TWI773875B - 用於處理基板的設備 - Google Patents

用於處理基板的設備 Download PDF

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Publication number
TWI773875B
TWI773875B TW108103280A TW108103280A TWI773875B TW I773875 B TWI773875 B TW I773875B TW 108103280 A TW108103280 A TW 108103280A TW 108103280 A TW108103280 A TW 108103280A TW I773875 B TWI773875 B TW I773875B
Authority
TW
Taiwan
Prior art keywords
electrode unit
electrode
plasma
vertical direction
protruding
Prior art date
Application number
TW108103280A
Other languages
English (en)
Chinese (zh)
Other versions
TW201933541A (zh
Inventor
吳雄敎
具泫淏
劉光洙
李相斗
曺圭正
Original Assignee
南韓商周星工程股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 南韓商周星工程股份有限公司 filed Critical 南韓商周星工程股份有限公司
Publication of TW201933541A publication Critical patent/TW201933541A/zh
Application granted granted Critical
Publication of TWI773875B publication Critical patent/TWI773875B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Removal Of Insulation Or Armoring From Wires Or Cables (AREA)
  • Drying Of Semiconductors (AREA)
TW108103280A 2018-01-29 2019-01-29 用於處理基板的設備 TWI773875B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??10-2018-0010814 2018-01-29
KR1020180010814A KR102515110B1 (ko) 2018-01-29 2018-01-29 기판처리장치
KR10-2018-0010814 2018-01-29

Publications (2)

Publication Number Publication Date
TW201933541A TW201933541A (zh) 2019-08-16
TWI773875B true TWI773875B (zh) 2022-08-11

Family

ID=67395493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108103280A TWI773875B (zh) 2018-01-29 2019-01-29 用於處理基板的設備

Country Status (6)

Country Link
US (1) US11551913B2 (enExample)
JP (1) JP7254097B2 (enExample)
KR (1) KR102515110B1 (enExample)
CN (1) CN111902905B (enExample)
TW (1) TWI773875B (enExample)
WO (1) WO2019147097A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230055555A (ko) 2021-10-19 2023-04-26 주식회사 원어스 게이트형 에어 샤워장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030019580A1 (en) * 2000-03-30 2003-01-30 Strang Eric J. Method of and apparatus for tunable gas injection in a plasma processing system
JP2010103455A (ja) * 2008-09-26 2010-05-06 Mitsubishi Electric Corp プラズマ処理装置
US20170345617A1 (en) * 2016-05-31 2017-11-30 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4906822B2 (ja) 2008-09-19 2012-03-28 三菱電機株式会社 薄膜形成装置および薄膜形成方法
KR101598332B1 (ko) 2009-07-15 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 챔버의 유동 제어 피쳐
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
CN104380435B (zh) * 2012-05-29 2018-04-06 周星工程股份有限公司 基板加工装置及基板加工方法
US20130337657A1 (en) * 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
KR102061749B1 (ko) * 2012-12-27 2020-01-02 주식회사 무한 기판 처리 장치
KR101690971B1 (ko) * 2013-01-18 2016-12-29 주성엔지니어링(주) 기판 처리 장치
JP2015015382A (ja) 2013-07-05 2015-01-22 株式会社島津製作所 成膜装置及び成膜方法
JP5764228B1 (ja) * 2014-03-18 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
WO2016148139A1 (ja) * 2015-03-19 2016-09-22 シャープ株式会社 クリーニング方法、半導体装置の製造方法、プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030019580A1 (en) * 2000-03-30 2003-01-30 Strang Eric J. Method of and apparatus for tunable gas injection in a plasma processing system
JP2010103455A (ja) * 2008-09-26 2010-05-06 Mitsubishi Electric Corp プラズマ処理装置
US20170345617A1 (en) * 2016-05-31 2017-11-30 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus

Also Published As

Publication number Publication date
CN111902905A (zh) 2020-11-06
TW201933541A (zh) 2019-08-16
JP2021512477A (ja) 2021-05-13
WO2019147097A1 (ko) 2019-08-01
JP7254097B2 (ja) 2023-04-07
KR102515110B9 (ko) 2024-12-20
KR20190091805A (ko) 2019-08-07
US20200357613A1 (en) 2020-11-12
US11551913B2 (en) 2023-01-10
CN111902905B (zh) 2024-06-28
KR102515110B1 (ko) 2023-03-28

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