JP2018527749A - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 296
- 238000003672 processing method Methods 0.000 title claims description 40
- 238000009826 distribution Methods 0.000 claims abstract description 419
- 239000007789 gas Substances 0.000 description 621
- 238000000034 method Methods 0.000 description 40
- 239000010409 thin film Substances 0.000 description 29
- 238000005192 partition Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 16
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- 239000004065 semiconductor Substances 0.000 description 6
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- 238000003908 quality control method Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- -1 etc.) Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
Claims (13)
- 処理チャンバ、
複数の基板を支持する形で、前記処理チャンバに設置され、特定の方向に回転する基板支持部、
前記基板支持部に対向する形で設けられた、前記処理チャンバの上面を被覆するチャンバ蓋、及び
異なる第1ガス及び第2ガスを空間的に離反させ、複数の基板に、該空間的に離反した第1ガス及び第2ガスを分配し得る、前記チャンバ蓋に設置されたガス分配ユニットから構成された基板処理装置であり、
前記基板支持部は、
回転自在に設けられた第1ディスク、及び
第1ディスクの回転に伴い、自転すると共に該第1ディスクの中心の周りを回転しうる、該第1ディスクに配置された少なくとも1枚の第2ディスクから構成され、該少なくとも1枚の第2ディスク上には、複数の基板が配置され、
前記第1ディスクの回転速度は、前記第2ディスクの回転速度とは異なることを特徴とする、基板処理装置。 - 前記第1ディスクの回転速度と前記第2ディスクの回転速度の比は、1:0.1以上、又は、1:1未満であることを特徴とする、請求項1記載の基板処理装置。
- 前記ガス分配ユニットは、
前記供給された第1ガスを、複数の接地電極部材間に設けられたガス分配空間に分配し得る、前記チャンバ蓋に設置された第1ガス分配モジュール、
前記処理蓋に設置され、前記1ガス分配モジュールから離反した第2ガス分配モジュールから構成され、該2ガス分配モジュールは、供給された第2ガスを、複数の接地電極部材間に設けられたガス分配空間に分配しうることを特徴とする、請求項1記載の基板処理装置。
- 前記第1及び第2ガス分配モジュールの少なくも1つは、前記ガス分配空間にプラズマを発生し得る、複数の接地電極部材間に配置されたプラズマ電極部材であることを特徴とする、請求項3記載の基板処理装置。
- 処理チャンバ、
複数の基板を支持し、前記処理チャンバに設置され、特定の方向に回転する、基板支持部、
前記基板支持部に対向する形で設けられた、前記処理チャンバの上面を被覆するチャンバ蓋、及び
基板支持部上の第1ガス分配領域と重なるように前記チャンバ蓋に設置された第1ガス分配モジュール及び、第1ガス分配領域とは空間的に離反した第2ガス分配領域と重なるように前記チャンバ蓋に設置された第2ガス分配モジュールからなるガス分配ユニットから構成される基板処理装置であり、該第1ガス分配モジュールは、第1ガスを該第1ガス分配領域に分配し、該第2ガス分配モジュールは、第2ガスを該第2ガス分配領域に分配し、
前記基板支持部は、
回転自在に設けられた第1ディスク、及び
第1ディスクの回転に伴い、自転すると共に該第1ディスクの中心の周りを回転しうる、該第1ディスク上に配置された少なくとも1枚の第2ディスクから構成され、該少なくとも1枚の第2ディスク上には、複数の基板が配置され、
前記第2ガス分配モジュールは前記第2ガスをプラズマ化して、複数の接地電極部材と交互に配置したプラズマ電極部材に供給されたプラズマ電力に従って、該プラズマ化した第2ガスを分配することを特徴とする、基板処理装置。 - 第1ガス分配モジュールは、供給された第1ガスを、複数の接地電極部材間にそのままの分配し、或いは、該第1ガスをプラズマ化し、プラズマ化した第1ガスを、複数の接地電極部材と交互に配置したプラズマ電極部材に供給したプラズマ電流に従って分配することを特徴とする、請求項5記載の基板処理装置。
- 前記第1及び第2ガス分配モジュールのそれぞれは複数設けられており、該複数の第2ガス分配モジュールのそれぞれは、該複数の第1ガス分配モジュールと交互に設けられていること特徴とする、請求項6記載の基板処理装置。
- 前記ガス分配ユニットは、更に、前記チャンバ蓋に設置され、前記第1及び第2ガス分配モジュール間に設けられた、第3及び第4ガス分配モジュールから構成されることで、第3ガスを複数の基板に分配すること特徴とする、請求項1又は請求項5記載の基板処理装置。
- 処理チャンバ、
複数の基板を支持し、前記処理チャンバに設置され、特定の方向に回転する、基板支持部、
前記基板支持部に対向する形で設けられた、前記処理チャンバの上面を被覆するチャンバ蓋、及び
前記チャンバ蓋に一定の間隔で配置された複数のガス分配モジュールを有するガス分配ユニットから構成される基板処理装置であって、該複数のガス分配モジュールのそれぞれは、複数の接地電極部材間に設けられたガス分配空間を有し、
前記複数のガス分配モジュールの少なくとも1つは、複数の接地電極部材と交互に配置されたプラズマ電極部材に供給されたプラズマ電極に従い、ガス分配空間にプラズマを発生させ、
前記基板支持部は、
回転自在に設けられた第1ディスク、及び
第1ディスクの回転に伴い、自転すると共に該第1ディスクの中心の周りを回転しうるように、前記第1ディスク上に設けられた少なくとも1枚の第2ディスクから構成され、該複数の基板は少なくとも1枚の第2ディスク上に配置されること特徴とする、基板処理装置。 - (A)複数の基板を、処理チャンバ内に設置された基板支持部上に、一定の間隔で配置し、
(B)複数の基板が配置された基板支持部を回転させて、第1ディスクの回転に伴い、第2ディスクが自転すると共に該第2ディスクを該第1ディスクの中心軸の周りを回転させ、
(C)異なる第1ガス及び第2ガスを空間的に離反させ、該空間的に離反した第1ガス及び第2ガスを、基板支持部に対向する形で設けられた処理チャンバの上面を被覆するチャンバ蓋内に、一定の間隔で配置された第1及び第2ガス分配モジュールを用いて複数の基板上に分配し、
ステップ(C)において、
第1ガス分配モジュールは、複数の接地電極部材間のガス分配空間に供給した第1ガスを、複数の基板に分配し、
第2ガス分配モジュールは、複数の接地電極部材間のガス分配空間に供給した第2ガスを、該第1ガスとは空間的に離反する形で設けられた、複数の基板に分配することを特徴とする、基板処理方法。 - 前記第1ディスクの回転速度の、前記第2ディスクの回転速度に対する比は、1:0.1以上、又は、1:1未満であることを特徴とする、請求項10記載の基板処理方法。
- 前記ステップ(C)において、前記第1ガス分配モジュールを介して第1ガスを分配する、第1ガス分配工程と、前記第2ガス分配モジュールを介して第2ガスを分配する、第2ガス分配工程を同時に、又は連続して実行することを特徴とする、請求項11記載の基板処理方法。
- 前記第1ガスを、前記第1ガス分配モジュールのガス分配空間に発生したプラズマにより、プラズマ化した第1ガスに変化させ、該プラズマ化した第1ガスを複数の基板に分配することを特徴とする、請求項10記載の基板処理方法。
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