CN111902905B - 基板处理设备 - Google Patents

基板处理设备 Download PDF

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Publication number
CN111902905B
CN111902905B CN201980021363.4A CN201980021363A CN111902905B CN 111902905 B CN111902905 B CN 111902905B CN 201980021363 A CN201980021363 A CN 201980021363A CN 111902905 B CN111902905 B CN 111902905B
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CN
China
Prior art keywords
electrode unit
electrode
plasma
vertical direction
protruding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980021363.4A
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English (en)
Chinese (zh)
Other versions
CN111902905A (zh
Inventor
吴雄教
具泫淏
刘光洙
李相斗
曺圭正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jusung Engineering Co Ltd
Original Assignee
Jusung Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Engineering Co Ltd filed Critical Jusung Engineering Co Ltd
Publication of CN111902905A publication Critical patent/CN111902905A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Removal Of Insulation Or Armoring From Wires Or Cables (AREA)
  • Drying Of Semiconductors (AREA)
CN201980021363.4A 2018-01-29 2019-01-29 基板处理设备 Active CN111902905B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020180010814A KR102515110B1 (ko) 2018-01-29 2018-01-29 기판처리장치
KR10-2018-0010814 2018-01-29
PCT/KR2019/001196 WO2019147097A1 (ko) 2018-01-29 2019-01-29 기판처리장치

Publications (2)

Publication Number Publication Date
CN111902905A CN111902905A (zh) 2020-11-06
CN111902905B true CN111902905B (zh) 2024-06-28

Family

ID=67395493

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980021363.4A Active CN111902905B (zh) 2018-01-29 2019-01-29 基板处理设备

Country Status (6)

Country Link
US (1) US11551913B2 (enExample)
JP (1) JP7254097B2 (enExample)
KR (1) KR102515110B1 (enExample)
CN (1) CN111902905B (enExample)
TW (1) TWI773875B (enExample)
WO (1) WO2019147097A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230055555A (ko) 2021-10-19 2023-04-26 주식회사 원어스 게이트형 에어 샤워장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075188A2 (en) * 2000-03-30 2001-10-11 Tokyo Electron Limited Method of and apparatus for gas injection
JP4906822B2 (ja) 2008-09-19 2012-03-28 三菱電機株式会社 薄膜形成装置および薄膜形成方法
JP2010103455A (ja) 2008-09-26 2010-05-06 Mitsubishi Electric Corp プラズマ処理装置
KR101598332B1 (ko) 2009-07-15 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 챔버의 유동 제어 피쳐
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
CN104380435B (zh) * 2012-05-29 2018-04-06 周星工程股份有限公司 基板加工装置及基板加工方法
US20130337657A1 (en) * 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
KR102061749B1 (ko) * 2012-12-27 2020-01-02 주식회사 무한 기판 처리 장치
KR101690971B1 (ko) * 2013-01-18 2016-12-29 주성엔지니어링(주) 기판 처리 장치
JP2015015382A (ja) 2013-07-05 2015-01-22 株式会社島津製作所 成膜装置及び成膜方法
JP5764228B1 (ja) * 2014-03-18 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
WO2016148139A1 (ja) * 2015-03-19 2016-09-22 シャープ株式会社 クリーニング方法、半導体装置の製造方法、プラズマ処理装置
JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
CN111902905A (zh) 2020-11-06
TW201933541A (zh) 2019-08-16
JP2021512477A (ja) 2021-05-13
WO2019147097A1 (ko) 2019-08-01
JP7254097B2 (ja) 2023-04-07
KR102515110B9 (ko) 2024-12-20
KR20190091805A (ko) 2019-08-07
US20200357613A1 (en) 2020-11-12
US11551913B2 (en) 2023-01-10
KR102515110B1 (ko) 2023-03-28
TWI773875B (zh) 2022-08-11

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