ リ
キュ ジュン チョ
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ジュスン エンジニアリング カンパニー リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Removal Of Insulation Or Armoring From Wires Or Cables (AREA)
  • Drying Of Semiconductors (AREA)
JP2020562063A 2018-01-29 2019-01-29 基板処理装置 Active JP7254097B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020180010814A KR102515110B1 (ko) 2018-01-29 2018-01-29 기판처리장치
KR10-2018-0010814 2018-01-29
PCT/KR2019/001196 WO2019147097A1 (ko) 2018-01-29 2019-01-29 기판처리장치

Publications (3)

Publication Number Publication Date
JP2021512477A JP2021512477A (ja) 2021-05-13
JP2021512477A5 JP2021512477A5 (enExample) 2022-01-11
JP7254097B2 true JP7254097B2 (ja) 2023-04-07

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ID=67395493

Family Applications (1)

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JP2020562063A Active JP7254097B2 (ja) 2018-01-29 2019-01-29 基板処理装置

Country Status (6)

Country Link
US (1) US11551913B2 (enExample)
JP (1) JP7254097B2 (enExample)
KR (1) KR102515110B1 (enExample)
CN (1) CN111902905B (enExample)
TW (1) TWI773875B (enExample)
WO (1) WO2019147097A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230055555A (ko) 2021-10-19 2023-04-26 주식회사 원어스 게이트형 에어 샤워장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010073970A (ja) 2008-09-19 2010-04-02 Mitsubishi Electric Corp 薄膜形成装置および薄膜形成方法
JP2010103455A (ja) 2008-09-26 2010-05-06 Mitsubishi Electric Corp プラズマ処理装置
US20150303037A1 (en) 2012-12-27 2015-10-22 Moohan Co., Ltd. Substrate Processing Apparatus
JP2017216340A (ja) 2016-05-31 2017-12-07 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075188A2 (en) * 2000-03-30 2001-10-11 Tokyo Electron Limited Method of and apparatus for gas injection
KR101598332B1 (ko) 2009-07-15 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 챔버의 유동 제어 피쳐
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
CN104380435B (zh) * 2012-05-29 2018-04-06 周星工程股份有限公司 基板加工装置及基板加工方法
US20130337657A1 (en) * 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
KR101690971B1 (ko) * 2013-01-18 2016-12-29 주성엔지니어링(주) 기판 처리 장치
JP2015015382A (ja) 2013-07-05 2015-01-22 株式会社島津製作所 成膜装置及び成膜方法
JP5764228B1 (ja) * 2014-03-18 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
WO2016148139A1 (ja) * 2015-03-19 2016-09-22 シャープ株式会社 クリーニング方法、半導体装置の製造方法、プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010073970A (ja) 2008-09-19 2010-04-02 Mitsubishi Electric Corp 薄膜形成装置および薄膜形成方法
JP2010103455A (ja) 2008-09-26 2010-05-06 Mitsubishi Electric Corp プラズマ処理装置
US20150303037A1 (en) 2012-12-27 2015-10-22 Moohan Co., Ltd. Substrate Processing Apparatus
JP2017216340A (ja) 2016-05-31 2017-12-07 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
L.Sansonnes et al，A gas flow uniformity study in large-area showerhead reactors for R F plasma deposition，Plasma Sources Science and Technology，英国，IOP Science，2005年05月，Vol. 9, No. 2，pp. 205-209

Also Published As

Publication number Publication date
CN111902905A (zh) 2020-11-06
TW201933541A (zh) 2019-08-16
JP2021512477A (ja) 2021-05-13
WO2019147097A1 (ko) 2019-08-01
KR102515110B9 (ko) 2024-12-20
KR20190091805A (ko) 2019-08-07
US20200357613A1 (en) 2020-11-12
US11551913B2 (en) 2023-01-10
CN111902905B (zh) 2024-06-28
KR102515110B1 (ko) 2023-03-28
TWI773875B (zh) 2022-08-11

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